-
公开(公告)号：US20070117242A1
公开(公告)日：2007-05-24
申请号：US10486666
申请日：2002-08-12
申请人： Michael Haji-Sheikh , James Biard , James Guenter , Bobby Hawkins
发明人： Michael Haji-Sheikh , James Biard , James Guenter , Bobby Hawkins
CPC分类号： G01R31/275 , G01R31/2831 , G01R31/2863 , G01R31/2872 , G01R31/2874 , G01R31/2884 , H01S5/0021 , H01S5/005 , H01S5/423
摘要： Disclosed are methods for providing wafer photonic flow control to a semiconductor wafer (1700) having a substrate (1720), at least one active layer (1765) and at least one surface layer (1710). Photonic flow control can be achieved through the formation of trenches (1725) and/or insulating implants (1730) formed in said wafer (1700), whereby active regions (1760) are defined by trenches (1725) that operate as nonconductive areas (1750). Methods of and systems for wafer level burn-in (WLBI) of semiconductor devices are also disclosed. Photonic flow control at the wafer level is important when using WLBI methods and systems.
摘要翻译： 公开了用于向具有衬底（1720），至少一个有源层（1765）和至少一个表面层（1710）的半导体晶片（1700）提供晶片光子流控制的方法。 可以通过形成在所述晶片（1700）中形成的沟槽（1725）和/或绝缘植入物（1730）来实现光子流控制，由此有源区域（1760）由作为非导电区域（1750）的沟槽（1725）限定 ）。 还公开了半导体器件的晶片级老化（WLBI）的方法和系统。 使用WLBI方法和系统时，晶圆级的光子流量控制很重要。
-
公开(公告)号：US20060097337A1
公开(公告)日：2006-05-11
申请号：US10486661
申请日：2002-08-12
IPC分类号： H01L31/06
CPC分类号： G01R31/2874 , H01S5/0021 , H01S5/02461 , H01S5/183
摘要： Methods of conducting wafer level burn-in (WLBI) of semiconductor devices are presented wherein systems are provided having at least two electrodes (210, 215). Electrical bias (920) and/or thermal power (925) is applied on each side of a wafer (100) having back and front electrical contacts for semiconductor devices borne by the wafer. A pliable conductive layer (910) is described for supplying pins on the device side of a wafer with electrical contact and/or also for providing protection to the wafer from mechanical pressure being applied to its surfaces. Use of a cooling system (950) is also described for enabling the application of a uniform temperature to a wafer undergoing burn-in. Wafer level burn-in is performed by applying electrical and physical contact (915) using an upper contact plate to individual contacts for the semiconductor devices; applying electrical and physical contact using a lower contact plate (910) to a substrate surface of said semiconductor wafer; providing electrical power (920) to said semiconductor devices through said upper and lower second contact plates from a power source coupled to said upper and lower contacts plates; monitoring and controlling electrical power (935) to said semiconductor devices for a period in accordance with a specified burn-in criteria; removing electrical power at completion of said period (955); and removing electrical and physical contact to said semiconductor wafer (965).
摘要翻译： 提供了进行半导体器件的晶片级老化（WLBI）的方法，其中提供具有至少两个电极（210,215）的系统。 电晶体（920）和/或热功率（925）施加在具有由晶片承载的半导体器件的背面和前部电触头的晶片（100）的每一侧上。 描述了一种柔性导电层（910），用于在具有电接触的晶片的器件侧上提供引脚和/或用于为施加到其表面的机械压力提供对晶片的保护。 还描述了使用冷却系统（950），以使得能够对经历老化的晶片施加均匀的温度。 通过使用上接触板向半导体器件的单个触点施加电和物理接触（915）来执行晶片级老化; 使用下接触板（910）将电和物理接触施加到所述半导体晶片的衬底表面; 通过所述上和下第二接触板从耦合到所述上和下接触板的电源向所述半导体器件提供电力（920）; 根据指定的老化标准对所述半导体器件监控和控制电力（935）一段时间; 在所述期间完成时移除电力（955）; 以及去除与所述半导体晶片（965）的电和物理接触。
-
公开(公告)号：US20050024076A1
公开(公告)日：2005-02-03
申请号：US10486672
申请日：2002-08-12
CPC分类号： G01R31/275 , G01R31/2831 , G01R31/2863 , G01R31/2872 , G01R31/2874 , G01R31/2884 , H01S5/0021 , H01S5/005 , H01S5/423
摘要： Systems for wafer level burn-in (WLBI) of semiconductor devices (210, 215) are presented. Systems having at least two electrodes for the application of electrical bias and/or thermal power on each side of a wafer (100) having back (105) and front (110) electrical contacts for semiconductor devices borne by the wafer (100) is described. Methods of wafer level burnin using the system are also described. Furthermore, a pliable conductive layer (220) is described for supplying pins or contacts (110) on device side of a wafer with electrical contact. The pliable conductive layer (220) can allow for an effective series R in each of the devices borne by the wafer (100), thus helping keep voltage bias level consistent. The pliable conductive layer can also prevent damage to a wafer when pressure is applied to it by chamber contacts (210, 215) and pressure onto surfaces of the wafer (100) during burn-in operations. A cooling system (660) is also described for enabling the application of a uniform temperature to the wafer (100) undergoing burn-in.
