公开(公告)号：US20230267996A1

公开(公告)日：2023-08-24

申请号：US18310736

申请日：2023-05-02

Applicant: Micron Technology, Inc.

Inventor： Lingming Yang ,  Xuan Anh Tran ,  Karthik Sarpatwari ,  Francesco Douglas Verna-Ketel ,  Jessica Chen ,  Nevil N. Gajera ,  Amitava Majumdar

IPC: G11C11/56 ,  G11C13/00

CPC classification number: G11C11/5678 ,  G11C13/0004 ,  G11C13/0028 ,  G11C13/0069 ,  G11C13/0026 ,  G11C2013/0092

Abstract: Systems, methods and apparatus to program a memory cell to have a threshold voltage to a level representative of one value among more than two predetermined values. A first voltage pulse is driven across the memory cell to cause a predetermined current to go through the memory cell. The first voltage pulse is sufficient to program the memory cell to a level representative of a first value. To program the memory cell to a level representative of a second value, a second voltage pulse, different from the first voltage pulse, is driven across the memory cell within a time period of residual poling in the memory cell caused by the first voltage pulse.

公开(公告)号：US20220392526A1

公开(公告)日：2022-12-08

申请号：US17337806

申请日：2021-06-03

Applicant: Micron Technology, Inc.

Inventor： Lingming Yang ,  Xuan Anh Tran ,  Karthik Sarpatwari ,  Francesco Douglas Verna-Ketel ,  Jessica Chen ,  Nevil N. Gajera ,  Amitava Majumdar

IPC: G11C11/56 ,  G11C13/00

Abstract: Systems, methods and apparatus to program a memory cell to have a threshold voltage to a level representative of one value among more than two predetermined values. A first voltage pulse is driven across the memory cell to cause a predetermined current to go through the memory cell. The first voltage pulse is sufficient to program the memory cell to a level representative of a first value. To program the memory cell to a level representative of a second value, a second voltage pulse, different from the first voltage pulse, is driven across the memory cell within a time period of residual poling in the memory cell caused by the first voltage pulse.

公开(公告)号：US11694747B2

公开(公告)日：2023-07-04

申请号：US17337806

申请日：2021-06-03

Applicant: Micron Technology, Inc.

Inventor： Lingming Yang ,  Xuan Anh Tran ,  Karthik Sarpatwari ,  Francesco Douglas Verna-Ketel ,  Jessica Chen ,  Nevil N. Gajera ,  Amitava Majumdar

IPC: G11C13/00 ,  G11C11/56

CPC classification number: G11C11/5678 ,  G11C13/0004 ,  G11C13/0026 ,  G11C13/0028 ,  G11C13/0069 ,  G11C2013/0092

Abstract: Systems, methods and apparatus to program a memory cell to have a threshold voltage to a level representative of one value among more than two predetermined values. A first voltage pulse is driven across the memory cell to cause a predetermined current to go through the memory cell. The first voltage pulse is sufficient to program the memory cell to a level representative of a first value. To program the memory cell to a level representative of a second value, a second voltage pulse, different from the first voltage pulse, is driven across the memory cell within a time period of residual poling in the memory cell caused by the first voltage pulse.