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公开(公告)号：US07105075B2
公开(公告)日：2006-09-12
申请号：US10884027
申请日：2004-07-02
CPC分类号： H01J37/3405 , H01J37/32027 , H01J37/3299 , H05H1/46
摘要： There is provided by this invention an apparatus and method for controlling a dc magnetron plasma processing system that automatically adjusts the control signal to the power supply based upon the dynamic impedance of the load to control the output power to the plasma. The output voltage and the output current of the power supply that supplies power to the plasma is sampled over at a sampling frequency at least four to five times higher than the switching frequency and the dynamic impedance of the plasma is calculated based upon the sampled voltage and current from the algorithm R plasma = Δ V n Δ I n wherein ΔVn and ΔIn is the maximum difference among samples on one switching cycle. If the dynamic impedance seen is negative in nature then the control signal is compensated accordingly.
摘要翻译： 本发明提供一种用于控制直流磁控管等离子体处理系统的装置和方法，该系统基于负载的动态阻抗自动调节对电源的控制信号，以控制等离子体的输出功率。 向等离子体供电的电源的输出电压和输出电流以比开关频率高至少四至五倍的采样频率被采样，并且基于采样电压来计算等离子体的动态阻抗， 来自算法的电流
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公开(公告)号：US20120171390A1
公开(公告)日：2012-07-05
申请号：US13417937
申请日：2012-03-12
申请人： Ken Nauman , Hendrik V. Walde , David J. Christie , Bruce Fries
发明人： Ken Nauman , Hendrik V. Walde , David J. Christie , Bruce Fries
IPC分类号： C23C14/34
CPC分类号： C23C14/564 , C23C14/3485 , C23C14/3492 , C23C14/54 , C23C14/542 , C23C14/548
摘要： An apparatus and methods for plasma-based sputtering deposition using a direct current power supply is disclosed. In one embodiment, a plasma is generated by connecting a plurality of electrodes to a supply of current, and a polarity of voltage applied to each of a plurality of electrodes in the processing chamber is periodically reversed so that at least one of the electrodes sputters material on to the substrate. And an amount of power that is applied to at least one of the plurality of electrodes is modulated so as to deposit the material on the stationary substrate with a desired characteristic. In some embodiments, the substrate is statically disposed in the chamber during processing. And many embodiments utilize feedback indicative of the state of the deposition to modulate the amount of power applied to one or more electrodes.
摘要翻译： 公开了一种使用直流电源进行等离子体溅射沉积的设备和方法。 在一个实施例中，通过将多个电极连接到电流源来产生等离子体，并且施加到处理室中的多个电极中的每一个的电压的极性被周期性地反转，使得至少一个电极将物质 到基板上。 并且施加到多个电极中的至少一个电极的功率的量被调制以便以期望的特性将材料沉积在固定衬底上。 在一些实施例中，衬底在处理期间被静态地设置在腔室中。 并且许多实施例利用表示沉积状态的反馈来调制施加到一个或多个电极的功率量。
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公开(公告)号：US20090127101A1
公开(公告)日：2009-05-21
申请号：US11941548
申请日：2007-11-16
申请人： Ken Nauman , Hendrik V. Walde , David J. Christie , Bruce Fries
发明人： Ken Nauman , Hendrik V. Walde , David J. Christie , Bruce Fries
CPC分类号： C23C14/564 , C23C14/3485 , C23C14/3492 , C23C14/54 , C23C14/542 , C23C14/548
摘要： An apparatus and methods for plasma-based sputtering deposition using a direct current power supply is disclosed. In one embodiment, a plasma is generated by connecting a plurality of electrodes to a supply of current, and a polarity of voltage applied to each of a plurality of electrodes in the processing chamber is periodically reversed so that at least one of the electrodes sputters material on to the substrate. And an amount of power that is applied to at least one of the plurality of electrodes is modulated so as to deposit the material on the stationary substrate with a desired characteristic. In some embodiments, the substrate is statically disposed in the chamber during processing. And many embodiments utilize feedback indicative of the state of the deposition to modulate the amount of power applied to one or more electrodes.
摘要翻译： 公开了一种使用直流电源进行等离子体溅射沉积的装置和方法。 在一个实施例中，通过将多个电极连接到电流源来产生等离子体，并且施加到处理室中的多个电极中的每一个的电压的极性被周期性地反转，使得至少一个电极将物质 到基板上。 并且施加到多个电极中的至少一个电极的功率的量被调制以便以期望的特性将材料沉积在固定衬底上。 在一些实施例中，衬底在处理期间被静态地设置在腔室中。 并且许多实施例利用表示沉积状态的反馈来调制施加到一个或多个电极的功率量。
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公开(公告)号：US09150960B2
公开(公告)日：2015-10-06
申请号：US13417937
申请日：2012-03-12
申请人： Ken Nauman , Hendrik V. Walde , David J. Christie , Bruce Fries
发明人： Ken Nauman , Hendrik V. Walde , David J. Christie , Bruce Fries
CPC分类号： C23C14/564 , C23C14/3485 , C23C14/3492 , C23C14/54 , C23C14/542 , C23C14/548
摘要： An apparatus and methods for plasma-based sputtering deposition using a direct current power supply is disclosed. In one embodiment, a plasma is generated by connecting a plurality of electrodes to a supply of current, and a polarity of voltage applied to each of a plurality of electrodes in the processing chamber is periodically reversed so that at least one of the electrodes sputters material on to the substrate. And an amount of power that is applied to at least one of the plurality of electrodes is modulated so as to deposit the material on the stationary substrate with a desired characteristic. In some embodiments, the substrate is statically disposed in the chamber during processing. And many embodiments utilize feedback indicative of the state of the deposition to modulate the amount of power applied to one or more electrodes.
