公开(公告)号：US06828809B1

公开(公告)日：2004-12-07

申请号：US10324324

申请日：2002-12-20

申请人： Michael R. Bruce ,  Robert Powell ,  Brennan Davis ,  Rama Goruganthu ,  Thomas Chu ,  Miguel Santana, Jr.

发明人： Michael R. Bruce ,  Robert Powell ,  Brennan Davis ,  Rama Goruganthu ,  Thomas Chu ,  Miguel Santana, Jr.

IPC分类号： G01R31302

CPC分类号： G01R31/308

摘要： Various methods of hot-electron imaging a workpiece are provided. In one aspect, a method of examining a workpiece is provided that includes directing a first photon at a photodetector at a first known time and stimulating a circuit device of the workpiece at a second known time to produce a condition in the circuit device conducive to photon emission. At least one photon emitted by the circuit device in response to the stimulation is detected. The first photon increases the quantum efficiency of the photodetector in detecting the at least one photon. The detection of the at least one photon relative to the first known time and the second known time is time correlated to temporally distinguish the first photon and the at least one photon and to temporally correlate the stimulation of the circuit device to the detection of the at least one photon.

摘要翻译： 提供了对工件进行热电子成像的各种方法。 在一个方面，提供了一种检查工件的方法，其包括在第一已知时间引导光电检测器处的​​第一光子并在第二已知时间刺激工件的电路装置，以产生有利于光子的电路器件中的状态 排放。 检测由电路装置响应于刺激而发射的至少一个光子。 在检测至少一个光子时，第一光子增加了光电检测器的量子效率。 相对于第一已知时间和第二已知时间的至少一个光子的检测是时间相关的，以便在时间上区分第一光子和至少一个光子，并且将电路装置的刺激与at 至少一个光子。

公开(公告)号：US06433572B1

公开(公告)日：2002-08-13

申请号：US09378848

申请日：1999-08-23

申请人： Jeffrey D. Birdsley ,  Michael R. Bruce ,  Rama R. Goruganthu ,  Brennan Davis ,  Rosalinda M. Ring

发明人： Jeffrey D. Birdsley ,  Michael R. Bruce ,  Rama R. Goruganthu ,  Brennan Davis ,  Rosalinda M. Ring

IPC分类号： G01R3128

CPC分类号： G01R31/311

摘要： A system and method for analyzing an integrated circuit device involves generating a magnetic field in circuitry forming a power grid within the integrated circuit device. The magnetic field generator is switched off, and the charge on the power grid dissipates through internal device structures to ground. This decay of the charged power grid is detected and evaluated to assess the quality or consistency of the power distribution grid. Faulty power grids will have a decay pattern that differs from high quality power grids.

摘要翻译： 用于分析集成电路器件的系统和方法涉及在形成集成电路器件内的电网的电路中产生磁场。 磁场发生器关闭，电网上的电荷通过内部器件结构耗散到地。 检测并评估充电电网的这种衰减，以评估配电网的质量或一致性。 电网故障将具有与高品质电网不同的衰减模式。

公开(公告)号：US06428718B1

公开(公告)日：2002-08-06

申请号：US09383670

申请日：1999-08-26

申请人： Jeffrey Birdsley ,  Brennan Davis

发明人： Jeffrey Birdsley ,  Brennan Davis

IPC分类号： H01L21302

CPC分类号： G01N1/32 ,  G01N2033/0095

摘要： According to an example embodiment, a semiconductor device having a back side and a circuit side opposite the back side is analyzed. The semiconductor device includes bulk silicon in the back side and also includes epitaxial silicon. A wet etch solution comprising aqueous tetramethylammonium hydroxide (TMAHW) is directed at the back side. Using the wet etch solution, the back side is selectively etched and an exposed region is formed. The etching is selective to the bulk silicon. When the etching process encounters the epitaxial silicon, the etch rate slows and is used as an endpoint indicator of the selective etching process. Once the etching process is stopped, the circuitry is accessed via the exposed region.

摘要翻译： 根据示例性实施例，分析了具有背侧和与背面相反的电路侧的半导体器件。 半导体器件包括背面的体硅，并且还包括外延硅。 包含四甲基氢氧化铵（TMAHW）的湿蚀刻溶液指向背面。 使用湿蚀刻溶液，选择性地蚀刻背面并形成曝光区域。 蚀刻对体硅有选择性。 当蚀刻工艺遇到外延硅时，蚀刻速率减慢并被用作选择性蚀刻工艺的端点指示器。 一旦蚀刻过程停止，电路就通过暴露的区域被访问。

公开(公告)号：US06897664B1

公开(公告)日：2005-05-24

申请号：US10261390

申请日：2002-09-30

申请人： Michael Bruce ,  Gregory A. Dabney ,  Palaniappan Muthupalaniappan ,  Jiann Min Chin ,  Richard Jacob Wilcox ,  Glen Gilfeather ,  Brennan Davis ,  Jacob Phang ,  Choon Meng Chua ,  Lian Ser Koh ,  Hoo-Yin Ng ,  Soon Huat Tan

发明人： Michael Bruce ,  Gregory A. Dabney ,  Palaniappan Muthupalaniappan ,  Jiann Min Chin ,  Richard Jacob Wilcox ,  Glen Gilfeather ,  Brennan Davis ,  Jacob Phang ,  Choon Meng Chua ,  Lian Ser Koh ,  Hoo-Yin Ng ,  Soon Huat Tan

IPC分类号： G01R31/305 ,  G01R31/311

CPC分类号： G01R31/311

摘要： Apparatus for and methods of inspection using laser beam induced alteration are provided. In one aspect, an apparatus is provided that includes a laser scanning microscope for directing a laser beam at a circuit structure and a source for biasing and thereby establishing a power condition in the circuit structure. A detection circuit is provided for detecting a change in the power condition in response to illumination of the circuit structure by the laser beam and generating a first output signal based on the detected change. A signal processor is provided for processing the first output signal and generating a second output signal based thereon. A control system is operable to scan the laser beam according to a pattern that has a plurality of pixel locations, whereby the laser beam may be moved to a given pixel location and allowed to dwell there for a selected time before being moved to another pixel location.

摘要翻译： 提供了使用激光束诱发改变的装置和检查方法。 在一个方面，提供了一种装置，其包括用于将电路结构的激光束引导的激光扫描显微镜和用于偏置的源，从而在电路结构中建立功率状态。 提供一种检测电路，用于响应于激光束对电路结构的照明而检测功率状态的变化，并且基于检测到的变化产生第一输出信号。 提供信号处理器用于处理第一输出信号并基于此产生第二输出信号。 控制系统可操作以根据具有多个像素位置的图案来扫描激光束，由此激光束可以移动到给定的像素位置，并允许其在移动到另一像素位置之前在选定的时间停留 。