公开(公告)号：US20190067145A1

公开(公告)日：2019-02-28

申请号：US15683059

申请日：2017-08-22

申请人： Micron Technology, Inc.

发明人： Hyunsuk Chun ,  Shams U. Arifeen ,  Chan H. Yoo ,  Tracy N. Tennant

IPC分类号： H01L23/31 ,  H01L21/48 ,  H01L23/498 ,  H01L21/683 ,  H01L21/56

摘要： A semiconductor device having a semiconductor die, a redistribution layer (RDL), and an encapsulant. The RDL layer can be formed on a first surface of the semiconductor die. The encapsulant can enclose a second surface and side surfaces of the semiconductor die. The encapsulant can enclose side portions of the RDL.

公开(公告)号：US20210202337A1

公开(公告)日：2021-07-01

申请号：US17202542

申请日：2021-03-16

申请人： Micron Technology, Inc.

发明人： Hyunsuk Chun ,  Shams U. Arifeen ,  Chan H. Yoo ,  Tracy N. Tennant

IPC分类号： H01L23/31 ,  H01L21/48 ,  H01L23/498 ,  H01L21/683 ,  H01L21/56

摘要： A semiconductor device having a semiconductor die, a redistribution layer (RDL), and an encapsulant. The RDL layer can be formed on a first surface of the semiconductor die. The encapsulant can enclose a second surface and side surfaces of the semiconductor die. The encapsulant can enclose side portions of the RDL.

公开(公告)号：US11887920B2

公开(公告)日：2024-01-30

申请号：US16952703

申请日：2020-11-19

申请人： Micron Technology, Inc.

发明人： Hyunsuk Chun ,  Chan H. Yoo ,  Tracy N. Tennant

IPC分类号： H01L23/498 ,  H01L21/48 ,  H01L23/31 ,  H01L23/00

CPC分类号： H01L23/49838 ,  H01L21/4857 ,  H01L23/3128 ,  H01L23/49822 ,  H01L23/562

摘要： Embodiments of a redistribution layer structure comprise a low-k dielectric material and incorporating a reinforcement structure proximate and inward of a peripheral edge thereof, the reinforcement structure comprising conductive material electrically isolated from conductive paths through the RDL structure. Semiconductor packages including an embodiment of the RDL structure and methods of fabricating such RDL structures are also disclosed.

公开(公告)号：US10861782B2

公开(公告)日：2020-12-08

申请号：US16106791

申请日：2018-08-21

申请人： Micron Technology, Inc.

发明人： Hyunsuk Chun ,  Chan H. Yoo ,  Tracy N. Tennant

IPC分类号： H01L23/498 ,  H01L21/48 ,  H01L23/31 ,  H01L23/00

摘要： Embodiments of a redistribution layer structure comprise a low-k dielectric material and incorporating a reinforcement structure proximate and inward of a peripheral edge thereof, the reinforcement structure comprising conductive material electrically isolated from conductive paths through the RDL structure. Semiconductor packages including an embodiment of the RDL structure and methods of fabricating such RDL structures are also disclosed.

公开(公告)号：US11688658B2

公开(公告)日：2023-06-27

申请号：US17202542

申请日：2021-03-16

申请人： Micron Technology, Inc.

发明人： Hyunsuk Chun ,  Shams U. Arifeen ,  Chan H. Yoo ,  Tracy N. Tennant

IPC分类号： H01L21/48 ,  H01L23/31 ,  H01L23/498 ,  H01L21/683 ,  H01L21/56

CPC分类号： H01L23/3128 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/565 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/49816 ,  H01L23/49838 ,  H01L23/3114 ,  H01L23/3135 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2224/16225 ,  H01L2224/18 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/181 ,  H01L2924/00012

摘要： A semiconductor device having a semiconductor die, a redistribution layer (RDL), and an encapsulant. The RDL layer can be formed on a first surface of the semiconductor die. The encapsulant can enclose a second surface and side surfaces of the semiconductor die. The encapsulant can enclose side portions of the RDL.

公开(公告)号：US20210074623A1

公开(公告)日：2021-03-11

申请号：US16952703

申请日：2020-11-19

申请人： Micron Technology, Inc.

发明人： Hyunsuk Chun ,  Chan H. Yoo ,  Tracy N. Tennant

IPC分类号： H01L23/498 ,  H01L21/48 ,  H01L23/31 ,  H01L23/00

摘要： Embodiments of a redistribution layer structure comprise a low-k dielectric material and incorporating a reinforcement structure proximate and inward of a peripheral edge thereof, the reinforcement structure comprising conductive material electrically isolated from conductive paths through the RDL structure. Semiconductor packages including an embodiment of the RDL structure and methods of fabricating such RDL structures are also disclosed.

公开(公告)号：US20200066625A1

公开(公告)日：2020-02-27

申请号：US16106791

申请日：2018-08-21

申请人： Micron Technology, Inc.

发明人： Hyunsuk Chun ,  Chan H. Yoo ,  Tracy N. Tennant

IPC分类号： H01L23/498 ,  H01L23/00 ,  H01L23/31 ,  H01L21/48

摘要： Embodiments of a redistribution layer structure comprise a low-k dielectric material and incorporating a reinforcement structure proximate and inward of a peripheral edge thereof, the reinforcement structure comprising conductive material electrically isolated from conductive paths through the RDL structure. Semiconductor packages including an embodiment of the RDL structure and methods of fabricating such RDL structures are also disclosed.