公开(公告)号：US07508369B2

公开(公告)日：2009-03-24

申请号：US10866764

申请日：2004-06-15

申请人： Mika Nakamura ,  Katsumi Adachi ,  Kiyohiro Kawasaki ,  Katsuji Hattori

发明人： Mika Nakamura ,  Katsumi Adachi ,  Kiyohiro Kawasaki ,  Katsuji Hattori

IPC分类号： G09G3/36

CPC分类号： G02F1/1395 ,  G02F1/133707 ,  G02F2001/13629 ,  G09G3/3648 ,  G09G3/3659 ,  G09G2300/0491 ,  G09G2300/0876 ,  G09G2310/061 ,  G09G2320/0219

摘要： A method for providing a high-response and wide-viewing-angle liquid crystal panel capable of causing a transition of liquid crystal, called the OCB mode, into a bend configuration in a short time, by providing a period in which a potential difference higher than that in a normal image display period is continuously applied between gate lines and opposing electrodes or between pixel electrodes and the opposing electrodes of a liquid crystal panel.

摘要翻译： 一种用于提供高反应性和宽视角液晶面板的方法，该液晶面板能够通过提供电位差更高的周期而使得液晶的转变（称为OCB模式）在短时间内成为弯曲结构 与正常图像显示期间相比，在栅极线和对置电极之间或像素电极与液晶面板的对置电极之间连续地施加。

公开(公告)号：US07023416B1

公开(公告)日：2006-04-04

申请号：US09868184

申请日：2000-10-19

申请人： Mika Nakamura ,  Katsumi Adachi ,  Kiyohiro Kawasaki ,  Katsuji Hattori

发明人： Mika Nakamura ,  Katsumi Adachi ,  Kiyohiro Kawasaki ,  Katsuji Hattori

IPC分类号： G09G3/36

CPC分类号： G02F1/1395 ,  G02F1/133707 ,  G02F2001/13629 ,  G09G3/3648 ,  G09G3/3659 ,  G09G2300/0491 ,  G09G2300/0876 ,  G09G2310/061 ,  G09G2320/0219

摘要： To provide a high-response and wide-viewing-angle liquid crystal panel capable of causing a transition of liquid crystal, which is called the OCB mode, into a bend configuration in a short time, there is provided a period in which a potential difference higher than that in a normal image display period is continuously applied between gate lines and opposing electrodes or between pixel electrodes and the opposing electrodes of the liquid crystal panel.Also, ingenuities are exercised on the period in which the potential difference is continuously applied between them and on the structure of picture elements.

摘要翻译： 为了提供能够在短时间内使液晶的转变成为弯曲形状的高反应性，宽视角的液晶面板，这种液晶面板在短时间内成为弯曲结构， 在栅极线和对置电极之间或像素电极与液晶面板的对置电极之间连续地施加比正常图像显示周期中高的浓度。 而且，在它们之间连续施加电位差与图像元素结构的时间段上进行连接。

公开(公告)号：US07898608B2

公开(公告)日：2011-03-01

申请号：US11902259

申请日：2007-09-20

申请人： Kiyohiro Kawasaki

发明人： Kiyohiro Kawasaki

IPC分类号： G02F1/136

CPC分类号： G02F1/136286 ,  G02F1/134363 ,  G02F1/1362 ,  G02F2001/136231 ,  G02F2001/136236 ,  H01L27/124 ,  H01L27/1288

摘要： A four-mask process and a three-mask process proposal are constructed for a TN-type liquid crystal display device and an IPS-type liquid crystal device in which the formation of a passivation insulating layer is not required by streamlining the formation of a scan line and a pseudo-pixel element, both comprising a laminate made of a transparent conductive layer and a metal layer, at the same time and the formation of the transparent conductive pixel electrode by removing the metal layer on the pseudo-pixel electrode at the time of the formation of the opening in the gate insulating layer, by streamlining the treatment of the formation process of the contact and the formation process of the protective insulating layer using one photomask due to the introduction of half-tone exposure technology, and the formation of source-drain wires for etch-stop type insulating gate-type transistor using a photosensitive organic insulating layer and leaving the photosensitive organic insulating layer unchanged on source-drain wires or on the source wire (signal line), or by forming an anodized layer, which is an insulating layer, on source-drain wires.

