Liquid crystal display with internal polarizer and method of making same
    1.
    发明授权
    Liquid crystal display with internal polarizer and method of making same 有权
    具有内部偏振片的液晶显示器及其制造方法

    公开(公告)号:US06417899B1

    公开(公告)日:2002-07-09

    申请号:US09386308

    申请日:1999-08-31

    IPC分类号: G02F11335

    摘要: A liquid crystal display includes at least one polarizer located interior or internally of substrates-of the display. In certain embodiments, the polarizer may be spin-coated onto the interior of one of the substrates, preferably the passive substrate of the display. Such a polarizer may also be located interior of color filters on the copassive substrate. Thus, light being transmitted through the display proceeds through the front polarizer prior to being de-polarized by the color filters. The result is improved contrast ratios in the display due to the minimization of the de-polarizing of color filters. In certain embodiments, the internal polarizer(s) may be photo-patternable by way of ultraviolet photo-imaging.

    摘要翻译: 液晶显示器包括位于显示器的内部或内部的至少一个偏振器。 在某些实施例中,偏振器可以旋涂在显示器的一个基板的内部,优选地是被动基板。 这种偏振器也可以位于相对基底上的滤色器的内部。 因此,通过显示器传输的光在被滤色器去偏振之前通过前偏振器进行。 结果是由于滤色器的去偏振最小化,显示器中的对比度提高了。 在某些实施例中,内部偏振器可以通过紫外光成像来进行光图案化。

    Method of making a TFT array with photo-imageable insulating layer over address lines
    4.
    发明授权
    Method of making a TFT array with photo-imageable insulating layer over address lines 失效
    通过地址线制造具有可光刻绝缘层的TFT阵列的方法

    公开(公告)号:US08198110B2

    公开(公告)日:2012-06-12

    申请号:US12285780

    申请日:2008-10-14

    IPC分类号: H01L21/00

    摘要: This invention is related to a thin film transistor (TFT) array and method of making same, for use in an active matrix liquid crystal display (AMLCD) having a high pixel aperture ratio. The TFT array and corresponding display are made by forming the TFTs and corresponding address lines on a substrate, coating the address lines and TFTs with a photo-imageable insulating layer which acts as a negative resist, exposing portions of the insulating layer with UV light which are to remain on the substrate, removing non-exposed areas of the insulating layer so as to form contact vias, and depositing pixel electrodes on the substrate over the insulating layer so that the pixel electrodes contact respective TFT source electrodes through the contact vias. The resulting display has an increased pixel aperture ratio because the pixel electrodes are formed over the insulating layer so as to overlap portions of the array address lines.

    摘要翻译: 本发明涉及薄膜晶体管(TFT)阵列及其制造方法,用于具有高像素孔径比的有源矩阵液晶显示器(AMLCD)。 通过在基板上形成TFT和相应的地址线,形成TFT阵列和相应的显示器,用作为负光刻胶的可光致抗蚀剂的绝缘层涂覆地址线和TFT,用紫外光曝光绝缘层的部分 保留在基板上,去除绝缘层的未曝光区域,以便形成接触孔,并且在绝缘层上的衬底上沉积像素电极,使得像素电极通过接触通孔接触相应的TFT源电极。 所得到的显示器具有增加的像素孔径比,因为像素电极形成在绝缘层上,以便与阵列地址线的部分重叠。

    Method of making a TFT array with photo-imageable insulating layer over address lines
    5.
    发明授权
    Method of making a TFT array with photo-imageable insulating layer over address lines 失效
    通过地址线制造具有可光刻绝缘层的TFT阵列的方法

    公开(公告)号:US06372534B1

    公开(公告)日:2002-04-16

    申请号:US08630984

    申请日:1996-04-12

    IPC分类号: H01L2100

    摘要: This invention is related to a thin film transistor (TFT) array and method of making same, for use in an active matrix liquid crystal display (AMLCD) having a high pixel aperture ratio. The TFT array and corresponding display are made by forming the TFTs and corresponding address lines on a substrate, coating the address lines and TFTs with a photo-imageable insulating layer which acts as a negative resist, exposing portions of the insulating layer with UV light which are to remain on the substrate, removing non-exposed areas of the insulating layer so as to form contact vias, and depositing pixel electrodes on the substrate over the insulating layer so that the pixel electrodes contact respective TFT source electrodes through the contact vias. The resulting display has an increased pixel aperture ratio because the pixel electrodes are formed over the insulating layer so as to overlap portions of the array address lines.

