公开(公告)号：US11594525B2

公开(公告)日：2023-02-28

申请号：US17751460

申请日：2022-05-23

Applicant: Micron Technology, Inc.

Inventor： Tongbi Jiang ,  Yong Poo Chia

IPC: H01L25/07 ,  H01L25/00 ,  H01L23/31 ,  H01L23/48 ,  H01L21/768 ,  H01L21/82 ,  H01L23/00 ,  H01L21/56 ,  H01L23/538 ,  H01L25/10

Abstract: A device is disclosed which includes at least one integrated circuit die, at least a portion of which is positioned in a body of encapsulant material, and at least one conductive via extending through the body of encapsulant material.

公开(公告)号：US20220285325A1

公开(公告)日：2022-09-08

申请号：US17751460

申请日：2022-05-23

Applicant: Micron Technology, Inc.

Inventor： Tongbi Jiang ,  Yong Poo Chia

IPC: H01L25/07 ,  H01L25/00 ,  H01L23/31 ,  H01L23/48 ,  H01L21/768 ,  H01L21/82 ,  H01L23/00 ,  H01L21/56 ,  H01L23/538 ,  H01L25/10

Abstract: A device is disclosed which includes at least one integrated circuit die, at least a portion of which is positioned in a body of encapsulant material, and at least one conductive via extending through the body of encapsulant material.

公开(公告)号：US20220122938A1

公开(公告)日：2022-04-21

申请号：US17565027

申请日：2021-12-29

Applicant: Micron Technology, Inc.

Inventor： Young Do Kweon ,  Tongbi Jiang

IPC: H01L23/00 ,  H01L21/48 ,  H01L21/56 ,  H01L21/78 ,  H01L23/31 ,  H01L23/498 ,  H01L23/544

Abstract: Microelectronic devices and method of forming a plurality of microelectronic devices on a semiconductor workpiece are disclosed herein. One such method includes placing a plurality of first interconnect elements on a side of a semiconductor workpiece, forming a layer on the side of the workpiece, reshaping the first interconnect elements by heating the first interconnect elements, and coupling a first portion of a plurality of individual second interconnect elements to corresponding first interconnect elements with a second portion of the individual second interconnect elements exposed.

公开(公告)号：US11217556B2

公开(公告)日：2022-01-04

申请号：US16106133

申请日：2018-08-21

Applicant: Micron Technology, Inc.

Inventor： Young Do Kweon ,  Tongbi Jiang

IPC: H01L23/00 ,  H01L23/31 ,  H01L23/544 ,  H01L23/498 ,  H01L21/78 ,  H01L21/48 ,  H01L21/56

Abstract: Microelectronic devices and method of forming a plurality of microelectronic devices on a semiconductor workpiece are disclosed herein. One such method includes placing a plurality of first interconnect elements on a side of a semiconductor workpiece, forming a layer on the side of the workpiece, reshaping the first interconnect elements by heating the first interconnect elements, and coupling a first portion of a plurality of individual second interconnect elements to corresponding first interconnect elements with a second portion of the individual second interconnect elements exposed.

公开(公告)号：US20210134674A1

公开(公告)日：2021-05-06

申请号：US17015003

申请日：2020-09-08

Applicant: Micron Technology, Inc.

Inventor： Jin Li ,  Tongbi Jiang

IPC: H01L21/768 ,  H01L23/00 ,  H01L25/065 ,  H01L25/00

Abstract: A semiconductor component includes a semiconductor substrate, conductive vias in the substrate having terminal portions, a polymer layer on the substrate and back side conductors formed by the terminal portions of the conductive vias embedded in the polymer layer. A stacked semiconductor component includes a plurality of components having aligned conductive vias in electrical communication with one another.

公开(公告)号：US20200279834A1

公开(公告)日：2020-09-03

申请号：US16819647

申请日：2020-03-16

Applicant: Micron Technology, Inc.

Inventor： Tongbi Jiang ,  Yong Poo Chia

IPC: H01L25/07 ,  H01L25/00 ,  H01L23/31 ,  H01L23/48 ,  H01L21/768 ,  H01L21/82 ,  H01L23/00 ,  H01L21/56 ,  H01L23/538 ,  H01L25/10

Abstract: A device is disclosed which includes at least one integrated circuit die, at least a portion of which is positioned in a body of encapsulant material, and at least one conductive via extending through the body of encapsulant material.

公开(公告)号：US20180358324A1

公开(公告)日：2018-12-13

申请号：US16106133

申请日：2018-08-21

Applicant: Micron Technology, Inc.

Inventor： Young Do Kweon ,  Tongbi Jiang

IPC: H01L23/00 ,  H01L21/48

CPC classification number: H01L24/742 ,  H01L21/4853 ,  H01L21/563 ,  H01L21/566 ,  H01L21/78 ,  H01L23/3114 ,  H01L23/49816 ,  H01L23/544 ,  H01L24/11 ,  H01L24/12 ,  H01L24/14 ,  H01L24/16 ,  H01L24/18 ,  H01L24/81 ,  H01L24/94 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2223/54486 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05026 ,  H01L2224/05569 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05599 ,  H01L2224/11013 ,  H01L2224/11015 ,  H01L2224/1183 ,  H01L2224/1184 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/274 ,  H01L2224/7598 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01018 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/384 ,  H01L2924/00

Abstract: Microelectronic devices and method of forming a plurality of microelectronic devices on a semiconductor workpiece are disclosed herein. One such method includes placing a plurality of first interconnect elements on a side of a semiconductor workpiece, forming a layer on the side of the workpiece, reshaping the first interconnect elements by heating the first interconnect elements, and coupling a first portion of a plurality of individual second interconnect elements to corresponding first interconnect elements with a second portion of the individual second interconnect elements exposed.