摘要翻译： 构造了用于TN型液晶显示装置和IPS型液晶装置的四掩模处理和三掩模处理方案，其中通过简化扫描的形成不需要形成钝化绝缘层 线和伪像素元件，两者都包括由透明导电层和金属层制成的层压体，同时通过在该时间去除伪像素电极上的金属层形成透明导电像素电极 通过引入半色调曝光技术，通过使用一个光掩模简化接触的形成过程的处理和保护绝缘层的形成过程，并形成栅极绝缘层中的开口的形成 用于蚀刻停止型绝缘栅型晶体管的源极 - 漏极导线，其使用光敏有机绝缘层并留下感光有机绝缘层 源极 - 漏极导线或源极线（信号线）上不变，或者在源极 - 漏极导线上形成作为绝缘层的阳极氧化层。

公开(公告)号：US20050157236A1

公开(公告)日：2005-07-21

申请号：US10950605

申请日：2004-09-28

申请人： Kiyohiro Kawasaki

发明人： Kiyohiro Kawasaki

IPC分类号： G02F1/1368 ,  G02F1/1362 ,  G09F9/30 ,  H01L21/336 ,  H01L21/768 ,  H01L29/786 ,  G02F1/1343

CPC分类号： G02F1/1362 ,  G02F2001/136231 ,  G02F2001/136236

摘要： When the channel length is shortened in a conventional manufacturing method with a reduced numbers of processes, the manufacturing margin is decreased, causing a lower yield. A four-mask process and a three-mask process proposal are constructed for a TN type liquid crystal display device made by combining a novel technology for streamlining the signal wire formation process and pixel electrode formation process by adopting a half-tone exposure technology, a novel technology for streamlining the electrode terminal protective layer formation process by adopting a half-tone exposure technology in a publicly known source and drain wiring anodization process, and a novel technology for streamlining the scan line formation process and the semiconductor layer formation process, the scan line formation process and the etch stop layer formation process, and the scan line formation process and the contact formation process.

摘要翻译： 当以常规的制造方法缩短通道长度，工艺数量减少时，制造裕度降低，产率降低。 对于通过采用半色调曝光技术组合用于简化信号线形成处理和像素电极形成过程的新技术制造的TN型液晶显示装置，构造了四掩模处理和三掩模处理方案， 在公知的源极和漏极布线阳极氧化工艺中采用半色调曝光技术来简化电极端子保护层形成工艺的新颖技术，以及用于精简扫描线形成工艺和半导体层形成工艺的新技术，扫描 线形成工艺和蚀刻停止层形成工艺，以及扫描线形成工艺和接触形成工艺。

公开(公告)号：US06239856B1

公开(公告)日：2001-05-29

申请号：US09300426

申请日：1999-04-28

申请人： Hideyuki Imura ,  Kiyohiro Kawasaki

发明人： Hideyuki Imura ,  Kiyohiro Kawasaki

IPC分类号： G02F113

CPC分类号： G02F1/1309 ,  G02F1/136259

摘要： A metal thin film by laser CVD, or an opaque film 30, by micro-jet application of an organic resin containing either one or both of black pigment and dye, is formed on the outer side of a substrate 200 or a substrate 900 at a position corresponding to a light point defect detected in image inspection after panel assembling step or after mounting step, to convert into a black point, and therefore by converting the light point defect into a black point, the yield is enhanced.

摘要翻译： 在基板200或基板900的外侧，在基板200或基板900的外侧形成通过激光CVD的金属薄膜或不透明膜30，通过微射流施加含有黑色颜料和染料中的一种或两种的有机树脂 对应于在面板组装步骤或安装步骤之后的图像检查中检测到的光点缺陷的位置，转换成黑点，因此通过将光点缺陷转换成黑点，产率提高。

公开(公告)号：US5418636A

公开(公告)日：1995-05-23

申请号：US69857

申请日：1993-06-01

申请人： Kiyohiro Kawasaki

发明人： Kiyohiro Kawasaki

IPC分类号： G02F1/1343 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/316 ,  H01L27/12 ,  H01L29/45 ,  H01L29/78 ,  H01L29/786 ,  G02F1/1333