    摘要翻译: 本发明涉及薄膜晶体管(TFT)阵列及其制造方法,用于具有高像素孔径比的有源矩阵液晶显示器(AMLCD)。 通过在基板上形成TFT和相应的地址线,形成TFT阵列和相应的显示器,用作为负光刻胶的可光致抗蚀剂的绝缘层涂覆地址线和TFT,用紫外光曝光绝缘层的部分 保留在基板上,去除绝缘层的未曝光区域,以便形成接触孔,并且在绝缘层上的衬底上沉积像素电极,使得像素电极通过接触通孔接触相应的TFT源电极。 所得到的显示器具有增加的像素孔径比,因为像素电极形成在绝缘层上,以便与阵列地址线的部分重叠。

    High aperture LCD with insulating color filters overlapping bus lines on active substrate
    7.
    发明授权
    High aperture LCD with insulating color filters overlapping bus lines on active substrate 失效
    具有绝缘彩色滤光片的高光圈LCD与有源基板上的总线重叠

    公开(公告)号:US08253890B2

    公开(公告)日:2012-08-28

    申请号:US11542159

    申请日:2006-10-04

    IPC分类号: G02F1/1335

    摘要: A high aperture active matrix liquid crystal display (AMLCD) includes pixel electrodes in respective pixels which overlap adjacent address lines. The color filters are formed on the active substrate in a manner such that the filters also overlap the address lines and function as an insulating layer between the pixel electrodes and address lines in the areas of overlap. Accordingly, line-pixel capacitances are reduced and the resulting AMLCD is easier to manufacture. The total number of process step in manufacturing is reduced, and plate-to-plate (active to passive plate) alignment is much easier and less important.

    摘要翻译: 高孔径有源矩阵液晶显示器(AMLCD)包括与相邻地址线重叠的各像素中的像素电极。 滤色器以有效的方式形成在有源基板上,使得滤光片也与地址线重叠,并且在重叠区域中的像素电极和地址线之间用作绝缘层。 因此,线像素电容减少,并且所得到的AMLCD更容易制造。 制造过程中的步骤总数减少,板对板(主动到被动板)对准要容易得多,不太重要。

    Method and apparatus for color correction of color devices for various operating conditions
    8.
    发明授权
    Method and apparatus for color correction of color devices for various operating conditions 有权
    用于各种操作条件的彩色装置的颜色校正的方法和装置

    公开(公告)号:US07969478B1

    公开(公告)日:2011-06-28

    申请号:US10419001

    申请日:2003-04-18

    IPC分类号: H04N9/73

    摘要: Methods and apparatuses for color correction of color device for various operating conditions. In at least one embodiment of the present invention, operating under a current condition, a color correction operation that is derived from color correction operations defined for other conditions is performed on the color data. In another embodiment, a device profile for managing colors for a color device operating under one condition is interpolated from the device profiles for the color device operating under other conditions (e.g., based on the input received from a user interface according to the perception of the user or based on the measurement of a sensor). The interpolation can be based on the input received from a user interface according to the perception of the user or it can be based on the measurement of a sensor or a set of sensors. Various operating conditions for a color device (e.g., a scanner, a camera, a video camera, a printer, a display device such as a CRT monitor or an LCD display panel, a television set, or others) include chromaticity and illumination of ambient light, background color for a display device, characteristics of print media for a printer, humidity, temperature, pressure and ink level for an ink jet printer, the age of a light source for a scanner, and others.

