Memory devices comprising word line structures, at least one select gate structure, and a plurality of doped regions
    1.
    发明授权
    Memory devices comprising word line structures, at least one select gate structure, and a plurality of doped regions 有权
    包括字线结构,至少一个选择栅结构和多个掺杂区的存储器件

    公开(公告)号:US08729621B2

    公开(公告)日:2014-05-20

    申请号:US14048151

    申请日:2013-10-08

    Abstract: Disclosed is a method of forming memory devices employing halogen ion implantation and diffusion processes. In one illustrative embodiment, the method includes forming a plurality of word line structures above a semiconducting substrate, each of the word line structures comprising a gate insulation layer, performing an LDD ion implantation process to form LDD doped regions in the substrate between the word line structures, performing a halogen ion implantation process to implant atoms of halogen into the semiconducting substrate between the word line structures, and performing at least one anneal process to cause at least some of the atoms of halogen to diffuse into the gate insulation layers on adjacent word line structures.

    Abstract translation: 公开了一种使用卤素离子注入和扩散工艺形成存储器件的方法。 在一个说明性实施例中,该方法包括在半导体衬底上形成多个字线结构,每个字线结构包括栅极绝缘层,执行LDD离子注入工艺,以在字线之间的衬底中形成LDD掺杂区域 结构,执行卤素离子注入工艺,以将卤素原子植入到半导体衬底中的字线结构之间,以及执行至少一个退火工艺以使至少一些卤素原子扩散到相邻字的栅极绝缘层中 线结构。

    Memory Devices Comprising Word Line Structures, At Least One Select Gate Structure, and a Plurality Of Doped Regions
    2.
    发明申请
    Memory Devices Comprising Word Line Structures, At Least One Select Gate Structure, and a Plurality Of Doped Regions 有权
    包含字线结构,至少一个选择门结构和多个掺杂区域的存储器件

    公开(公告)号:US20140035021A1

    公开(公告)日:2014-02-06

    申请号:US14048151

    申请日:2013-10-08

    Abstract: Disclosed is a method of forming memory devices employing halogen ion implantation and diffusion processes. In one illustrative embodiment, the method includes forming a plurality of word line structures above a semiconducting substrate, each of the word line structures comprising a gate insulation layer, performing an LDD ion implantation process to form LDD doped regions in the substrate between the word line structures, performing a halogen ion implantation process to implant atoms of halogen into the semiconducting substrate between the word line structures, and performing at least one anneal process to cause at least some of the atoms of halogen to diffuse into the gate insulation layers on adjacent word line structures.

    Abstract translation: 公开了一种使用卤素离子注入和扩散工艺形成存储器件的方法。 在一个说明性实施例中,该方法包括在半导体衬底上形成多个字线结构,每个字线结构包括栅极绝缘层,执行LDD离子注入工艺,以在字线之间的衬底中形成LDD掺杂区域 结构,执行卤素离子注入工艺,以将卤素原子植入到半导体衬底中的字线结构之间,以及执行至少一个退火工艺以使至少一些卤素原子扩散到相邻字的栅极绝缘层中 线结构。

    Memory devices and methods of forming memory devices
    3.
    发明授权
    Memory devices and methods of forming memory devices 有权
    存储器件和形成存储器件的方法

    公开(公告)号:US08580645B2

    公开(公告)日:2013-11-12

    申请号:US13786889

    申请日:2013-03-06

    Abstract: Disclosed is a method of forming memory devices employing halogen ion implantation and diffusion processes. In one illustrative embodiment, the method includes forming a plurality of word line structures above a semiconducting substrate, each of the word line structures comprising a gate insulation layer, performing an LDD ion implantation process to form LDD doped regions in the substrate between the word line structures, performing a halogen ion implantation process to implant atoms of halogen into the semiconducting substrate between the word line structures, and performing at least one anneal process to cause at least some of the atoms of halogen to diffuse into the gate insulation layers on adjacent word line structures.

    Abstract translation: 公开了一种使用卤素离子注入和扩散工艺形成存储器件的方法。 在一个说明性实施例中,该方法包括在半导体衬底上形成多个字线结构,每个字线结构包括栅极绝缘层,执行LDD离子注入工艺,以在字线之间的衬底中形成LDD掺杂区域 结构,执行卤素离子注入工艺,以将卤素原子植入到半导体衬底中的字线结构之间,以及执行至少一个退火工艺以使至少一些卤素原子扩散到相邻字的栅极绝缘层中 线结构。

    Memory Devices and Methods of Forming Memory Devices
    4.
    发明申请
    Memory Devices and Methods of Forming Memory Devices 有权
    内存设备和形成内存设备的方法

    公开(公告)号:US20130193505A1

    公开(公告)日:2013-08-01

    申请号:US13786889

    申请日:2013-03-06

    Abstract: Disclosed is a method of forming memory devices employing halogen ion implantation and diffusion processes. In one illustrative embodiment, the method includes forming a plurality of word line structures above a semiconducting substrate, each of the word line structures comprising a gate insulation layer, performing an LDD ion implantation process to form LDD doped regions in the substrate between the word line structures, performing a halogen ion implantation process to implant atoms of halogen into the semiconducting substrate between the word line structures, and performing at least one anneal process to cause at least some of the atoms of halogen to diffuse into the gate insulation layers on adjacent word line structures.

    Abstract translation: 公开了一种使用卤素离子注入和扩散工艺形成存储器件的方法。 在一个说明性实施例中,该方法包括在半导体衬底上形成多个字线结构,每个字线结构包括栅极绝缘层,执行LDD离子注入工艺,以在字线之间的衬底中形成LDD掺杂区域 结构,执行卤素离子注入工艺,以将卤素原子植入到半导体衬底中的字线结构之间,以及执行至少一个退火工艺以使至少一些卤素原子扩散到相邻字的栅极绝缘层中 线结构。

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