公开(公告)号：US09842965B2

公开(公告)日：2017-12-12

申请号：US15201041

申请日：2016-07-01

Applicant: Micron Technology, Inc.

Inventor： Anton deVilliers ,  Erik Byers ,  Scott E. Sills

IPC: H01L33/32 ,  H01L33/22 ,  H01L33/00 ,  C30B29/40 ,  C30B33/00 ,  H01L21/02 ,  H01L21/308 ,  H01L33/30 ,  G02F1/1333

CPC classification number: H01L33/22 ,  C30B29/406 ,  C30B33/00 ,  G02F1/133377 ,  G02F2202/10 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/0254 ,  H01L21/02658 ,  H01L21/3086 ,  H01L33/0008 ,  H01L33/0066 ,  H01L33/007 ,  H01L33/30 ,  H01L33/32

Abstract: Epitaxial growth methods and devices are described that include a textured surface on a substrate in a liquid crystal device. Geometry of the textured surface provides a organization of a liquid crystal media.

公开(公告)号：US09385276B2

公开(公告)日：2016-07-05

申请号：US14825902

申请日：2015-08-13

Applicant: Micron Technology, Inc.

Inventor： Anton deVilliers ,  Erik Byers ,  Scott E. Sills

IPC: H01L21/02 ,  H01L33/30 ,  H01L33/00 ,  C30B29/40 ,  C30B33/00 ,  H01L21/308 ,  H01L33/22

CPC classification number: H01L33/22 ,  C30B29/406 ,  C30B33/00 ,  G02F1/133377 ,  G02F2202/10 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/0254 ,  H01L21/02658 ,  H01L21/3086 ,  H01L33/0008 ,  H01L33/0066 ,  H01L33/007 ,  H01L33/30 ,  H01L33/32

Abstract: Epitaxial growth methods and devices are described that include a textured surface on a substrate. Geometry of the textured surface provides a reduced lattice mismatch between an epitaxial material and the substrate. Devices formed by the methods described exhibit better interfacial adhesion and lower defect density than devices formed without texture. Silicon substrates are shown with gallium nitride epitaxial growth and devices such as LEDs are formed within the gallium nitride.

公开(公告)号：US08748321B2

公开(公告)日：2014-06-10

申请号：US13901767

申请日：2013-05-24

Applicant: Micron Technology, Inc.

Inventor： Anton deVilliers ,  Erik Byers ,  Scott E. Sills

IPC: H01L21/311

CPC classification number: H01L33/22 ,  C30B29/406 ,  C30B33/00 ,  G02F1/133377 ,  G02F2202/10 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/0254 ,  H01L21/02658 ,  H01L21/3086 ,  H01L33/0008 ,  H01L33/0066 ,  H01L33/007 ,  H01L33/30 ,  H01L33/32

Abstract: Epitaxial growth methods and devices are described that include a textured surface on a substrate. Geometry of the textured surface provides a reduced lattice mismatch between an epitaxial material and the substrate. Devices formed by the methods described exhibit better interfacial adhesion and lower defect density than devices formed without texture. Silicon substrates are shown with gallium nitride epitaxial growth and devices such as LEDs are formed within the gallium nitride.

Abstract translation: 描述了外延生长方法和装置，其包括在基底上的纹理表面。 纹理表面的几何提供外延材料和衬底之间的减小的晶格失配。 通过所述方法形成的装置与不形成纹理的装置相比，表现出更好的界面粘合性和较低的缺陷密度 硅衬底被示出为具有氮化镓外延生长，并且诸如LED的器件形成在氮化镓内。

公开(公告)号：US20160315223A1

公开(公告)日：2016-10-27

申请号：US15201041

申请日：2016-07-01

Applicant: Micron Technology, Inc.

Inventor： Anton deVilliers ,  Erik Byers ,  Scott E. Sills

IPC: H01L33/22 ,  H01L33/00 ,  G02F1/1333 ,  H01L33/32

CPC classification number: H01L33/22 ,  C30B29/406 ,  C30B33/00 ,  G02F1/133377 ,  G02F2202/10 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/0254 ,  H01L21/02658 ,  H01L21/3086 ,  H01L33/0008 ,  H01L33/0066 ,  H01L33/007 ,  H01L33/30 ,  H01L33/32

Abstract: Epitaxial growth methods and devices are described that include a textured surface on a substrate. Geometry of the textured surface provides a reduced lattice mismatch between an epitaxial material and the substrate. Devices formed by the methods described exhibit better interfacial adhesion and lower defect density than devices formed without texture. Silicon substrates are shown with gallium nitride epitaxial growth and devices such as LEDs are formed within the gallium nitride.

公开(公告)号：US11329062B2

公开(公告)日：2022-05-10

申请号：US16230382

申请日：2018-12-21

Applicant: Micron Technology, Inc.

Inventor： Justin B. Dorhout ,  Erik Byers ,  Merri L. Carlson ,  Indra V. Chary ,  Damir Fazil ,  John D. Hopkins ,  Nancy M. Lomeli ,  Eldon Nelson ,  Joel D. Peterson ,  Dimitrios Pavlopoulos ,  Paolo Tessariol ,  Lifang Xu

IPC: H01L21/768 ,  H01L27/11582 ,  H01L27/1157 ,  H01L29/792 ,  H01L29/66

Abstract: A method used in forming a memory array comprises forming a stack comprising vertically-alternating insulative tiers and wordline tiers. The stack comprises an insulator tier above the wordline tiers. The insulator tier comprises first insulator material comprising silicon, nitrogen, and one or more of carbon, oxygen, boron, and phosphorus. The first insulator material is patterned to form first horizontally-elongated trenches in the insulator tier. Second insulator material is formed in the first trenches along sidewalls of the first insulator material. The second insulator material is of different composition from that of the first insulator material and narrows the first trenches. After forming the second insulator material, second horizontally-elongated trenches are formed through the insulative tiers and the wordline tiers. The second trenches are horizontally along the narrowed first trenches laterally between and below the second insulator material. Elevationally-extending strings of memory cells are formed in the stack. Structure independent of method is disclosed.