摘要翻译： 提出了用于半导体器件（210,215）的晶片级老化（WLBI）的系统。 描述具有至少两个电极的系统，用于在具有由晶片（100）承载的半导体器件的背面（105）和前（110）电触点的晶片（100）的每一侧上施加电偏压和/或热功率。 。 还描述了使用该系统的晶片级烧伤的方法。 此外，描述了一种柔性导电层（220），用于在具有电接触的晶片的器件侧上提供引脚或触点（110）。 柔性导电层（220）可以允许由晶片（100）承载的每个器件中的有效串联R，从而有助于保持电压偏置电平一致。 柔性导电层还可以防止在老化操作期间通过室接触（210,215）向其施加压力和施加到晶片（100）的表面上的压力时损坏晶片。 还描述了一种冷却系统（660），用于使得能够对经历老化的晶片（100）施加均匀的温度。
-
公开(公告)号：US08132457B2
公开(公告)日：2012-03-13
申请号：US12228225
申请日：2008-08-11
IPC分类号： G01N19/00
CPC分类号： C25D11/20 , C25D11/08 , G01N27/227 , G01N33/02
摘要： A nano-sensor including a substrate including pores formed thereon and a detecting mechanism for detecting changes in capacitance due to the presence of a substance. A method of measuring humidity by sampling air with the nano-sensor, detecting changes in capacitance, and determining the relative humidity of air. A method of detecting the presence of a substance by taking a sample with the nano-sensor, detecting changes in capacitance, and determining the presence of a substance. A method of making the nano-sensor by forming nano-pores on a substrate, and forming, on the surface of the substrate, a detecting mechanism for detecting changes in capacitance due to the presence of a substance.
摘要翻译： 包括其上形成有孔的基板的纳米传感器和用于检测由于物质的存在引起的电容变化的检测机构。 通过采用纳米传感器取样空气测量湿度的方法，检测电容的变化以及确定空气的相对湿度。 通过用纳米传感器取样，检测电容的变化和确定物质的存在来检测物质的存在的方法。 一种通过在衬底上形成纳米孔而制造纳米传感器的方法，并且在衬底的表面上形成用于检测由于物质的存在引起的电容变化的检测机构。
-
公开(公告)号：US20100031745A1
公开(公告)日：2010-02-11
申请号：US12228225
申请日：2008-08-11
CPC分类号： C25D11/20 , C25D11/08 , G01N27/227 , G01N33/02
摘要： A nano-sensor including a substrate including pores formed thereon and a detecting mechanism for detecting changes in capacitance due to the presence of a substance. A method of measuring humidity by sampling air with the nano-sensor, detecting changes in capacitance, and determining the relative humidity of air. A method of detecting the presence of a substance by taking a sample with the nano-sensor, detecting changes in capacitance, and determining the presence of a substance. A method of making the nano-sensor by forming nano-pores on a substrate, and forming, on the surface of the substrate, a detecting mechanism for detecting changes in capacitance due to the presence of a substance.
摘要翻译： 包括其上形成有孔的基板的纳米传感器和用于检测由于物质的存在引起的电容变化的检测机构。 通过采用纳米传感器取样空气测量湿度的方法，检测电容的变化以及确定空气的相对湿度。 通过用纳米传感器取样，检测电容的变化和确定物质的存在来检测物质的存在的方法。 一种通过在衬底上形成纳米孔而制造纳米传感器的方法，并且在衬底的表面上形成用于检测由于物质的存在引起的电容变化的检测机构。
-
-
-
-
搜索结果
5 条记录 (耗时 0.017 秒)