公开(公告)号：US11742282B2

公开(公告)日：2023-08-29

申请号：US16988422

申请日：2020-08-07

申请人： Micron Technology, Inc.

发明人： Jordan D. Greenlee ,  Rita J. Klein ,  Everett A. McTeer ,  John D. Hopkins ,  Shuangqiang Luo ,  Song Kai Tan ,  Jing Wai Fong ,  Anurag Jindal ,  Chieh Hsien Quek

IPC分类号： H01L23/522 ,  H01L21/768 ,  H10B43/27 ,  H01L23/532

CPC分类号： H01L23/5226 ,  H01L21/76843 ,  H01L21/76847 ,  H01L21/76877 ,  H10B43/27 ,  H01L23/53209 ,  H01L23/53266

摘要： Some embodiments include conductive interconnects which include the first and second conductive materials, and which extend upwardly from a conductive structure. Some embodiments include integrated assemblies having conductive interconnects.

公开(公告)号：US11967556B2

公开(公告)日：2024-04-23

申请号：US17452113

申请日：2021-10-25

申请人： Micron Technology, Inc.

发明人： Biow Hiem Ong ,  David A. Daycock ,  Chieh Hsien Quek ,  Chii Wean Calvin Chen ,  Christian George Emor ,  Wing Yu Lo

IPC分类号： H01L23/535 ,  H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H10B41/27 ,  H10B41/40 ,  H10B43/27

CPC分类号： H01L23/535 ,  H01L21/76805 ,  H01L21/76816 ,  H01L21/76843 ,  H01L21/76877 ,  H01L21/76895 ,  H01L23/5226 ,  H01L23/5283 ,  H01L23/53266 ,  H10B41/40 ,  H10B41/27 ,  H10B43/27

摘要： Methods for forming microelectronic devices include forming a staircase structure in a stack structure having a vertically alternating sequence of insulative and conductive materials arranged in tiers. Steps are at lateral ends of the tiers. Contact openings of different aspect ratios are formed in fill material adjacent the staircase structure, with some openings terminating in the fill material and others exposing portions of the conductive material of upper tiers of the stack structure. Additional conductive material is selectively formed on the exposed portions of the conductive material. The contact openings initially terminating in the fill material are extended to expose portions of the conductive material of lower elevations. Contacts are formed, with some extending to the additional conductive material and others extending to conductive material of the tiers of the lower elevations. Microelectronic devices and systems incorporating such staircase structures and contacts are also disclosed.

公开(公告)号：US20210242131A1

公开(公告)日：2021-08-05

申请号：US16778346

申请日：2020-01-31

申请人： Micron Technology, Inc.

发明人： Biow Hiem Ong ,  David A. Daycock ,  Chieh Hsien Quek ,  Chii Wean Calvin Chen ,  Christian George Emor ,  Wing Yu Lo

IPC分类号： H01L23/535 ,  H01L21/768 ,  H01L23/528 ,  H01L23/532 ,  H01L23/522 ,  H01L27/11582 ,  H01L27/11556

摘要： Methods for forming microelectronic devices include forming a staircase structure in a stack structure having a vertically alternating sequence of insulative and conductive materials arranged in tiers. Steps are at lateral ends of the tiers. Contact openings of different aspect ratios are formed in fill material adjacent the staircase structure, with some openings terminating in the fill material and others exposing portions of the conductive material of upper tiers of the stack structure. Additional conductive material is selectively formed on the exposed portions of the conductive material. The contact openings initially terminating in the fill material are extended to expose portions of the conductive material of lower elevations. Contacts are formed, with some extending to the additional conductive material and others extending to conductive material of the tiers of the lower elevations. Microelectronic devices and systems incorporating such staircase structures and contacts are also disclosed.

公开(公告)号：US20230290721A1

公开(公告)日：2023-09-14

申请号：US17689527

申请日：2022-03-08

申请人： Micron Technology, Inc.

发明人： Jordan D. Greenlee ,  Jiewei Chen ,  Sijia Yu ,  Chieh Hsien Quek ,  Rita J. Klein ,  Nancy M. Lomeli

IPC分类号： H01L23/522 ,  H01L23/532 ,  H01L27/11556 ,  H01L27/11582

CPC分类号： H01L23/5226 ,  H01L23/53257 ,  H01L23/53271 ,  H01L23/5329 ,  H01L27/11556 ,  H01L27/11582

摘要： A method used in forming a memory array comprising strings of memory cells comprises forming memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers. Individual of the conductive tiers comprise laterally-outer edges comprising conductive molybdenum-containing metal material extending horizontally-along its memory block. Channel-material strings extend through the insulative tiers and the conductive tiers. At least one of conductive or semiconductive material is formed extending horizontally-along the memory blocks laterally-outward of the laterally-outer edges comprising the conductive molybdenum-containing metal material that extends horizontally-along its memory block. Insulator material extending horizontally-along the memory blocks is formed laterally-outward of the at least one of the conductive or the semiconductive material that is laterally-outward of the laterally-outer edges comprising the conductive molybdenum-containing metal material. Other embodiments, including structure independent of method, are disclosed.

公开(公告)号：US11158577B2

公开(公告)日：2021-10-26

申请号：US16778346

申请日：2020-01-31

申请人： Micron Technology, Inc.

发明人： Biow Hiem Ong ,  David A. Daycock ,  Chieh Hsien Quek ,  Chii Wean Calvin Chen ,  Christian George Emor ,  Wing Yu Lo

IPC分类号： H01L23/535 ,  H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H01L27/11526 ,  H01L27/11582 ,  H01L27/11556

摘要： Methods for forming microelectronic devices include forming a staircase structure in a stack structure having a vertically alternating sequence of insulative and conductive materials arranged in tiers. Steps are at lateral ends of the tiers. Contact openings of different aspect ratios are formed in fill material adjacent the staircase structure, with some openings terminating in the fill material and others exposing portions of the conductive material of upper tiers of the stack structure. Additional conductive material is selectively formed on the exposed portions of the conductive material. The contact openings initially terminating in the fill material are extended to expose portions of the conductive material of lower elevations. Contacts are formed, with some extending to the additional conductive material and others extending to conductive material of the tiers of the lower elevations. Microelectronic devices and systems incorporating such staircase structures and contacts are also disclosed.