公开(公告)号：US06534895B2

公开(公告)日：2003-03-18

申请号：US09842330

申请日：2001-04-24

申请人： Michio Kadota ,  Toshinori Miura

发明人： Michio Kadota ,  Toshinori Miura

IPC分类号： H03H925

CPC分类号： H03H9/02574 ,  H03H9/176

摘要： A surface acoustic wave device includes a substrate and electrode disposed on the substrate. The electrode has a specific resistance &rgr; of up to about 1 &OHgr;·cm and is made of a ZnO film with a low resistance having an impurity doping. A piezoelectric film having a specific resistance &rgr; of at least about 106 &OHgr;·cm and a lattice constant within approximately ±20% of that of ZnO is disposed on the electrode. An interdigital electrode is disposed on the piezoelectric film.

摘要翻译： 表面声波装置包括基板和设置在基板上的电极。 该电极的电阻rho高达约1欧米法，由具有杂质掺杂的低电阻的ZnO膜制成。 在电极上设置具有至少约为106欧姆·厘米汞厘米的电阻率rho和在约±20％范围内的晶格常数的压电薄膜。 交叉电极设置在压电膜上。

公开(公告)号：US06733895B2

公开(公告)日：2004-05-11

申请号：US10234137

申请日：2002-09-05

申请人： Michio Kadota ,  Toshinori Miura

发明人： Michio Kadota ,  Toshinori Miura

IPC分类号： B32B1504

CPC分类号： C30B23/02 ,  C30B29/16 ,  H01L21/0242 ,  H01L21/02554 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/02631 ,  H01L33/0083

摘要： A p-type ZnO film is formed on a sapphire substrate by RF magnetron sputtering in an atmosphere of a mixture of Ar and N2 gases, using a Zn metal target doped with Y2O3. The p-type ZnO film can be easily formed even on a large-sized substrate.

摘要翻译： 使用掺杂有Y 2 O 3的Zn金属靶，通过RF磁控溅射在Ar和N 2气体的混合气氛中，在蓝宝石衬底上形成p型ZnO膜。 即使在大尺寸基板上也能够容易地形成p型ZnO膜。

公开(公告)号：US08574369B2

公开(公告)日：2013-11-05

申请号：US12743275

申请日：2008-11-20

申请人： Toshinori Miura

发明人： Toshinori Miura

IPC分类号： C25F1/00

CPC分类号： H01L21/31138 ,  G03F7/42 ,  G03F7/423 ,  G03F7/427

摘要： A method for removing a resist on a substrate includes supplying unsaturated hydrocarbon gas or fluorine substitution product gas of unsaturated hydrocarbon, at a lower pressure than an atmospheric pressure, to a system of reaction capable of heating the substrate and supplying ozone gas at a lower pressure than the atmospheric pressure to the system of reaction. The ozone gas is an ultra-high concentration ozone gas obtained by separating only ozone from ozone-containing gas by a difference of vapor pressure through liquefaction separation and by vaporizing a liquefaction-separated ozone again. The substrate may be cleaned with pure water. A susceptor that holds the substrate is provided in a chamber of the system of reaction and is heated by a light source that emits infrared light. An internal pressure of the chamber is controlled so that a temperature of the substrate is 90° C. or less.

摘要翻译： 用于除去基板上的抗蚀剂的方法包括在比大气压低的压力下将不饱和烃的不饱和烃气体或氟取代产物气体提供给能够加热基底并以较低压力供应臭氧气体的反应系统 比大气压反应系统。 臭氧气体是通过液体分离通过蒸汽压差与通过再次蒸发液化分离的臭氧而仅将臭氧从含臭氧气体中分离而获得的超高浓度臭氧气体。 基材可以用纯水清洗。 保持基板的感受体设置在反应体系的室中，并由发射红外光的光源加热。 控制室的内部压力使得基板的温度为90℃以下。

