公开(公告)号：US4412336A

公开(公告)日：1983-10-25

申请号：US203380

申请日：1980-11-03

申请人： Michel Peltier ,  Maurice Gloanec ,  Gerard Nuzillat ,  Vincent Maurel ,  Michel Charrier

发明人： Michel Peltier ,  Maurice Gloanec ,  Gerard Nuzillat ,  Vincent Maurel ,  Michel Charrier

IPC分类号： H04L25/03 ,  H03K5/08 ,  H03K17/30 ,  H03K17/687 ,  H03K19/0952 ,  H04L25/24 ,  H04L25/52 ,  H04L25/66 ,  H03K5/153

CPC分类号： H04L25/247

摘要： Device for regenerating digital signals transmitted along a coaxial line.So as to transmit information at flow rates greater than or equal to 650 Mbauds, the storage comparator of the invention is constructed in the form of an integrated circuit on AsGa and with negative threshold voltage MESFET transistors. It comprises an adjustable threshold voltage comparator stage, a type-D flip-flop for storage and resynchronization with respect to an external clock, and an output matching stage which may provide summation at its output.

摘要翻译： 用于再生沿着同轴线传输的数字信号的装置。 为了以大于或等于650M波特的流速传输信息，本发明的存储比较器以AsGa上的集成电路和负阈值电压MESFET晶体管的形式构成。 它包括一个可调节的阈值电压比较器级，一个D型触发器，用于存储和重新同步相对于一个外部时钟;一个输出匹配级可以在其输出端提供求和。

公开(公告)号：US4975661A

公开(公告)日：1990-12-04

申请号：US228168

申请日：1988-08-04

申请人： Maurice Gloanec

发明人： Maurice Gloanec

IPC分类号： H01L47/02 ,  H03B9/12 ,  H03B19/14

CPC分类号： H03B19/14 ,  H01L47/02 ,  H03B9/12

摘要： A Gunn effect triode working as a programmable frequency dynamic divider or as a VCO oscillator is disclosed. The Gunn effect triode is made up of a layer of III-V material and has three metallizations, namely the anode metallization, the cathode metallization and the gate metallization. According to the invention, firstly, the layer has a non-uniform width between the anode and gate metallization which is either trapezoidal or bounded by two hyperbolas. Then, on the gate metallization DC bias voltage, V.sub.GK, or the anode metallization DC bias voltage, V.sub.AK, there is superimposed an alternating control voltage, V.sub.HF, which is a harmonic of the free oscillating frequency of the triode. The order of division is equal to the harmonic order. The output frequency is adjusted by vernier operation on the harmonic frequency.

摘要翻译： 公开了用作可编程频率动态分频器或VCO振荡器的Gunn效应三极管。 Gunn效应三极管由一层III-V材料组成，具有三个金属化，即阳极金属化，阴极金属化和栅极金属化。 根据本发明，首先，该层在阳极和栅极金属化之间具有不均匀的宽度，其为梯形或由两个双曲线限定。 然后，在栅极金属化直流偏置电压VGK或阳极金属化直流偏置电压VAK上叠加有交流控制电压VHF，它是三极管的自由振荡频率的谐波。 划分顺序等于谐波次序。 通过对谐波频率的游标操作来调节输出频率。

公开(公告)号：US4320313A

公开(公告)日：1982-03-16

申请号：US75537

申请日：1979-09-13

申请人： Maurice Gloanec ,  Rene Castagne

发明人： Maurice Gloanec ,  Rene Castagne

IPC分类号： H01L47/02 ,  H03K5/04 ,  H01L27/26

CPC分类号： H03K5/04 ,  H01L47/02

摘要： A Gunn-effect device originated from a Gunn-triode wherein electrodes are added between gate and anode for receiving high and low potentials representing states 1 and 0 of a binary code. In a normal Gunn-triode a very short pulse on the gate produces a dipole domain which is propagated to the anode within a time of the order of the nanosecond. In the present device, under each finger brought temporarily to a low potential, there is produced a space charge which induces a negative pulse in the anode current of the Gunn device upon the passage of a dipole domain under the finger. Consequently, a series of successive pulses corresponds to a combination of simultaneous binary states. A digital converter using this device is proposed for converting simultaneous binary signals into successive binary signals.

摘要翻译： 来自耿氏三极管的Gunn效应器件，其中在栅极和阳极之间添加电极，用于接收表示二进制代码的状态1和0的高电位和低电位。 在正常的耿氏三极管中，栅极上的非常短的脉冲产生偶极域，其在纳秒级的时间内传播到阳极。 在本装置中，每个手指在临时低电位下产生空间电荷，该空间电荷在偶极域在手指下通过时在耿氏装置的阳极电流中产生负脉冲。 因此，一系列连续脉冲对应于同时二进制状态的组合。 提出了一种使用该器件的数字转换器，用于将同时二进制信号转换为连续的二进制信号。

公开(公告)号：US4242597A

公开(公告)日：1980-12-30

申请号：US956976

申请日：1978-11-02

申请人： Maurice Gloanec

发明人： Maurice Gloanec

IPC分类号： G11C19/28 ,  H01L47/02 ,  H01L27/26

CPC分类号： H01L47/02

摘要： A device derived from a bulk semiconductor component called "Gunn-effect triode"; utilizing the propagation of travelling domains between gate and anode of said triode. Forming a register element with such a device consists of a "writing arm" with a semiconductor band of Ga As organized into a Gunn-effect triode and a "reading arm" which is a similar band of Ga As having two electrodes instead of three i.e. an anode and a cathode. The two bands are connected by a bridge of Ga As. The travelling domain triggered by a digital signal is propagated by a lateral extension across the bridge from the writing arm to the reading arm. An n-bit register is carried out by arranging a series of register elements in such a manner that the gate of the first band of the first element forms the input terminal of the register and the cathode of the second band of the first element is connected to the gate of the first band of the second element and so on up to the second band of the n.sup.th element that is the output terminal of the register.

