Wafer Level Packaging of Materials with Different Coefficents of Thermal Expansion
    1.
    发明申请
    Wafer Level Packaging of Materials with Different Coefficents of Thermal Expansion 失效
    具有不同热膨胀系数的材料的晶圆级包装

    公开(公告)号:US20060263931A1

    公开(公告)日:2006-11-23

    申请号:US11461587

    申请日:2006-08-01

    IPC分类号: H01L21/00

    CPC分类号: H03H9/059

    摘要: An electromechanical device package includes a cap material permanently bonded to a device wafer encapsulating an electromechanical device. An intermediate material is used to bond the device and capping material together at a low temperature, and a structure including the intermediate material emanating from either the device or cap material, or both, provides an interlocking at the bonding interface. One package includes a reusable carrier wafer with a similar coefficient of thermal expansion as a mating material and a low cost cap wafer of different material than the device wafer. A method for temporarily bonding the cap material to the carrier wafer includes attaching the cap material to the carrier wafer and is then singulated to mitigate thermal expansion mismatch with the device wafer.

    摘要翻译: 机电装置封装包括永久地结合到封装机电装置的器件晶片的帽材料。 使用中间材料将装置和封盖材料在低温下结合在一起,并且包括从装置或盖材料或两者发出的中间材料的结构在接合界面处提供互锁。 一个包装包括具有与装置晶片不同材料的匹配材料和类似热膨胀系数的可重复使用的载体晶片和不同材料的低成本封盖晶片。 用于将盖材料临时粘合到载体晶片的方法包括将盖材料附接到载体晶片,然后将其分开以减轻与器件晶片的热膨胀失配。

    Wafer level packaging of materials with different coefficients of thermal expansion
    2.
    发明授权
    Wafer level packaging of materials with different coefficients of thermal expansion 失效
    晶圆级封装材料具有不同的热膨胀系数

    公开(公告)号:US07635636B2

    公开(公告)日:2009-12-22

    申请号:US11461587

    申请日:2006-08-01

    IPC分类号: H01L21/46 H01L21/30

    CPC分类号: H03H9/059

    摘要: An electro-mechanical device package includes a cap material permanently bonded to a device wafer encapsulating an electromechanical device. An intermediate material is used to bond the device and capping material together at a low temperature, and a structure including the intermediate material emanating from either the device or cap material, or both, provides an interlocking at the bonding interface. One package includes a reusable carrier wafer with a similar coefficient of thermal expansion as a mating material and a low cost cap wafer of different material than the device wafer. A method for temporarily bonding the cap material to the carrier wafer includes attaching the cap material to the carrier wafer and is then singulated to mitigate thermal expansion mismatch with the device wafer.

    摘要翻译: 机电装置封装包括永久地结合到封装机电装置的器件晶片的帽材料。 使用中间材料将装置和封盖材料在低温下结合在一起,并且包括从装置或盖材料或两者发出的中间材料的结构在接合界面处提供互锁。 一个包装包括具有与装置晶片不同材料的匹配材料和类似热膨胀系数的可重复使用的载体晶片和不同材料的低成本封盖晶片。 用于将盖材料临时粘合到载体晶片的方法包括将盖材料附接到载体晶片,然后将其分开以减轻与器件晶片的热膨胀失配。

    Wafer level packaging of materials with different coefficients of thermal expansion

    公开(公告)号:US07109635B1

    公开(公告)日:2006-09-19

    申请号:US10867172

    申请日:2004-06-14

    IPC分类号: H01L41/08

    CPC分类号: H03H9/059

    摘要: An electro-mechanical device package includes a cap material permanently bonded to a device wafer encapsulating an electromechanical device. An intermediate material is used to bond the device and capping material together at a low temperature, and a structure including the intermediate material emanating from either the device or cap material, or both, provides an interlocking at the bonding interface. One package includes a reusable carrier wafer with a similar coefficient of thermal expansion as a mating material and a low cost cap wafer of different material than the device wafer. A method for temporarily bonding the cap material to the carrier wafer includes attaching the cap material to the carrier wafer and is then singulated to mitigate thermal expansion mismatch with the device wafer.

    Wafer-level surface acoustic wave filter package with temperature-compensating characteristics
    5.
    发明授权
    Wafer-level surface acoustic wave filter package with temperature-compensating characteristics 有权
    晶圆级声表面波滤波器封装具有温度补偿特性

    公开(公告)号:US07230512B1

    公开(公告)日:2007-06-12

    申请号:US10921479

    申请日:2004-08-19

    IPC分类号: H03H9/00 H03H9/10

    摘要: A SAW filter is fabricated at a wafer level for providing desirable temperature characteristics. The filter includes a piezoelectric substrate bonded to a carrier substrate, wherein the coefficient of thermal expansion of the carrier substrate is less than the coefficient of thermal expansion of the piezoelectric substrate. Interdigital transducers are formed on the piezoelectric substrate so as to form a SAW composite die structure. A cap substrate having a coefficient of thermal expansion similar to that of the carrier substrate is bonded to the SAW composite die structure for enclosing the interdigital transducers. Plated vias form signal pad interconnects to input and output pads of the interdigital transducer and a sealing pad formed on the surface of the piezoelectric substrate bonds the SAW composite die structure to the cap substrate.

    摘要翻译: 在晶片级制造SAW滤波器以提供期望的温度特性。 滤波器包括接合到载体基板的压电基板,其中载体基板的热膨胀系数小于压电基板的热膨胀系数。 在压电基板上形成叉指式换能器,以形成SAW复合模具结构。 具有类似于载体基板的热膨胀系数的盖基板被结合到用于包围叉指式换能器的SAW复合模具结构。 电镀通孔形成信号焊盘互连到交叉指型传感器的输入和输出焊盘,并且形成在压电基板的表面上的密封垫将SAW复合模具结构粘合到盖基板。