公开(公告)号：US08110739B2

公开(公告)日：2012-02-07

申请号：US11896087

申请日：2007-08-29

申请人： Miin-Jang Chen ,  Wen-Ching Hsu ,  Ya-Lan Ho ,  Jung-Tsung Wang

发明人： Miin-Jang Chen ,  Wen-Ching Hsu ,  Ya-Lan Ho ,  Jung-Tsung Wang

IPC分类号： H01L31/0216 ,  H01L31/0224

CPC分类号： H01L31/022466 ,  H01L31/02168 ,  H01L31/022483 ,  H01L31/0236 ,  H01L31/068 ,  H01L31/072 ,  H01L31/1884 ,  Y02E10/50

摘要： The invention provides a solar cell and a method of fabricating the same. The solar cell, according to a preferred embodiment of the invention, includes a semiconductor structure combination and a multi-atomic-layer structure formed of at least one oxide. The semiconductor structure combination includes at least one p-n junction and has an illuminated surface. The multi-atomic-layer structure overlays the illuminated surface of the semiconductor structure combination. In particular, the multi-atomic-layer structure serves as a surface passivation layer, a transparent conductive layer, and further as an anti-reflective layer.

摘要翻译： 本发明提供一种太阳能电池及其制造方法。 根据本发明的优选实施例的太阳能电池包括由至少一种氧化物形成的半导体结构组合和多原子层结构。 半导体结构组合包括至少一个p-n结并具有照明表面。 多原子层结构覆盖半导体结构组合的照射表面。 特别地，多原子层结构用作表面钝化层，透明导电层，并且还用作抗反射层。

公开(公告)号：US20080072959A1

公开(公告)日：2008-03-27

申请号：US11896087

申请日：2007-08-29

申请人： Miin-Jang Chen ,  Wen-Ching Hsu ,  Ya-Lan Ho ,  Jung-Tsung Wang

发明人： Miin-Jang Chen ,  Wen-Ching Hsu ,  Ya-Lan Ho ,  Jung-Tsung Wang

IPC分类号： H01L31/00

CPC分类号： H01L31/022466 ,  H01L31/02168 ,  H01L31/022483 ,  H01L31/0236 ,  H01L31/068 ,  H01L31/072 ,  H01L31/1884 ,  Y02E10/50

摘要： The invention provides a solar cell and a method of fabricating the same. The solar cell, according to a preferred embodiment of the invention, includes a semiconductor structure combination and a multi-atomic-layer structure formed of at least one oxide. The semiconductor structure combination includes at least one p-n junction and has an illuminated surface. The multi-atomic-layer structure overlays the illuminated surface of the semiconductor structure combination. In particular, the multi-atomic-layer structure serves as a surface passivation layer, a transparent conductive layer, and further as an anti-reflective layer.

摘要翻译： 本发明提供一种太阳能电池及其制造方法。 根据本发明的优选实施例的太阳能电池包括由至少一种氧化物形成的半导体结构组合和多原子层结构。 半导体结构组合包括至少一个p-n结并具有照明表面。 多原子层结构覆盖半导体结构组合的照射表面。 特别地，多原子层结构用作表面钝化层，透明导电层，并且还用作抗反射层。

公开(公告)号：US07816233B2

公开(公告)日：2010-10-19

申请号：US11245163

申请日：2005-10-07

申请人： Jer-Liang Yeh ,  Jing-Yi Huang ,  Wen-Ching Hsu ,  Ya-Lan Ho ,  Sung-Lin Hsu ,  Jung-Tsung Wang

发明人： Jer-Liang Yeh ,  Jing-Yi Huang ,  Wen-Ching Hsu ,  Ya-Lan Ho ,  Sung-Lin Hsu ,  Jung-Tsung Wang

IPC分类号： H01L21/46

CPC分类号： H01L21/76256

摘要： The invention provides a method of manufacturing a composite wafer structure. In particular, the method, according to the invention, is based on the fracture mechanics theory to actively control fracture induced during the manufacture of the composite wafer structure and to further protect from undesired edge damage. Thereby, the method, according to the invention, can enhance the yield rate of industrial mass production regarding the composite wafer structure.

摘要翻译： 本发明提供一种制造复合晶片结构的方法。 特别地，根据本发明的方法是基于断裂力学理论来主动控制在复合晶片结构的制造过程中引起的断裂并进一步防止不希望的边缘损伤。 因此，根据本发明的方法可以提高关于复合晶片结构的工业量产的产率。

公开(公告)号：US20070020873A1

公开(公告)日：2007-01-25

申请号：US11245163

申请日：2005-10-07

申请人： Jer-Liang Yeh ,  Jing-Yi Huang ,  Wen-Ching Hsu ,  Ya-Lan Ho ,  Sung-Lin Hsu ,  Jung-Tsung Wang

发明人： Jer-Liang Yeh ,  Jing-Yi Huang ,  Wen-Ching Hsu ,  Ya-Lan Ho ,  Sung-Lin Hsu ,  Jung-Tsung Wang

IPC分类号： H01L21/00 ,  H01L21/76 ,  H01L21/30

CPC分类号： H01L21/76256

摘要： The invention provides a method of manufacturing a composite wafer structure. In particular, the method, according to the invention, is based on the fracture mechanics theory to actively control fracture induced during the manufacture of the composite wafer structure and to further protect from undesired edge damage. Thereby, the method, according to the invention, can enhance the yield rate of industrial mass production regarding the composite wafer structure.

摘要翻译： 本发明提供一种制造复合晶片结构的方法。 特别地，根据本发明的方法是基于断裂力学理论来主动控制在复合晶片结构的制造过程中引起的断裂并进一步防止不希望的边缘损伤。 因此，根据本发明的方法可以提高关于复合晶片结构的工业量产的产率。