公开(公告)号：US20240164114A1

公开(公告)日：2024-05-16

申请号：US18522637

申请日：2023-11-29

申请人： Micron Technology, Inc.

发明人： Hung-Wei Liu ,  Vassil N. Antonov ,  Ashonita A. Chavan ,  Darwin Franseda Fan ,  Jeffery B. Hull ,  Anish A. Khandekar ,  Masihhur R. Laskar ,  Albert Liao ,  Xue-Feng Lin ,  Manuj Nahar ,  Irina V. Vasilyeva

IPC分类号： H10B53/20 ,  H01L21/223 ,  H01L29/10 ,  H01L29/66 ,  H01L29/78 ,  H10B51/20 ,  H10B51/30 ,  H10B53/30

CPC分类号： H10B53/20 ,  H01L21/223 ,  H01L29/1037 ,  H01L29/66666 ,  H01L29/7827 ,  H10B51/20 ,  H10B51/30 ,  H10B53/30

摘要： A method of forming a vertical transistor comprising a top source/drain region, a bottom source/drain region, a channel region vertically between the top and bottom source/drain regions, and a gate operatively laterally-adjacent the channel region comprises, in multiple time-spaced microwave annealing steps, microwave annealing at least the channel region. The multiple time-spaced microwave annealing steps reduce average concentration of elemental-form H in the channel region from what it was before start of the multiple time-spaced microwave annealing steps. The reduced average concentration of elemental-form H is 0.005 to less than 1 atomic percent. Structure embodiments are disclosed.

公开(公告)号：US20220157837A1

公开(公告)日：2022-05-19

申请号：US17589310

申请日：2022-01-31

申请人： Micron Technology, Inc.

发明人： Hung-Wei Liu ,  Vassil N, Antonov ,  Ashonita A. Chavan ,  Darwin Franseda Fan ,  Jeffrey B. Hull ,  Anish A. Khandekar ,  Masihhur R. Laskar ,  Albert Liao ,  Xue-Feng Lin ,  Manuj Nahar ,  Irina V. Vasilyeva

IPC分类号： H01L27/11514 ,  H01L27/11507 ,  H01L27/1159 ,  H01L27/11597 ,  H01L29/78 ,  H01L29/66 ,  H01L21/223 ,  H01L29/10

摘要： A method of forming a vertical transistor comprising a top source/drain region, a bottom source/drain region, a channel region vertically between the top and bottom source/drain regions, and a gate operatively laterally-adjacent the channel region comprises, in multiple time-spaced microwave annealing steps, microwave annealing at least the channel region. The multiple time-spaced microwave annealing steps reduce average concentration of elemental-form H in the channel region from what it was before start of the multiple time-spaced microwave annealing steps. The reduced average concentration of elemental-form H is 0.005 to less than 1 atomic percent. Structure embodiments are disclosed.

公开(公告)号：US20220093617A1

公开(公告)日：2022-03-24

申请号：US17027046

申请日：2020-09-21

申请人： Micron Technology, Inc.

发明人： Hung-Wei Liu ,  Vassil N. Antonov ,  Ashonita A. Chavan ,  Darwin Franseda Fan ,  Jeffery B. Hull ,  Anish A. Khandekar ,  Masihhur R. Laskar ,  Albert Liao ,  Xue-Feng Lin ,  Manuj Nahar ,  Irina V. Vasilyeva

IPC分类号： H01L27/11514 ,  H01L27/11507 ,  H01L29/78 ,  H01L21/223 ,  H01L27/11597 ,  H01L27/1159 ,  H01L29/10 ,  H01L29/66

摘要： A method of forming a vertical transistor comprising a top source/drain region, a bottom source/drain region, a channel region vertically between the top and bottom source/drain regions, and a gate operatively laterally-adjacent the channel region comprises, in multiple time-spaced microwave annealing steps, microwave annealing at least the channel region. The multiple time-spaced microwave annealing steps reduce average concentration of elemental-form H in the channel region from what it was before start of the multiple time-spaced microwave annealing steps. The reduced average concentration of elemental-form H is 0.005 to less than 1 atomic percent. Structure embodiments are disclosed.

公开(公告)号：US11871582B2

公开(公告)日：2024-01-09

申请号：US17589310

申请日：2022-01-31

申请人： Micron Technology, Inc.

发明人： Hung-Wei Liu ,  Vassil N. Antonov ,  Ashonita A. Chavan ,  Darwin Franseda Fan ,  Jeffery B. Hull ,  Anish A. Khandekar ,  Masihhur R. Laskar ,  Albert Liao ,  Xue-Feng Lin ,  Manuj Nahar ,  Irina V. Vasilyeva

IPC分类号： H10B53/20 ,  H01L29/78 ,  H01L29/66 ,  H01L29/10 ,  H01L21/223 ,  H10B51/20 ,  H10B51/30 ,  H10B53/30

CPC分类号： H10B53/20 ,  H01L21/223 ,  H01L29/1037 ,  H01L29/66666 ,  H01L29/7827 ,  H10B51/20 ,  H10B51/30 ,  H10B53/30

摘要： A method of forming a vertical transistor comprising a top source/drain region, a bottom source/drain region, a channel region vertically between the top and bottom source/drain regions, and a gate operatively laterally-adjacent the channel region comprises, in multiple time-spaced microwave annealing steps, microwave annealing at least the channel region. The multiple time-spaced microwave annealing steps reduce average concentration of elemental-form H in the channel region from what it was before start of the multiple time-spaced microwave annealing steps. The reduced average concentration of elemental-form H is 0.005 to less than 1 atomic percent. Structure embodiments are disclosed.

公开(公告)号：US11264395B1

公开(公告)日：2022-03-01

申请号：US17027046

申请日：2020-09-21

申请人： Micron Technology, Inc.

发明人： Hung-Wei Liu ,  Vassil N. Antonov ,  Ashonita A. Chavan ,  Darwin Franseda Fan ,  Jeffery B. Hull ,  Anish A. Khandekar ,  Masihhur R. Laskar ,  Albert Liao ,  Xue-Feng Lin ,  Manuj Nahar ,  Irina V. Vasilyeva

IPC分类号： H01L27/11514 ,  H01L27/11507 ,  H01L29/78 ,  H01L29/66 ,  H01L27/11597 ,  H01L27/1159 ,  H01L29/10 ,  H01L21/223

摘要： A method of forming a vertical transistor comprising a top source/drain region, a bottom source/drain region, a channel region vertically between the top and bottom source/drain regions, and a gate operatively laterally-adjacent the channel region comprises, in multiple time-spaced microwave annealing steps, microwave annealing at least the channel region. The multiple time-spaced microwave annealing steps reduce average concentration of elemental-form H in the channel region from what it was before start of the multiple time-spaced microwave annealing steps. The reduced average concentration of elemental-form H is 0.005 to less than 1 atomic percent. Structure embodiments are disclosed.