公开(公告)号：US20190252251A1

公开(公告)日：2019-08-15

申请号：US16391600

申请日：2019-04-23

Applicant: Micron Technology, Inc.

Inventor： Tieh-Chiang Wu ,  Wen-Chieh Wang ,  Sheng-Wei Yang

IPC: H01L21/768 ,  H01L29/06 ,  H01L27/108 ,  H01L27/11582 ,  H01L21/764 ,  H01L49/02

CPC classification number: H01L21/76895 ,  H01L21/764 ,  H01L21/76805 ,  H01L21/7682 ,  H01L21/76838 ,  H01L21/76883 ,  H01L27/108 ,  H01L27/10823 ,  H01L27/10876 ,  H01L27/11582 ,  H01L28/00 ,  H01L29/0649 ,  H01L29/4991

Abstract: A memory device with a dielectric layer or an air gap between contacts and a method of making the same are disclosed. The method comprises a series of steps including forming a plurality of conductive lines having trenches therebetween; forming a contact layer in the trench; and forming a dielectric layer interposed in the contact layer and configured to divide the contact layer into two contacts. The method also comprises removing the dielectric layer to form a space and forming a cap layer over the two contacts to form an air gap therein. The method further comprises forming a second air gap between the conductive line and the two contacts.

公开(公告)号：US10854514B2

公开(公告)日：2020-12-01

申请号：US16391600

申请日：2019-04-23

Applicant: Micron Technology, Inc.

Inventor： Tieh-Chiang Wu ,  Wen-Chieh Wang ,  Sheng-Wei Yang

IPC: H01L21/768 ,  H01L21/764 ,  H01L29/06 ,  H01L27/108 ,  H01L27/11582 ,  H01L49/02 ,  H01L29/49

Abstract: A memory device with a dielectric layer or an air gap between contacts and a method of making the same are disclosed. The method comprises a series of steps including forming a plurality of conductive lines having trenches therebetween; forming a contact layer in the trench; and forming a dielectric layer interposed in the contact layer and configured to divide the contact layer into two contacts. The method also comprises removing the dielectric layer to form a space and forming a cap layer over the two contacts to form an air gap therein. The method further comprises forming a second air gap between the conductive line and the two contacts.

公开(公告)号：US10388564B2

公开(公告)日：2019-08-20

申请号：US14993099

申请日：2016-01-12

Applicant: Micron Technology, Inc.

Inventor： Tieh-Chiang Wu ,  Wen-Chieh Wang ,  Sheng-Wei Yang

IPC: H01L21/768 ,  H01L21/764 ,  H01L29/06 ,  H01L27/108 ,  H01L27/11582 ,  H01L49/02 ,  H01L29/49

Abstract: A memory device with a dielectric layer or an air gap between contacts and a method of making the same are disclosed. The method comprises a series of steps including forming a plurality of conductive lines having trenches therebetween; forming a contact layer in the trench; and forming a dielectric layer interposed in the contact layer and configured to divide the contact layer into two contacts. The method also comprises removing the dielectric layer to form a space and forming a cap layer over the two contacts to form an air gap therein. The method further comprises forming a second air gap between the conductive line and the two contacts.