公开(公告)号：US20100300482A1

公开(公告)日：2010-12-02

申请号：US12743275

申请日：2008-11-20

申请人： Toshinori Miura

发明人： Toshinori Miura

IPC分类号： H01L21/306

CPC分类号： H01L21/31138 ,  G03F7/42 ,  G03F7/423 ,  G03F7/427

摘要： A resist removal apparatus 1 can remove a resist on a substrate at a low temperature of 90° C. or less. That is, the resist removal apparatus 1 has a chamber 2 which holds a substrate 16 coated with a resist 17 that is going to be removed, and can heat the substrate 16, also into which unsaturated hydrocarbon gas or fluorine substitution product gas of unsaturated hydrocarbon together with ozone gas are supplied at a lower pressure than an atmospheric pressure. An internal pressure of the chamber 2 is controlled so that a temperature of the substrate 16 is 90° C. or less. As the ozone gas, ultra-high concentration ozone gas that is obtained by separating only ozone from ozone-containing gas by a difference of vapor pressure through liquefaction separation and by vaporizing the above ozone again, is given. It is preferable to supply ultrapure water to a treated substrate 16 for cleaning. The chamber 2 is provided with a susceptor 15 that holds the substrate 16. The susceptor 15 is heated by a light source 4 that emits infrared light.

摘要翻译： 抗蚀剂除去装置1可以在90℃以下的低温下除去基板上的抗蚀剂。 也就是说，抗蚀剂除去装置1具有容纳涂布有要除去的抗蚀剂17的基板16的室2，并且可以对不饱和烃气体或不饱和烃的氟取代产物气体进行加热 与臭氧气体一起供给的压力低于大气压。 控制室2的内部压力，使得基板16的温度为90℃以下。 作为臭氧气体，可以通过液体分离的蒸汽压差和再次蒸发上述臭氧而仅从含臭氧气体中分离臭氧而得到的超高浓度臭氧气体。 优选向被处理基板16供给超纯水进行清洗。 腔室2设置有保持基板16的基座15.基座15被发射红外光的光源4加热。

公开(公告)号：US4583017A

公开(公告)日：1986-04-15

申请号：US728823

申请日：1985-04-30

申请人： Takeshi Nakamura ,  Kenji Ando ,  Ikuo Matsumoto ,  Toshinori Miura

发明人： Takeshi Nakamura ,  Kenji Ando ,  Ikuo Matsumoto ,  Toshinori Miura

IPC分类号： H03H9/24 ,  H03H3/02 ,  H03H9/17 ,  H01L41/08

CPC分类号： H03H9/172

摘要： A piezoelectric vibrator operating in a spreading vibration mode has a vibrating plate of permanently elastic metal. At least one main surface of the vibrating plate is mirror-finished.

摘要翻译： 以扩展振动模式操作的压电振动器具有永久弹性金属的振动板。 振动板的至少一个主表面被镜面抛光。

公开(公告)号：US08187389B2

公开(公告)日：2012-05-29

申请号：US12598501

申请日：2008-05-08

申请人： Toshinori Miura

发明人： Toshinori Miura

IPC分类号： B08B3/04

CPC分类号： H01L21/31138 ,  G03F7/42 ,  G03F7/423 ,  Y10S134/902 ,  Y10S438/906

摘要： A resist removing device 1 functions to remove a resist from a substrate while preventing occurrence of popping phenomenon and at the same time attains reduction in cost of energy for the resist removing and has a simplified constitution. The resist removing device 1 is equipped with a chamber 2 for containing therein a substrate 16 (for example, a substrate having a high-doze ion implanted resist), and with a pressure below the atmospheric pressure, the chamber 2 is fed with ozone gas, unsaturated hydrocarbons and water vapor. The ozone gas may be an ultra-high concentrated ozone gas that is produced by subjecting an ozone containing gas to a liquefaction-separation with the aid of a vapor pressure difference and then vaporizing the liquefied ozone. For cleaning the substrate 16 thus treated, it is preferable to use ultra-pure water. The chamber 2 is equipped with a susceptor 15 for holding the substrate 16. The susceptor 15 is heated to a temperature of 100° C. or below. An example of the means of heating the susceptor is a light source that emits infra-red rays.

摘要翻译： 抗蚀剂去除装置1用于从基板除去抗蚀剂，同时防止出现爆裂现象，同时降低抗蚀剂去除能量的成本，并具有简化的结构。 抗蚀剂除去装置1配备有用于容纳基板16（例如，具有高掺铒离子注入抗蚀剂的基板）的室2，并且在低于大气压的压力下，向室2供给臭氧气体 ，不饱和烃和水蒸汽。 臭氧气体可以是超高浓缩臭氧气体，其通过使含臭氧的气体借助蒸气压差进行液化分离，然后使液化臭氧气化而制备。 为了清洗这样处理的基板16，优选使用超纯水。 室2配备有用于保持基板16的基座15.将基座15加热到100℃以下的温度。 加热感受器的方法的一个例子是发射红外线的光源。