摘要:
A polishing apparatus that can effectively and efficiently remove potassium and other alkaline metals comprises integrally a polishing unit for polishing an object by means of a polishing agent and a cleaning unit for cleaning the polished object. The polishing unit and the cleaning unit have means for isolating the internal atmosphere from the external atmosphere and the cleaning unit has a means for cleaning the polished object by bringing hot pure water or steam of pure water into contact with the polished object. With a cleaning method hot pure water is brought into contact with the polished object without drying it after having been polished by such a polishing apparatus.
摘要:
A polishing apparatus that can effectively and efficiently remove potassium and other alkaline metals comprises integrally a polishing unit for polishing an object by means of a polishing agent and a cleaning unit for cleaning the polished object. The polishing unit and the cleaning unit have means for isolating the internal atmosphere from the external atmosphere and the cleaning unit has a means for cleaning the polished object by bringing hot pure water or steam of pure water into contact with the polished object. With a cleaning method hot pure water is brought into contact with the polished object without drying it after having been polished by such a polishing apparatus.
摘要:
In order to reclaim defective articles, wafers carried in from a loading unit are transported to a wafer stocker unit, a polishing unit, a pre-rinsing unit, a rinsing unit, a spin dehydrating unit and a drying unit in the named order, and in a defect inspecting device, defective articles are sorted and the remainder are taken out of an unloading unit as products. The defective articles are classified in a discriminating device in conformity with the kinds of defects and are returned to the polishing unit, the rinsing unit or the drying unit through a return duct.
摘要:
A precision polishing apparatus has a first hermetically sealed chamber provided with polishing means, a third hermetically sealed chamber capable of communicating with the first hermetically sealed chamber through a second hermetically sealed chamber, first and second opening-closing means for alternately placing the first and the third hermetically sealed chamber in communication with with the second hermetically sealed chamber, and atmosphere pressure control means for controlling the atmosphere pressure of the first and the second hermetically sealed chamber so that the atmosphere pressure of the first hermetically sealed chamber may become lower than the atmosphere pressure of the second hermetically sealed chamber when at least the first opening-closing means is opened.
摘要:
A precision polishing apparatus has a first hermetically sealed chamber provided with polishing means, a third hermetically sealed chamber capable of communicating with the first hermetically sealed chamber through a second hermetically sealed chamber, first and second opening-closing means for alternately placing the first and the third hermetically sealed chamber in communication with the second hermetically sealed chamber, and atmosphere pressure control means for controlling the atmosphere pressure of the first and the second hermetically sealed chamber so that the atmosphere pressure of the first hermetically sealed chamber may become lower than the atmosphere pressure of the second hermetically sealed chamber when at least the first opening-closing means is opened.
摘要:
The present invention provides a precise polishing apparatus and method in which a polished body is polished by rotating a polishing pad having a diameter greater than that of the polished body while urging the polishing pad against the polished body in conditions that a center of the polished body is deviated from a rotation axis of the polishing pad and that the polishing pad is contacted with the entire polished surface of the polished body. The polished body may be a semi-conductor wafer.
摘要:
The present invention provides a precise polishing apparatus and method in which a polished body is polished by rotating a polishing pad having a diameter greater than that of the polished body while urging the polishing pad against the polished body in conditions that a center of the polished body is deviated from a rotation axis of the polishing pad and that the polishing pad is contacted with the entire polished surface of the polished body. The polished body may be a semi-conductor wafer.
摘要:
In order to reclaim defective articles, wafers carried in from a loading unit are transported to a wafer stocker unit, a polishing unit, a pre-rinsing unit, a rinsing unit, a spin dehydrating unit and a drying unit in the named order, and in a defect inspecting device, defective articles are sorted and the remainder are taken out as products out of an unloading unit. The defective articles are classified in a discriminating device in conformity with the kinds of the defects thereof, and are returned to the polishing unit, the rinsing unit or the drying unit through a return duct.
摘要:
A polishing method of polishing the surface of a layer provided on the surface of a substrate includes a surface configuration measuring step of detecting surface information at a plurality of locations on the layer and obtaining the surface configuration of the layer, the surface configuration of the layer being obtained by measuring a distance from a reference surface set relative to the surface of the layer, a film thickness distribution measuring step of detecting the film thicknesses at a plurality of locations on the layer and obtaining the film thickness distribution of the layer, a determining step of determining whether the surface configuration and film thickness distribution of the layer are within a preset allowable range and a polishing controlling step of continuing or stopping the polishing on the basis of a result of the determination in the determining step.
摘要:
This specification discloses a polishing method of polishing the surface of a film layer provided on the surface of a substrate by polishing means with both of them driven relative to each other, having a position detecting step of detecting a predetermined position on the surface of the film layer, a first measuring step of applying momentary light from a light source to the predetermined position, and detecting the light beam from the predetermined position by a light receiving element to thereby measure the film thickness at the predetermined position, and a controlling step of controlling the polishing state by using data obtained in the first measuring step. The specification also discloses a polishing apparatus using such polishing method.