摘要翻译： 衍生自称为“Gunn效应三极管”的体半导体元件的器件; 利用所述三极管的栅极和阳极之间的行进区的传播。 用这种器件形成寄存器元件包括一个“写入臂”，其中GaAs的半导体带被组织成一个Gunn效应三极管，和一个“读取臂”，它是GaAs具有两个电极而不是三个的类似带 阳极和阴极。 两条带由Ga As桥连接。 由数字信号触发的行进区域通过跨越桥的横向延伸从书写臂传播到阅读臂。 通过以这样的方式布置一系列寄存器元件来执行n位寄存器，使得第一元件的第一带的栅极形成寄存器的输入端，并且第一元件的第二带的阴极被连接 到第二元件的第一频带的栅极，并且依此类推直到作为寄存器的输出端的第n个元件的第二频带。

公开(公告)号：US4568843A

公开(公告)日：1986-02-04

申请号：US505175

申请日：1983-06-17

申请人： Maurice Gloanec ,  Georges Bert ,  Ernesto Perea

发明人： Maurice Gloanec ,  Georges Bert ,  Ernesto Perea

IPC分类号： H03K3/037 ,  H03K3/356 ,  H03K3/289 ,  H03K3/288

CPC分类号： H03K3/037 ,  H03K3/356069

摘要： A bistable logic device, of the RSTT type, operating up to X band. The bistable logic device is organized into three stages: an input stage of four NOR operators (21, 31, 41, 51), a second stage of two OR operators (61, 71) and an output stage of two OR operators (62, 72). Each NOR operator of the input stage drives in parallel an OR operator of the second stage and an OR operator of the output stage. Each of the four OR operators are fed back to an input of one of the four NOR operators of the input stage. The organization in logic NOR/OR form makes it possible to use faster single gate transistors. The present invention may be particularly useful to frequency dividers for interfacing between signals at GHz frequency and measurement and control circuits at MHz frequency.

摘要翻译： RST和upbar＆T类型的双稳态逻辑器件，可运行到X频段。 双稳态逻辑器件分为三个阶段：四个NOR运算符（21,31,41,51）的输入级，两个OR运算符（61,71）的第二级和两个OR运算符的输出级（62， 72）。 输入级的每个NOR运算符并行驱动第二级的OR运算符和输出级的OR运算符。 四个OR运算符中的每一个被反馈到输入级的四个NOR运算符之一的输入。 逻辑NOR / OR形式的组织使得可以使用更快的单栅极晶体管。 本发明对于用于在GHz频率的信号与MHz频率的测量和控制电路之间进行接口的分频器可能是特别有用的。

公开(公告)号：US5025212A

公开(公告)日：1991-06-18

申请号：US407589

申请日：1989-11-03

申请人： Maurice Gloanec ,  Jacques Jarry ,  Jean L. Lailler

发明人： Maurice Gloanec ,  Jacques Jarry ,  Jean L. Lailler

IPC分类号： G01R1/18 ,  G01R27/28

CPC分类号： G01R1/18 ,  G01R27/28

摘要： A circuit for measuring the dynamic characteristics of encapsulating packages for high-speed integrated circuits includes at least two amplifiers integrated on a semiconductor substrate. These amplifiers have the same input and output impedances as those of the high-speed circuit to be encapsulated within the package. The amplifiers are located in widely spaced relation in order to ensure that there is no internal coupling. Depending on the measurements to be performed, the two amplifiers are mounted in parallel or in antiparallel relation. In order to measure the dynamic characteristics of a package, a measuring circuit is mounted within a package and a signal (V.sub.e) is addressed to an input connection of the package. The transmission and coupling coefficients are deduced from measurement of the signal (V.sub.S) collected on an output connection.

公开(公告)号：US4901012A

公开(公告)日：1990-02-13

申请号：US122125

申请日：1987-11-18

申请人： Maurice Gloanec ,  Jacques Jarry ,  Jean L. Lailler

发明人： Maurice Gloanec ,  Jacques Jarry ,  Jean L. Lailler

IPC分类号： G01R1/18 ,  G01R27/28

CPC分类号： G01R1/18 ,  G01R27/28

摘要： A circuit for measuring the dynamic characteristics of encapsulating packages for high-speed integrated circuits includes at least two amplifiers integrated on a semiconductor substrate. These amplifiers have the same input and output impedances as those of the high-speed circuit to be encapsulated within the package. The amplifiers are located in widely spaced relation in order to ensure that there is no internal coupling. Depending on the measurements to be performed, the two amplifiers are mounted in parallel or in antiparallel relation. In order to measure the dynamic characteristics of a package, a measuring circuit is mounted within a package and a signal (V.sub.e) is addressed to an input connection of the package. The transmission and coupling coefficients are deduced from measurement of the signal (V.sub.S) collected on an output connection.

摘要翻译： 用于测量用于高速集成电路的封装封装的动态特性的电路包括集成在半导体衬底上的至少两个放大器。 这些放大器具有与要封装在封装内的高速电路相同的输入和输出阻抗。 放大器位于相互间隔很宽的位置，以确保没有内部耦合。 根据要执行的测量，两个放大器并联安装或反平行关系。 为了测量封装的动态特性，将测量电路安装在封装内，并将信号（Ve）写入封装的输入连接。 从输出连接上收集的信号（VS）的测量推导出传输和耦合系数。