公开(公告)号：US10083931B2

公开(公告)日：2018-09-25

申请号：US14964096

申请日：2015-12-09

Applicant: Micron Technology, Inc.

Inventor： Young Do Kweon ,  Tongbi Jiang

IPC: H01L23/00 ,  H01L21/78 ,  H01L23/544 ,  H01L21/48 ,  H01L23/31 ,  H01L23/498 ,  H01L21/56

CPC classification number: H01L24/742 ,  H01L21/4853 ,  H01L21/563 ,  H01L21/566 ,  H01L21/78 ,  H01L23/3114 ,  H01L23/49816 ,  H01L23/544 ,  H01L24/11 ,  H01L24/12 ,  H01L24/14 ,  H01L24/16 ,  H01L24/18 ,  H01L24/81 ,  H01L24/94 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2223/54486 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05026 ,  H01L2224/05569 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05599 ,  H01L2224/11013 ,  H01L2224/11015 ,  H01L2224/1183 ,  H01L2224/1184 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/274 ,  H01L2224/7598 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01018 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/384 ,  H01L2924/00

Abstract: Microelectronic devices and method of forming a plurality of microelectronic devices on a semiconductor workpiece are disclosed herein. One such method includes placing a plurality of first interconnect elements on a side of a semiconductor workpiece, forming a layer on the side of the workpiece, reshaping the first interconnect elements by heating the first interconnect elements, and coupling a first portion of a plurality of individual second interconnect elements to corresponding first interconnect elements with a second portion of the individual second interconnect elements exposed.

公开(公告)号：US20150118796A1

公开(公告)日：2015-04-30

申请号：US14583984

申请日：2014-12-29

Applicant: Micron Technology, Inc.

Inventor： Young Do Kweon ,  Tongbi Jiang

IPC: H01L23/00 ,  H01L21/78

CPC classification number: H01L24/742 ,  H01L21/4853 ,  H01L21/563 ,  H01L21/566 ,  H01L21/78 ,  H01L23/3114 ,  H01L23/49816 ,  H01L23/544 ,  H01L24/11 ,  H01L24/12 ,  H01L24/14 ,  H01L24/16 ,  H01L24/81 ,  H01L24/94 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2223/54486 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05026 ,  H01L2224/05569 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/11013 ,  H01L2224/11015 ,  H01L2224/1183 ,  H01L2224/1184 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/274 ,  H01L2224/7598 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01018 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/384 ,  H01L2924/00 ,  H01L2224/05599

Abstract: Microelectronic devices and method of forming a plurality of microelectronic devices on a semiconductor workpiece are disclosed herein. One such method includes placing a plurality of first interconnect elements on a side of a semiconductor workpiece, forming a layer on the side of the workpiece, reshaping the first interconnect elements by heating the first interconnect elements, and coupling a first portion of a plurality of individual second interconnect elements to corresponding first interconnect elements with a second portion of the individual second interconnect elements exposed.

Abstract translation: 本文公开了在半导体工件上形成多个微电子器件的微电子器件和方法。 一种这样的方法包括将多个第一互连元件放置在半导体工件的一侧上，在工件侧面上形成层，通过加热第一互连元件来重塑第一互连元件，以及将多个第一互连元件的第一部分 单独的第二互连元件到相应的第一互连元件，其中所述单个第二互连元件的第二部分被暴露。

公开(公告)号：US08846424B2

公开(公告)日：2014-09-30

申请号：US14047831

申请日：2013-10-07

Applicant: Micron Technology, Inc.

Inventor： Jin Li ,  Tongbi Jiang

IPC: H01L21/00 ,  H01L33/50 ,  H01L33/08 ,  H01L33/58

CPC classification number: H01L33/58 ,  H01L25/0753 ,  H01L33/08 ,  H01L33/50 ,  H01L33/505 ,  H01L2924/0002 ,  Y10T29/49117 ,  H01L2924/00

Abstract: Solid state lighting (SSL) devices including a plurality of SSL emitters and methods for manufacturing SSL devices are disclosed. Several embodiments of SSL devices in accordance with the technology include a support having a first lead and a second lead, a plurality of individual SSL emitters attached to the support, and a plurality of lenses. Each SSL emitter has a first contact electrically coupled to the first lead of the support and a second contact electrically coupled to the second lead of the support such that the SSL emitters are commonly connected. Each lens has a curved surface and is aligned with a single corresponding SSL emitter.

Abstract translation: 公开了包括多个SSL发射器的固态照明（SSL）设备和用于制造SSL设备的方法。 根据该技术的SSL设备的几个实施例包括具有第一引线和第二引线，附接到支撑件的多个单独的SSL发射器和多个透镜的支撑件。 每个SSL发射器具有电耦合到支撑件的第一引线的第一触点和电耦合到支撑件的第二引线的第二触点，使得SSL发射器被共同连接。 每个镜头都有一个曲面，并与一个对应的SSL发射器对齐。