摘要:
A focused laser beam having an optical axis passes through a first lens mounted to a first galvanometer and a second lens mounted to a second galvanometer. The first galvanometer is adapted to tilt the first lens about a X axis and the second galvanometer is adapted to tilt the second lens about a Y axis. This displaces the focused laser beam in a controlled manner from the optical axis to enable laser machining of very precise geometric features over a large processing window. In a preferred embodiment, the first and second lenses are a pair of inverted positive meniscus lenses, of high index of refraction material.
摘要:
A focused laser beam having an optical axis passes sequentially through a simple, positive lens, a pair of plane, parallel windows, and a second, simple, negative lens. Each of the plane, parallel windows are mounted to a galvanometer motor and positioned orthogonally to one another. The focused laser beam is therefore displaced in a controlled manner from the optical axis to enable laser machining of very precise geometric features over a large processing window. A field size of one thousand microns is achieved.
摘要:
A focused laser beam having an optical axis passes through a first lens mounted to a first galvanometer and a second lens mounted to a second galvanometer. The first galvanometer is adapted to tilt the first lens about a X axis and the second galvanometer is adapted to tilt the second lens about a Y axis. This displaces the focused laser beam in a controlled manner from the optical axis to enable laser machining of very precise geometric features over a large processing window. In a preferred embodiment, the first and second lenses are a pair of inverted positive meniscus lenses, of high index of refraction material.
摘要:
A focused laser beam having an optical axis passes sequentially through a simple, positive lens, a pair of plane, parallel windows, and a second, simple, negative lens. Each of the plane, parallel windows are mounted to a galvanometer motor and positioned orthogonally to one another. The focused laser beam is therefore displaced in a controlled manner from the optical axis to enable laser machining of very precise geometric features over a large processing window. A field size of one thousand microns is achieved.
摘要:
A focused laser beam having an optical axis passes through a first lens mounted to a first galvanometer and a second lens mounted to a second galvanometer. The first galvanometer is adapted to tilt the first lens about a X axis and the second galvanometer is adapted to tilt the second lens about a Y axis. This displaces the focused laser beam in a controlled manner from the optical axis to enable laser machining of very precise geometric features over a large processing window. In a preferred embodiment, the first and second lenses are a pair of inverted positive meniscus lenses, of high index of refraction material.
摘要:
An apparatus that enables real time measurement of the spatial profile, circularity, centroid, astigmatism and M2 values of a laser beam generated by a high power laser beam. The apparatus employs the optics used in a process application, including a focus lens and cover glass. An attenuation module includes a pair of high reflecting mirror plates disposed in parallel, spaced apart relation to one another at a common angle of incidence to the laser beam. A beam dump is positioned out of a path of travel of the laser beam and in receiving relation to light reflected by the first and second mirrors. A camera detects spots of light that pass through the first and second mirrors. A high power attenuator formed by a highly reflective mirror pair is positioned between the source and the attenuation module. A second embodiment includes a single mirror plate having highly reflective surfaces.
摘要:
A method of homogenizing light includes the steps of providing a plurality of large diameter lenses selected from a group of lenses consisting of positive or negative spherical, positive or negative cylindrical lenses and positive or negative axicons, selecting a predetermined number of lenses from the group of lenses, segmenting each selected lens in a manner common to all selected lenses, selecting from each lens a predetermined number of lens segments, and arranging the selected lens segments in a predetermined array so that the light passing through each lens segment, when arranged in the predetermined array, recombines at a common plane.
摘要:
A method of homogenizing light includes the steps of providing a plurality of large diameter lenses selected from a group of lenses consisting of positive or negative spherical, positive or negative cylindrical lenses and positive or negative axicons, selecting a predetermined number of lenses from the group of lenses, segmenting each selected lens in a manner common to all selected lenses, selecting from each lens a predetermined number of lens segments, and arranging the selected lens segments in a predetermined array so that the light passing through each lens segment, when arranged in the predetermined array, recombines at a common plane.
摘要:
An apparatus that enables real time measurement of the spatial profile, circularity, centroid, astigmatism and M2 values of a laser beam generated by a high power laser beam. The apparatus employs the optics used in a process application, including a focus lens and cover glass. An attenuation module includes a pair of high reflecting mirror plates disposed in parallel, spaced apart relation to one another at a common angle of incidence to the laser beam. A beam dump is positioned out of a path of travel of the laser beam and in receiving relation to light reflected by the first and second mirrors. A camera detects spots of light that pass through the first and second mirrors. A high power attenuator formed by a highly reflective mirror pair is positioned between the source and the attenuation module. A second embodiment includes a single mirror plate having highly reflective surfaces.
摘要:
A failure analysis system and method for multi-layer semiconductor devices, including a molecular fluorine laser system for producing a 157 nm beam and an imaging system for imaging the beam onto the semiconductor device. The laser beam etches away one or more top (passivation) layers to expose layers disposed underneath. Circuitry formed in exposed layers can then be tested.