公开(公告)号：US09799707B2

公开(公告)日：2017-10-24

申请号：US15210601

申请日：2016-07-14

Applicant: Micron Technology, Inc.

Inventor： Durai Vishak Nirmal Ramaswamy ,  Mark S. Korber

IPC: H01L27/24 ,  H01L45/00 ,  H01L23/528 ,  H01L29/45 ,  H01L29/861

CPC classification number: H01L27/2463 ,  H01L23/528 ,  H01L27/2409 ,  H01L27/2418 ,  H01L29/456 ,  H01L29/861 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1666 ,  H01L45/1683

Abstract: Some embodiments include memory structures having a diode over a memory cell. The memory cell can include programmable material between a pair of electrodes, with the programmable material containing a multivalent metal oxide directly against a high-k dielectric. The diode can include a first diode electrode directly over one of the memory cell electrodes and electrically coupled with the memory cell electrode, and can include a second diode electrode laterally outward of the first diode electrode and not directly over the memory cell. Some embodiments include memory arrays comprising the memory structures, and some embodiments include methods of making the memory structures.

公开(公告)号：US09401476B2

公开(公告)日：2016-07-26

申请号：US14853775

申请日：2015-09-14

Applicant: Micron Technology, Inc.

Inventor： Durai Vishak Nirmal Ramaswamy ,  Mark S. Korber

IPC: H01L27/24 ,  H01L45/00

CPC classification number: H01L27/2463 ,  H01L23/528 ,  H01L27/2409 ,  H01L27/2418 ,  H01L29/456 ,  H01L29/861 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1666 ,  H01L45/1683

Abstract: Some embodiments include memory structures having a diode over a memory cell. The memory cell can include programmable material between a pair of electrodes, with the programmable material containing a multivalent metal oxide directly against a high-k dielectric. The diode can include a first diode electrode directly over one of the memory cell electrodes and electrically coupled with the memory cell electrode, and can include a second diode electrode laterally outward of the first diode electrode and not directly over the memory cell. Some embodiments include memory arrays comprising the memory structures, and some embodiments include methods of making the memory structures.

Abstract translation: 一些实施例包括在存储器单元上具有二极管的存储器结构。 存储单元可以包括一对电极之间的可编程材料，可编程材料直接与高k电介质一起包含多价金属氧化物。 二极管可以包括直接在一个存储单元电极上并与存储单元电极电耦合的第一二极管电极，并且可以包括在第一二极管电极的横向外部并且不直接在存储单元上方的第二二极管电极。 一些实施例包括包括存储器结构的存储器阵列，并且一些实施例包括制造存储器结构的方法。

公开(公告)号：US20160322426A1

公开(公告)日：2016-11-03

申请号：US15210601

申请日：2016-07-14

Applicant: Micron Technology, Inc.

Inventor： Durai Vishak Nirmal Ramaswamy ,  Mark S. Korber

IPC: H01L27/24 ,  H01L23/528 ,  H01L29/861 ,  H01L45/00 ,  H01L29/45

CPC classification number: H01L27/2463 ,  H01L23/528 ,  H01L27/2409 ,  H01L27/2418 ,  H01L29/456 ,  H01L29/861 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1666 ,  H01L45/1683

Abstract: Some embodiments include memory structures having a diode over a memory cell. The memory cell can include programmable material between a pair of electrodes, with the programmable material containing a multivalent metal oxide directly against a high-k dielectric. The diode can include a first diode electrode directly over one of the memory cell electrodes and electrically coupled with the memory cell electrode, and can include a second diode electrode laterally outward of the first diode electrode and not directly over the memory cell. Some embodiments include memory arrays comprising the memory structures, and some embodiments include methods of making the memory structures.

公开(公告)号：US20160005968A1

公开(公告)日：2016-01-07

申请号：US14853775

申请日：2015-09-14

Applicant: Micron Technology, Inc.

Inventor： Durai Vishak Nirmal Ramaswamy ,  Mark S. Korber

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L27/2463 ,  H01L23/528 ,  H01L27/2409 ,  H01L27/2418 ,  H01L29/456 ,  H01L29/861 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1666 ,  H01L45/1683

Abstract: Some embodiments include memory structures having a diode over a memory cell. The memory cell can include programmable material between a pair of electrodes, with the programmable material containing a multivalent metal oxide directly against a high-k dielectric. The diode can include a first diode electrode directly over one of the memory cell electrodes and electrically coupled with the memory cell electrode, and can include a second diode electrode laterally outward of the first diode electrode and not directly over the memory cell. Some embodiments include memory arrays comprising the memory structures, and some embodiments include methods of making the memory structures.

公开(公告)号：US20150056798A1

公开(公告)日：2015-02-26

申请号：US14506235

申请日：2014-10-03

Applicant: Micron Technology, Inc.

Inventor： Noel Rocklein ,  Durai Ramaswamy ,  Dale W. Collins ,  Swapnil Lengade ,  Srividya Krishnamurthy ,  Mark S. Korber

IPC: H01L45/00 ,  H01B1/08 ,  H01L21/283

CPC classification number: H01L45/1641 ,  H01B1/08 ,  H01L21/283 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146 ,  H01L45/147

Abstract: Some embodiments include methods of forming memory cells. Metal oxide may be deposited over a first electrode, with the deposited metal oxide having a relatively low degree of crystallinity. The degree of crystallinity within the metal oxide may be increased after the deposition of the metal oxide. A dielectric material may be formed over the metal oxide, and a second electrode may be formed over the dielectric material. The degree of crystallinity may be increased with a thermal treatment. The thermal treatment may be conducted before, during, and/or after formation of the dielectric material.

Abstract translation: 一些实施例包括形成存储器单元的方法。 金属氧化物可以沉积在第一电极上，沉积的金属氧化物具有相对低的结晶度。 在沉积金属氧化物之后，金属氧化物内的结晶度可以增加。 可以在金属氧化物上形成电介质材料，并且可以在电介质材料上形成第二电极。 可以通过热处理来提高结晶度。 热处理可以在形成介电材料之前，期间和/或之后进行。