Pulsed magnetron sputtering deposition with preionization
    2.
    发明申请
    Pulsed magnetron sputtering deposition with preionization 有权
    具有预电离的脉冲磁控溅射沉积

    公开(公告)号:US20070034498A1

    公开(公告)日:2007-02-15

    申请号:US11525368

    申请日:2006-09-22

    IPC分类号: C23C14/32 C23C14/00

    摘要: The present invention relates to the deposition in a magnetron reactor (1) equipped with a magnetron cathode (MC) of at least one material on a substrate (11a), according to which process said material is vaporized by magnetron sputtering, using a gas that is ionized in pulsed mode. To this effect and in order to favour the formation of high current pulses of short duration while avoiding the formation of electric arcs and while enabling an effective ionisation of the sputtered vapour, a preionization of the said gas prior to the application of the main voltage pulse on the magnetron cathode (MC) is carried out in order to generate current pulses (CP) whose decay time (Td), after cut-off of the main voltage pulse (VP) is shorter than 5 μs.

    摘要翻译: 本发明涉及在基板(11a)上配备有至少一种材料的磁控管阴极(MC)的磁控管反应器(1)中的沉积,根据该方法,所述材料通过磁控溅射气化,使用气体 在脉冲模式下电离。 为此,为了有利于形成短持续时间的高电流脉冲,同时避免电弧的形成,并且同时能够有效地电离溅射的蒸汽,在施加主电压脉冲之前对所述气体进行预电离 在磁控管阴极(MC)上进行,以便在主电压脉冲(VP)的截止值小于5之后产生其衰减时间(T> D )的电流脉冲(CP) 麝香