公开(公告)号：US09112104B2

公开(公告)日：2015-08-18

申请号：US14299742

申请日：2014-06-09

Applicant: Micron Technology, Inc.

Inventor： Anton deVilliers ,  Erik Byers ,  Scott E. Sills

IPC: H01L21/02 ,  H01L33/22 ,  C30B29/40 ,  C30B33/00 ,  H01L21/308 ,  H01L33/30 ,  H01L33/00

CPC classification number: H01L33/22 ,  C30B29/406 ,  C30B33/00 ,  G02F1/133377 ,  G02F2202/10 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/0254 ,  H01L21/02658 ,  H01L21/3086 ,  H01L33/0008 ,  H01L33/0066 ,  H01L33/007 ,  H01L33/30 ,  H01L33/32

Abstract: Epitaxial growth methods and devices are described that include a textured surface on a substrate. Geometry of the textured surface provides a reduced lattice mismatch between an epitaxial material and the substrate. Devices formed by the methods described exhibit better interfacial adhesion and lower defect density than devices formed without texture. Silicon substrates are shown with gallium nitride epitaxial growth and devices such as LEDs are formed within the gallium nitride.

Abstract translation: 描述了外延生长方法和装置，其包括在基底上的纹理表面。 纹理表面的几何提供外延材料和衬底之间的减小的晶格失配。 通过所述方法形成的装置与不形成纹理的装置相比，表现出更好的界面粘合性和较低的缺陷密度 硅衬底被示出为具有氮化镓外延生长，并且诸如LED的器件形成在氮化镓内。

公开(公告)号：US20130256692A1

公开(公告)日：2013-10-03

申请号：US13901767

申请日：2013-05-24

Applicant: Micron Technology, Inc.

Inventor： Anton deVilliers ,  Erik Byers ,  Scott E. Sills

IPC: H01L33/22

CPC classification number: H01L33/22 ,  C30B29/406 ,  C30B33/00 ,  G02F1/133377 ,  G02F2202/10 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/0254 ,  H01L21/02658 ,  H01L21/3086 ,  H01L33/0008 ,  H01L33/0066 ,  H01L33/007 ,  H01L33/30 ,  H01L33/32

Abstract: Epitaxial growth methods and devices are described that include a textured surface on a substrate. Geometry of the textured surface provides a reduced lattice mismatch between an epitaxial material and the substrate. Devices formed by the methods described exhibit better interfacial adhesion and lower defect density than devices formed without texture. Silicon substrates are shown with gallium nitride epitaxial growth and devices such as LEDs are formed within the gallium nitride.

公开(公告)号：US20150349204A1

公开(公告)日：2015-12-03

申请号：US14825902

申请日：2015-08-13

Applicant: Micron Technology, Inc.

Inventor： Anton deVilliers ,  Erik Byers ,  Scott E. Sills

IPC: H01L33/30 ,  H01L33/00 ,  H01L33/22

CPC classification number: H01L33/22 ,  C30B29/406 ,  C30B33/00 ,  G02F1/133377 ,  G02F2202/10 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/0254 ,  H01L21/02658 ,  H01L21/3086 ,  H01L33/0008 ,  H01L33/0066 ,  H01L33/007 ,  H01L33/30 ,  H01L33/32

Abstract: Epitaxial growth methods and devices are described that include a textured surface on a substrate. Geometry of the textured surface provides a reduced lattice mismatch between an epitaxial material and the substrate. Devices formed by the methods described exhibit better interfacial adhesion and lower defect density than devices formed without texture. Silicon substrates are shown with gallium nitride epitaxial growth and devices such as LEDs are formed within the gallium nitride.

Abstract translation: 描述了外延生长方法和装置，其包括在基底上的纹理表面。 纹理表面的几何提供外延材料和衬底之间的减小的晶格失配。 通过所述方法形成的装置与不形成纹理的装置相比，表现出更好的界面粘合性和较低的缺陷密度 硅衬底被示出为具有氮化镓外延生长，并且诸如LED的器件形成在氮化镓内。

公开(公告)号：US20140284614A1

公开(公告)日：2014-09-25

申请号：US14299742

申请日：2014-06-09

Applicant: Micron Technology, Inc.

Inventor： Anton deVilliers ,  Erik Byers ,  Scott E. Sills

IPC: H01L33/22 ,  H01L33/30

CPC classification number: H01L33/22 ,  C30B29/406 ,  C30B33/00 ,  G02F1/133377 ,  G02F2202/10 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/0254 ,  H01L21/02658 ,  H01L21/3086 ,  H01L33/0008 ,  H01L33/0066 ,  H01L33/007 ,  H01L33/30 ,  H01L33/32

Abstract: Epitaxial growth methods and devices are described that include a textured surface on a substrate. Geometry of the textured surface provides a reduced lattice mismatch between an epitaxial material and the substrate. Devices formed by the methods described exhibit better interfacial adhesion and lower defect density than devices formed without texture. Silicon substrates are shown with gallium nitride epitaxial growth and devices such as LEDs are formed within the gallium nitride.

Abstract translation: 描述了外延生长方法和装置，其包括在基底上的纹理表面。 纹理表面的几何提供外延材料和衬底之间的减小的晶格失配。 通过所述方法形成的装置与不形成纹理的装置相比，表现出更好的界面粘附性和较低的缺陷密度。 硅衬底被示出为具有氮化镓外延生长，并且诸如LED的器件形成在氮化镓内。