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    High output power semiconductor laser diode
    4.
    发明授权
    High output power semiconductor laser diode 有权
    高输出功率半导体激光二极管

    公开(公告)号：US06711194B2

    公开(公告)日：2004-03-23

    申请号：US10072816

    申请日：2002-02-08

    申请人： Michio Ohkubo ,  Hitoshi Shimizu

    发明人： Michio Ohkubo ,  Hitoshi Shimizu

    IPC分类号： H01S500

    CPC分类号： B82Y20/00 ,  H01S5/22 ,  H01S5/2216 ,  H01S5/32366 ,  H01S5/34306

    摘要： A semiconductor laser diode has a GaAs substrate and a resonant cavity formed on the GaAs substrate. The resonant cavity includes a QW structure having a GaInAsN well layer and a AlGaAs or GaInAsP barrier layers. Specific combination of the indium content and the nitrogen content in the well layer alone or in combination with the specific composition of the barrier layers provides a long-term operation at a higher output power.

    摘要翻译： 半导体激光二极管具有在GaAs衬底上形成的GaAs衬底和谐振腔。 谐振腔包括具有GaInAsN阱层和AlGaAs或GaInAsP势垒层的QW结构。 独特的铟层含量和阱层中氮含量的特定组合或与阻挡层的具体组成相结合提供了在较高输出功率下的长期操作。

    Heterojunction bipolar transistor having a graded-composition base region
    5.
    发明授权
    Heterojunction bipolar transistor having a graded-composition base region 失效
    异质结双极晶体管具有梯度组成的基极区域

    公开(公告)号：US5814843A

    公开(公告)日：1998-09-29

    申请号：US566188

    申请日：1995-12-01

    申请人： Michio Ohkubo

    发明人： Michio Ohkubo

    IPC分类号： H01L29/73 ,  H01L21/331 ,  H01L29/10 ,  H01L29/205 ,  H01L29/737

    CPC分类号： H01L29/7371 ,  H01L29/1004

    摘要： A HBT comprises a collector layer, a base layer and an emitter layer overlying a semi-insulating GaAs substrate. The base layer is composed of graded-composition GaAs.sub.1-x P.sub.x wherein x is 0 at the interface between the base layer and the collector layer, linearly increases as viewed toward the emitter layer and is 0.15 at the interface between the base layer and the emitter layer. The graded-composition of GaAs base layer provides a high carbon dosage, a high current gain and a high cut-off frequency without rise in the offset voltage.

    摘要翻译： HBT包括集电极层，基极层和覆盖半绝缘GaAs衬底的发射极层。 基层由等离子体组成的GaAs1-xPx组成，其中在基极层和集电极层之间的界面处x为0，从发射极层观察时线性增加，并且在基极层和发射极层之间的界面处为0.15 。 GaAs基层的分级组成提供高碳剂量，高电流增益和高截止频率，而不会在失调电压上升。

    Fluorescent labeling reagent
    7.
    发明授权
    Fluorescent labeling reagent 失效
    荧光标记试剂

    公开(公告)号：US07842505B2

    公开(公告)日：2010-11-30

    申请号：US11678885

    申请日：2007-02-26

    申请人： Kunihiro Noda ,  Ryo Asakura ,  Daisuke Saito ,  Tetsuhiko Isobe ,  Tomohiro Takagi ,  Hideki Aizawa ,  Michio Ohkubo

    发明人： Kunihiro Noda ,  Ryo Asakura ,  Daisuke Saito ,  Tetsuhiko Isobe ,  Tomohiro Takagi ,  Hideki Aizawa ,  Michio Ohkubo

    IPC分类号： G01N37/00 ,  G01N33/533 ,  G01N33/543 ,  G01N33/551 ,  C01F17/00 ,  G01N33/553

    CPC分类号： G01N33/582 ,  B82Y15/00 ,  G01N33/585 ,  G01N33/588 ,  Y10T436/13

    摘要： A fluorescent labeling reagent of the present invention includes an inorganic fluorescent particle and a material (A) having a material (B) of biological origin adsorbed or bound thereto. The inorganic fluorescent particle is integrated with the material (A) so as to form the reagent of the present invention. The inorganic fluorescent particle used in the present invention is capable of emitting light with a wavelength of 650 nm to 1600 nm in the infrared region or the near-infrared region which can be detected by means of Si—CCD or InGaAs—PD and can penetrate an H2O rich sample when excited by light with a wavelength of 650 nm or longer which has the shortest transparent wavelength of AlInGaP-LD including oxygen adsorption type hemoglobin used for DVDs etc.

    摘要翻译： 本发明的荧光标记试剂包括无机荧光颗粒和具有吸附或结合生物学原料的材料（B）的材料（A）。 将无机荧光颗粒与材料（A）整合以形成本发明的试剂。 本发明中使用的无机荧光粒子能够通过Si-CCD或InGaAs-PD检测的红外区域或近红外区域发射波长为650nm〜1600nm的光，并能够穿透 当具有650nm或更长波长的光激发时，其具有包括用于DVD等的氧吸附型血红蛋白的AlInGaP-LD的最短透明波长的富H2O样品。

    Semiconductor laser diode
    10.
    发明授权
    Semiconductor laser diode 失效
    半导体激光二极管

    公开(公告)号：US06668001B2

    公开(公告)日：2003-12-23

    申请号：US09923879

    申请日：2001-08-06

    申请人： Michio Ohkubo

    发明人： Michio Ohkubo

    IPC分类号： H01S500

    CPC分类号： H01S5/16 ,  H01S5/1014 ,  H01S5/1064 ,  H01S5/168 ,  H01S5/22

    摘要： A semiconductor laser diode including: a resonator structure including a first facet having a reflection film and a second facet having an antireflection film; and an active region including a linear section a uniform width extending from the first facet along a direction of the resonator and a flared section extending from the linear section toward the second facet, the flared section having a tapered width increasing toward the second facet, wherein the relation of d

    摘要翻译： 一种半导体激光二极管，包括：谐振器结构，包括具有反射膜的第一面和具有抗反射膜的第二面; 以及有源区域，包括从所述第一小面沿所述谐振器的方向延伸的均匀宽度的直线部分和从所述线性部分朝向所述第二小面延伸的扩张部分，所述扩张部分具有朝向所述第二小面增加的锥形宽度，其中 d }的关系成立。 通过满足上述关于增加抑制空穴燃烧现象的效果的关系，可以实现以固定基模发射的半导体激光二极管。