公开(公告)号：US10083984B2

公开(公告)日：2018-09-25

申请号：US15679727

申请日：2017-08-17

Applicant: Micron Technology, Inc.

Inventor： Jie Li ,  James Mathew ,  Kunal Shrotri ,  Luan C. Tran ,  Gordon A. Haller ,  Yangda Zhang ,  Hongpeng Yu ,  Minsoo Lee

IPC: H01L29/76 ,  H01L27/11582 ,  H01L27/11556 ,  H01L27/11524 ,  H01L27/1157

CPC classification number: H01L27/11582 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H05K999/99

Abstract: Some embodiments include an integrated structure having a first opening extending through a stack of alternating insulative levels and conductive levels. A nitride structure is within the first opening and narrows the first opening to form a second opening. Detectable oxide is between the nitride structure and one or more of the conductive levels. Some embodiments include an integrated structure having a conductive material, a select device gate material over the conductive material, and vertically-stacked conductive levels over the select device gate material. A first opening extends through the vertically-stacked levels to the conductive material and has opposing sidewalls along a cross-section. Nitride liners are along the sidewalls of the first opening. Detectable oxide is between at least one of the nitride liners and one or more of the vertically-stacked conductive levels. Some embodiments include methods for forming integrated structures.

公开(公告)号：US09773805B1

公开(公告)日：2017-09-26

申请号：US15187632

申请日：2016-06-20

Applicant: Micron Technology, Inc.

Inventor： Jie Li ,  James Mathew ,  Kunal Shrotri ,  Luan C. Tran ,  Gordon A. Haller ,  Yangda Zhang ,  Hongpeng Yu ,  Minsoo Lee

IPC: H01L29/51 ,  H01L27/11582 ,  H01L27/11556

CPC classification number: H01L27/11582 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157

Abstract: Some embodiments include an integrated structure having a first opening extending through a stack of alternating insulative levels and conductive levels. A nitride structure is within the first opening and narrows the first opening to form a second opening. Detectable oxide is between the nitride structure and one or more of the conductive levels. Some embodiments include an integrated structure having a conductive material, a select device gate material over the conductive material, and vertically-stacked conductive levels over the select device gate material. A first opening extends through the vertically-stacked levels to the conductive material and has opposing sidewalls along a cross-section. Nitride liners are along the sidewalls of the first opening. Detectable oxide is between at least one of the nitride liners and one or more of the vertically-stacked conductive levels. Some embodiments include methods for forming integrated structures.

公开(公告)号：US11195854B2

公开(公告)日：2021-12-07

申请号：US16783981

申请日：2020-02-06

Applicant: Micron Technology, Inc.

Inventor： Jie Li ,  James Mathew ,  Kunal Shrotri ,  Luan C. Tran ,  Gordon A. Haller ,  Yangda Zhang ,  Hongpeng Yu ,  Minsoo Lee

IPC: H01L27/11582 ,  H01L27/11556 ,  H01L27/11524 ,  H01L27/1157

Abstract: Some embodiments include an integrated structure having a first opening extending through a stack of alternating insulative levels and conductive levels. A nitride structure is within the first opening and narrows the first opening to form a second opening. Detectable oxide is between the nitride structure and one or more of the conductive levels. Some embodiments include an integrated structure having a conductive material, a select device gate material over the conductive material, and vertically-stacked conductive levels over the select device gate material. A first opening extends through the vertically-stacked levels to the conductive material and has opposing sidewalls along a cross-section. Nitride liners are along the sidewalls of the first opening. Detectable oxide is between at least one of the nitride liners and one or more of the vertically-stacked conductive levels. Some embodiments include methods for forming integrated structures.

公开(公告)号：US20180358378A1

公开(公告)日：2018-12-13

申请号：US16107294

申请日：2018-08-21

Applicant: Micron Technology, Inc.