CPC分类号： H01L29/458 ,  G02F1/1362

摘要： A liquid crystal image display device is disclosed of a type comprising a first transparent insulating substrate having a plurality of scanning line, a plurality of signal lines and an insulated-gate transistor for each pixel and a pixel electrode for each pixel, a second transparent insulating substrate having a transparent electroconductive counterelectrode and positioned spaced a predetermined distance from the first substrate to define a chamber therebetween, and a liquid crystal material filled in the chamber. When a drain wiring connecting a drain of the insulated-gate transistor with the associated pixel electrode and each of said signal lines are formed, a connecting layer that connects between the drain wiring and the associated signal line is formed, followed by depositing a metallic layer, containing aluminum as a main component, over the connecting layer. Thereafter, the signal line and the drain wiring are selectively formed, followed by formation of a protective layer for protecting the connecting layer from anodization. After surfaces of the signal line and the drain wiring have been anodized to render them to be insulating, the protective layer is removed to disconnect the signal line from the drain wiring.

摘要翻译： 公开了一种液晶图像显示装置，其包括具有多个扫描线，多个信号线和用于每个像素的多个信号线和绝缘栅晶体管的第一透明绝缘基板和每个像素的像素电极，第二透明绝缘 基板具有透明的导电反电极并且与第一基板间隔开预定距离以在其间限定一个室，以及填充在该室中的液晶材料。 当形成将绝缘栅晶体管的漏极与相关的像素电极和每个所述信号线连接的漏极布线时，形成连接在漏极布线和相关联的信号线之间的连接层，然后沉积金属层 以铝为主要成分，在连接层上。 此后，选择性地形成信号线和漏极布线，然后形成用于保护连接层免受阳极氧化的保护层。 在信号线和漏极布线的表面被阳极氧化以使其绝缘之后，去除保护层以将信号线与漏极布线断开。

公开(公告)号：US08481351B2

公开(公告)日：2013-07-09

申请号：US13139732

申请日：2009-12-16

申请人： Kiyohiro Kawasaki

发明人： Kiyohiro Kawasaki

IPC分类号： H01L21/84

CPC分类号： G02F1/134363 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/13629 ,  G02F2001/136295 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/458 ,  H01L29/4908

摘要： Provided is an active matrix substrate manufacturing method, including the steps of: selectively forming a laminated structure pattern, by forming the laminated structure on a glass substrate (2), by forming a first photosensitive resin pattern (PR) on the laminated structure, and by selectively forming the laminated structure pattern using the first photosensitive resin pattern (PR), the laminated structure including a metal layer (a scanning signal line (11) material), a gate insulative layer (30), and a semiconductor layer (31, 33) (transistor material); fluorinating a surface of the first photosensitive resin pattern (PR) by dry-etching with fluorine gas; applying a coating-type transparent insulative resin (60) onto the glass substrate (2) to fill a space in the laminated structure pattern; and removing the fluorinated first photosensitive resin pattern (PR). This enables to form, in an active matrix substrate manufacturing process, a scanning signal line and a semiconductor layer with a single mask process.

摘要翻译： 本发明提供一种有源矩阵基板的制造方法，其特征在于，包括以下步骤：通过在层叠结构体上形成第一感光性树脂图案（PR），在玻璃基板（2）上形成层叠结构，选择性地形成层叠结构图形， 通过使用第一感光性树脂图案（PR）选择性地形成层叠结构图案，包括金属层（扫描信号线（11）材料），栅极绝缘层（30）和半导体层（31）的层叠结构， 33）（晶体管材料）; 通过用氟气干蚀刻氟化第一感光性树脂图案（PR）的表面; 将涂覆型透明绝缘树脂（60）施加到玻璃基板（2）上以填充层压结构图案中的空间; 并除去氟化的第一感光性树脂图案（PR）。 这使得能够在有源矩阵基板制造工艺中形成具有单个掩模工艺的扫描信号线和半导体层。

公开(公告)号：US20110242464A1

公开(公告)日：2011-10-06

申请号：US13133212

申请日：2009-12-16

申请人： Kiyohiro Kawasaki

发明人： Kiyohiro Kawasaki

IPC分类号： G02F1/1335 ,  H01L29/786 ,  H01L21/336 ,  H01L33/02

CPC分类号： H01L29/4908 ,  G02F1/136213 ,  G02F1/1368 ,  H01L27/124 ,  H01L27/1248 ,  H01L29/458

摘要： According to the insulated gate transistor, a gate electrode (11A) is provided on a main surface of a glass substrate (2); a first part of an insulating layer (gate insulating layer (30) and transparent inorganic insulating layer (60)) is thicker than a second part of the insulating layer (gate insulating layer (30)), the first part being between (i) the gate electrode (11A) and (ii) a source electrode (12) and a drain electrode (21) of the insulated gate transistor, and the second part being between (i) the gate electrode (11A) and (ii) a channel section (31A) of the insulated gate transistor. This makes it possible to reduce parasitic capacitor without deteriorating characteristics of the transistor.

