摘要:
It is an object of the present invention to provide a light emitting element which can be driven at a low voltage. Other objects of the present invention are to provide a light emitting element with a high luminescent efficiency; a light emitting element with a high luminance; a light emitting element having long-life luminescence; a light emitting element and an electronic device having reduced power consumption; and a light emitting element and an electronic device which can be manufactured at low cost. The light emitting element has a light emitting layer and a barrier layer between a first electrode and a second electrode, the light emitting layer contains a base material and an impurity element, and the barrier layer is provided so as to be in contact with the first electrode. Light emission is obtained when a voltage is applied such that a potential of the second electrode becomes higher than a potential of the first electrode.
摘要:
An object is to provide a novel light emitting material. Another object is to provide a light emitting device and an electronic device with reduced power consumption. Still another object is to provide a light emitting device and an electronic device which can be manufactured at low cost. Provided is a light emitting element including a base material, a first impurity element, a second impurity element, and a third impurity element. The base material is one of ZnS, CdS, CaS, Y2S3, Ga2S3, SrS, BaS, ZnO, Y2O3, AlN, GaN, InN, ZnSe, ZnTe, and SrGa2S4; the first impurity element is any of Cu, Ag, Au, Pt, and Si; the second impurity element is any of F, Cl, Br, I, B, Al, Ga, In, and Tl; and the third impurity element is any of Li, Na, K, Rb, Cs, N, P, As, Sb, and Bi.
摘要翻译:目的是提供一种新颖的发光材料。 另一个目的是提供一种降低功耗的发光器件和电子器件。 另一个目的是提供一种可以以低成本制造的发光器件和电子器件。 提供了包括基材,第一杂质元素,第二杂质元素和第三杂质元素的发光元件。 基材是ZnS,CdS,CaS,Y 2 S 3,Ga 2 S 3, SrS,BaS,ZnO,Y 2 O 3,AlN,GaN,InN,ZnSe,ZnTe和SrGa 2 S 4 SUB> 第一杂质元素是Cu,Ag,Au,Pt和Si中的任一种; 第二杂质元素是F,Cl,Br,I,B,Al,Ga,In和Tl中的任一种; 并且第三杂质元素是Li,Na,K,Rb,Cs,N,P,As,Sb和Bi中的任一种。
摘要:
A light emitting element is provided, which comprises a pair of electrodes, a p-type semiconductor layer, and an n-type semiconductor layer. The p-type semiconductor layer and the n-type semiconductor layer are interposed between the pair of electrodes. The p-type semiconductor layer includes a first sulfide, and the n-type semiconductor layer includes a second sulfide. At least one of the p-type semiconductor layer and the n-type semiconductor layer includes a light emitting center.
摘要:
An object of the present invention is to provide a film forming method for forming a film with reduced defect and to provide a film forming method for forming a film with a uniform quality. In addition, another object is to provide a manufacturing method of a light emitting element which can be driven with low voltage. Further, another object is to provide a manufacturing method of a light emitting element with high light emission efficiency. A film with reduced defect and a uniform quality can be formed by fixing a substrate to a substrate holding unit so that at least a part of a surface of the substrate is exposed, evaporating a vapor deposition material from an evaporation source filled with the vapor deposition material, irradiating the vapor deposition material which is evaporated with a laser beam, and depositing the vapor deposition material on the surface of the substrate.
摘要:
To provide a light-emitting material made of an inorganic compound, which exhibits higher luminance than the conventional material, due to its crystal structure. The light-emitting material includes a host material and an impurity element which serves as a luminescence center. The main crystal structure of the light-emitting material is hexagonal. The host material is a compound of a Group 2 element and a Group 16 element, or a compound of a Group 12 element and a Group 16 element. The impurity element includes at least one of manganese (Mn), samarium (Sm), terbium (Tb), erbium (Er), thulium (Tm), europium (Eu), cerium (Ce), and praseodymium (Pr).
摘要:
It is an object to provide a light emitting element capable of low-voltage driving; with high luminous efficiency; with high emission luminance; and with long emission lifetime. It is another object to provide a light emitting device and an electronic appliance in which power consumption is reduced; and which can be manufactured at low cost. A light emitting element is provided, including a light emitting layer and a layer including a composite material between a first electrode and a second electrode, where the light emitting layer includes a base material and an impurity element, the layer including the composite material includes an organic compound and an inorganic compound, the layer including the composite material is provided to be in contact with the second electrode, and light emission is obtained by application of a voltage so that an electric potential of the second electrode is higher than that of the first electrode.
摘要:
It is an object of the present invention to provide a light-emitting material with high light emission intensity. It is another object to provide a light-emitting element with high light emission efficiency. Moreover, it is another object to provide a light-emitting device and an electronic appliance with reduced power consumption. A light-emitting material contains at least a light-emitting substance, a base material, and an additive which is an element belonging to group 14 of the periodic table or a compound containing two or more kinds of elements belonging to group 14, or a compound containing at least two or more kinds of elements each belonging to a different group chosen from group 13, group 14, and group 15. Due to the light-emitting material, a light-emitting element and an electronic appliance which has high light emission efficiency and can be driven at a low voltage can be obtained.
摘要:
A light emitting element that can be driven at a low voltage is provided. Further, a light emitting device and an electronic device with reduced power consumption are provided. A light emitting element is provided that includes a substrate 100, and a first electrode 101, a first insulating layer 102, a light emitting layer 103, a second insulating layer 104, and a second electrode 105, which are over the substrate 100. The light emitting layer 103 includes a compound ABC2, referred to as a ‘chalcopyrite’ (wherein A is Cu or Ag, B is Al, Ga, or In, and C is S, Se, or Te). By employing such a structure, a light emitting element that can be driven at a low voltage can be provided.
摘要:
To provide an evaporation donor substrate which is used for deposition by an evaporation method and which allows reduction in manufacturing cost and high uniformity of a film which is deposited. In addition, to provide a method for manufacturing a light-emitting device using the evaporation donor substrate. The evaporation donor substrate includes a reflective layer having an opening which is formed over a substrate, a heat insulating layer having a light-transmitting property which is formed over the substrate and the reflective layer, a light absorption layer which is formed over the heat insulating layer; and a material layer which is formed over the light absorption layer.
摘要:
A lighting device is formed using a light-emitting element by a more simplified method. The lighting device includes a light-emitting element including a light-emitting layer between a first electrode and a second electrode, a substrate provided with the light-emitting element and an uneven region around the periphery of the light-emitting element, a sealing substrate facing the substrate, connection electrodes connected to the first electrode and the second electrode and formed over the uneven region, and a sealant for bonding the substrate and the sealing substrate. The connection electrodes are each formed using a conductive paste, and the sealant is in contact with the connection electrodes and the uneven region provided around the periphery of the light-emitting element.