Inventor： Jie Li ,  James Mathew ,  Kunal Shrotri ,  Luan C. Tran ,  Gordon A. Haller ,  Yangda Zhang ,  Hongpeng Yu ,  Minsoo Lee

IPC: H01L27/11582 ,  H01L27/1157 ,  H01L27/11556 ,  H01L27/11524

CPC classification number: H01L27/11582 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H05K999/99

Abstract: Some embodiments include an integrated structure having a first opening extending through a stack of alternating insulative levels and conductive levels. A nitride structure is within the first opening and narrows the first opening to form a second opening. Detectable oxide is between the nitride structure and one or more of the conductive levels. Some embodiments include an integrated structure having a conductive material, a select device gate material over the conductive material, and vertically-stacked conductive levels over the select device gate material. A first opening extends through the vertically-stacked levels to the conductive material and has opposing sidewalls along a cross-section. Nitride liners are along the sidewalls of the first opening. Detectable oxide is between at least one of the nitride liners and one or more of the vertically-stacked conductive levels. Some embodiments include methods for forming integrated structures.

公开(公告)号：US20170365617A1

公开(公告)日：2017-12-21

申请号：US15679727

申请日：2017-08-17

Applicant: Micron Technology, Inc.

Inventor： Jie Li ,  James Mathew ,  Kunal Shrotri ,  Luan C. Tran ,  Gordon A. Haller ,  Yangda Zhang ,  Hongpeng Yu ,  Minsoo Lee

IPC: H01L27/11582 ,  H01L27/11556 ,  H01L29/51

CPC classification number: H01L27/11582 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157

Abstract: Some embodiments include an integrated structure having a first opening extending through a stack of alternating insulative levels and conductive levels. A nitride structure is within the first opening and narrows the first opening to form a second opening. Detectable oxide is between the nitride structure and one or more of the conductive levels. Some embodiments include an integrated structure having a conductive material, a select device gate material over the conductive material, and vertically-stacked conductive levels over the select device gate material. A first opening extends through the vertically-stacked levels to the conductive material and has opposing sidewalls along a cross-section. Nitride liners are along the sidewalls of the first opening. Detectable oxide is between at least one of the nitride liners and one or more of the vertically-stacked conductive levels. Some embodiments include methods for forming integrated structures.

公开(公告)号：US10580792B2

公开(公告)日：2020-03-03

申请号：US16107294

申请日：2018-08-21

Applicant: Micron Technology, Inc.

Inventor： Jie Li ,  James Mathew ,  Kunal Shrotri ,  Luan C. Tran ,  Gordon A. Haller ,  Yangda Zhang ,  Hongpeng Yu ,  Minsoo Lee

IPC: H01L27/11582 ,  H01L27/11556 ,  H01L27/11524 ,  H01L27/1157

Abstract: Some embodiments include an integrated structure having a first opening extending through a stack of alternating insulative levels and conductive levels. A nitride structure is within the first opening and narrows the first opening to form a second opening. Detectable oxide is between the nitride structure and one or more of the conductive levels. Some embodiments include an integrated structure having a conductive material, a select device gate material over the conductive material, and vertically-stacked conductive levels over the select device gate material. A first opening extends through the vertically-stacked levels to the conductive material and has opposing sidewalls along a cross-section. Nitride liners are along the sidewalls of the first opening. Detectable oxide is between at least one of the nitride liners and one or more of the vertically-stacked conductive levels. Some embodiments include methods for forming integrated structures.

公开(公告)号：US20200176471A1

公开(公告)日：2020-06-04

申请号：US16783981

申请日：2020-02-06

Applicant: Micron Technology, Inc.

Inventor： Jie Li ,  James Mathew ,  Kunal Shrotri ,  Luan C. Tran ,  Gordon A. Haller ,  Yangda Zhang ,  Hongpeng Yu ,  Minsoo Lee

IPC: H01L27/11582 ,  H01L27/11556 ,  H01L27/11524 ,  H01L27/1157

Abstract: Some embodiments include an integrated structure having a first opening extending through a stack of alternating insulative levels and conductive levels. A nitride structure is within the first opening and narrows the first opening to form a second opening. Detectable oxide is between the nitride structure and one or more of the conductive levels. Some embodiments include an integrated structure having a conductive material, a select device gate material over the conductive material, and vertically-stacked conductive levels over the select device gate material. A first opening extends through the vertically-stacked levels to the conductive material and has opposing sidewalls along a cross-section. Nitride liners are along the sidewalls of the first opening. Detectable oxide is between at least one of the nitride liners and one or more of the vertically-stacked conductive levels. Some embodiments include methods for forming integrated structures.