    摘要翻译: 用于各种操作条件的彩色装置的颜色校正的方法和装置。 在本发明的至少一个实施例中,在当前条件下操作,对颜色数据执行从为其他条件定义的颜色校正操作导出的颜色校正操作。 在另一个实施例中,用于管理在一个条件下操作的彩色设备的颜色的设备配置文件从用于在其他条件下操作的颜色设备的设备配置文件(例如,基于根据用户界面的感知从用户界面接收的输入) 用户或基于传感器的测量)。 内插可以基于根据用户感知从用户界面接收的输入,或者可以基于传感器或一组传感器的测量。 用于彩色设备(例如,扫描仪,照相机,摄像机,打印机,CRT显示器或LCD显示面板,电视机等的显示设备)的各种操作条件包括色度和环境照度 用于显示设备的光,背景颜色,用于打印机的打印介质的特性,用于喷墨打印机的湿度,温度,压力和墨水水平,扫描仪的光源的时代等。

    Method of making a TFT array with photo-imageable insulating layer over address lines
    9.
    发明授权
    Method of making a TFT array with photo-imageable insulating layer over address lines 失效
    通过地址线制造具有可光刻绝缘层的TFT阵列的方法

    公开(公告)号:US07445948B2

    公开(公告)日:2008-11-04

    申请号:US10052772

    申请日:2002-01-23

    IPC分类号: H01L21/00

    摘要: This invention is related to a thin film transistor (TFT) array and method of making same, for use in an active matrix liquid crystal display (AMLCD) having a high pixel aperture ratio. The TFT array and corresponding display are made by forming the TFTs and corresponding address lines on a substrate, coating the address lines and TFTs with a photo-imageable insulating layer which acts as a negative resist, exposing portions of the insulating layer with UV light which are to remain on the substrate, removing non-exposed areas of the insulating layer so as to form contact vias, and depositing pixel electrodes on the substrate over the insulating layer so that the pixel electrodes contact respective TFT source electrodes through the contact vias. The resulting display has an increased pixel aperture ratio because the pixel electrodes are formed over the insulating layer so as to overlap portions of the array address lines.

    摘要翻译: 本发明涉及薄膜晶体管(TFT)阵列及其制造方法,用于具有高像素孔径比的有源矩阵液晶显示器(AMLCD)。 通过在基板上形成TFT和相应的地址线,形成TFT阵列和相应的显示器,用作为负光刻胶的可光致抗蚀剂的绝缘层涂覆地址线和TFT,用紫外光曝光绝缘层的部分 保留在基板上,去除绝缘层的未曝光区域,以便形成接触孔,并且在绝缘层上的衬底上沉积像素电极,使得像素电极通过接触通孔接触相应的TFT源电极。 所得到的显示器具有增加的像素孔径比,因为像素电极形成在绝缘层上,以便与阵列地址线的部分重叠。

    TFT array with photo-imageable insulating layer over address lines
    10.
    发明授权
    TFT array with photo-imageable insulating layer over address lines 有权
    TFT阵列,具有地址线上的可光刻绝缘层

    公开(公告)号:US06307215B1

    公开(公告)日:2001-10-23

    申请号:US09357889

    申请日:1999-07-21

    IPC分类号: H01L3120

    摘要: This invention is related to a thin film transistor (TFT) array and method of making same, for use in an active matrix liquid crystal display (AMLCD) having a high pixel aperture ratio. The TFT array and corresponding display are made by forming the TFTs and corresponding address lines on a substrate, coating the address lines and TFTs with a photo-imageable insulating layer which acts as a negative resist, exposing portions of the insulating layer with UV light which are to remain on the substrate, removing non-exposed areas of the insulating layer so as to form contact vias, and depositing pixel electrodes on the substrate over the insulating layer so that the pixel electrodes contact respective TFT source electrodes through the contact vias. The resulting display has an increased pixel aperture ratio because the pixel electrodes are formed over the insulating layer so as to overlap portions of the array address lines.

    摘要翻译: 本发明涉及薄膜晶体管(TFT)阵列及其制造方法,用于具有高像素孔径比的有源矩阵液晶显示器(AMLCD)。 通过在基板上形成TFT和相应的地址线,形成TFT阵列和相应的显示器,用作为负光刻胶的可光致抗蚀剂的绝缘层涂覆地址线和TFT,用紫外光曝光绝缘层的部分 保留在基板上,去除绝缘层的未曝光区域,以便形成接触孔,并且在绝缘层上的衬底上沉积像素电极,使得像素电极通过接触通孔接触相应的TFT源电极。 所得到的显示器具有增加的像素孔径比,因为像素电极形成在绝缘层上,以便与阵列地址线的部分重叠。