摘要翻译： 根据绝缘栅晶体管，在玻璃基板（2）的主表面上设置栅电极（11A）。 绝缘层（栅极绝缘层（30）和透明无机绝缘层（60））的第一部分比绝缘层（栅极绝缘层（30））的第二部分更厚，第一部分在（i） 栅电极（11A）和（ii）绝缘栅晶体管的源电极（12）和漏电极（21），第二部分位于（i）栅电极（11A）和（ii）沟道 绝缘栅晶体管的部分（31A）。 这使得可以减小寄生电容而不降低晶体管的特性。

公开(公告)号：US20080018820A1

公开(公告)日：2008-01-24

申请号：US11902265

申请日：2007-09-20

申请人： Kiyohiro Kawasaki

发明人： Kiyohiro Kawasaki

IPC分类号： G02F1/1343

CPC分类号： G02F1/136286 ,  G02F1/134363 ,  G02F1/1362 ,  G02F2001/136231 ,  G02F2001/136236 ,  H01L27/124 ,  H01L27/1288

摘要： A four-mask process and a three-mask process proposal are constructed for a TN-type liquid crystal display device and an IPS-type liquid crystal device in which the formation of a passivation insulating layer is not required by streamlining the formation of a scan line and a pseudo-pixel element, both comprising a laminate made of a transparent conductive layer and a metal layer, at the same time and the formation of the transparent conductive pixel electrode by removing the metal layer on the pseudo-pixel electrode at the time of the formation of the opening in the gate insulating layer, by streamlining the treatment of the formation process of the contact and the formation process of the protective insulating layer using one photomask due to the introduction of half-tone exposure technology, and the formation of source-drain wires for etch-stop type insulating gate-type transistor using a photosensitive organic insulating layer and leaving the photosensitive organic insulating layer unchanged on source-drain wires or on the source wire (signal line), or by forming an anodized layer, which is an insulating layer, on source-drain wires.

公开(公告)号：US07292288B2

公开(公告)日：2007-11-06

申请号：US10963800

申请日：2004-10-14

申请人： Kiyohiro Kawasaki

发明人： Kiyohiro Kawasaki

IPC分类号： G02F1/136

CPC分类号： G02F1/136286 ,  G02F1/134363 ,  G02F1/1362 ,  G02F2001/136231 ,  G02F2001/136236 ,  H01L27/124 ,  H01L27/1288

摘要： A four-mask process and a three-mask process proposal are constructed for a TN-type liquid crystal display device and an IPS-type liquid crystal device in which the formation of a passivation insulating layer is not required by streamlining the formation of a scan line and a pseudo-pixel element, both comprising a laminate made of a transparent conductive layer and a metal layer, at the same time and the formation of the transparent conductive pixel electrode by removing the metal layer on the pseudo-pixel electrode at the time of the formation of the opening in the gate insulating layer, by streamlining the treatment of the formation process of the contact and the formation process of the protective insulating layer using one photomask due to the introduction of half-tone exposure technology, and the formation of source-drain wires for etch-stop type insulating gate-type transistor using a photosensitive organic insulating layer and leaving the photosensitive organic insulating layer unchanged on source-drain wires or on the source wire (signal line), or by forming an anodized layer, which is an insulating layer, on source-drain wires.

摘要翻译： 构造了用于TN型液晶显示装置和IPS型液晶装置的四掩模处理和三掩模处理方案，其中通过简化扫描的形成不需要形成钝化绝缘层 线和伪像素元件，两者都包括由透明导电层和金属层制成的层压体，同时通过在该时间去除伪像素电极上的金属层形成透明导电像素电极 通过引入半色调曝光技术，通过使用一个光掩模简化接触的形成过程的处理和保护绝缘层的形成过程，并形成栅极绝缘层中的开口的形成 用于蚀刻停止型绝缘栅型晶体管的源极 - 漏极导线，其使用光敏有机绝缘层并留下感光有机绝缘层 源极 - 漏极导线或源极线（信号线）上不变，或者在源极 - 漏极导线上形成作为绝缘层的阳极氧化层。