摘要翻译： 公开了一种使用直流电源进行等离子体溅射沉积的装置和方法。 在一个实施例中，通过将多个电极连接到电流源来产生等离子体，并且施加到处理室中的多个电极中的每一个的电压的极性被周期性地反转，使得至少一个电极将物质 到基板上。 并且施加到多个电极中的至少一个电极的功率的量被调制以便以期望的特性将材料沉积在固定衬底上。 在一些实施例中，衬底在处理期间被静态地设置在腔室中。 并且许多实施例利用表示沉积状态的反馈来调制施加到一个或多个电极的功率量。
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公开(公告)号：US08133359B2
公开(公告)日：2012-03-13
申请号：US11941548
申请日：2007-11-16
申请人： Ken Nauman , Hendrik V. Walde , David J. Christie , Bruce Fries
发明人： Ken Nauman , Hendrik V. Walde , David J. Christie , Bruce Fries
IPC分类号： C23C14/34
CPC分类号： C23C14/564 , C23C14/3485 , C23C14/3492 , C23C14/54 , C23C14/542 , C23C14/548
摘要： An apparatus and methods for plasma-based sputtering deposition using a direct current power supply is disclosed. In one embodiment, a plasma is generated by connecting a plurality of electrodes to a supply of current, and a polarity of voltage applied to each of a plurality of electrodes in the processing chamber is periodically reversed so that at least one of the electrodes sputters material on to the substrate. And an amount of power that is applied to at least one of the plurality of electrodes is modulated so as to deposit the material on the stationary substrate with a desired characteristic. In some embodiments, the substrate is statically disposed in the chamber during processing. And many embodiments utilize feedback indicative of the state of the deposition to modulate the amount of power applied to one or more electrodes.
摘要翻译： 公开了一种使用直流电源进行等离子体溅射沉积的装置和方法。 在一个实施例中，通过将多个电极连接到电流源来产生等离子体，并且施加到处理室中的多个电极中的每一个的电压的极性被周期性地反转，使得至少一个电极将物质 到基板上。 并且施加到多个电极中的至少一个电极的功率的量被调制以便以期望的特性将材料沉积在固定衬底上。 在一些实施例中，衬底在处理期间被静态地设置在腔室中。 并且许多实施例利用表示沉积状态的反馈来调制施加到一个或多个电极的功率量。
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6.发明授权
公开(公告)号：US5917286A
公开(公告)日：1999-06-29
申请号：US646616
申请日：1996-05-08
CPC分类号： H01J37/32045 , H05H1/46
摘要： Various embodiments of a power supply are disclosed for generating plasmas. Current controlled power sources are disclosed that are capable of generating currents in low resistance, high temperature plasmas that are regulated to prevent the generation of excessive currents in the plasma. Current reversing switches are provided that control the flow of a direct current in a plasma chamber between various electrodes. A single current controlled power source capable of providing a substantially constant direct current can be utilized with various switch configurations to provide current that is delivered through three or more electrodes in a plasma chamber. Multiple power sources are also provided in association with shunt switches for delivering a plurality of sources of direct current in various directions between electrodes in a plasma chamber. In another embodiment of the present invention, inductive impedance can be provided in switch paths to cause a source of direct current to flow through a plasma chamber in various directions between electrodes. The use of multiple electrodes in association with a single voltage controlled power source is also disclosed.
摘要翻译： 公开了用于产生等离子体的电源的各种实施例。 公开了能够在低电阻，高温等离子体中产生电流的电流控制电源，其被调节以防止在等离子体中产生过大的电流。 提供了电流反转开关，其控制各种电极之间的等离子体室中的直流电流。 可以使用能够提供基本上恒定的直流电流的单个电流控制电源，具有各种开关配置，以提供通过等离子体室中的三个或更多个电极传送的电流。 与分流开关相关联地提供多个电源，用于在等离子体室中的电极之间的各个方向上传送多个直流电源。 在本发明的另一个实施例中，可以在开关路径中提供电感阻抗，以使直流电源在电极之间的各个方向上流过等离子体室。 还公开了与单个电压控制电源相关联的多个电极的使用。
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公开(公告)号：US06808607B2
公开(公告)日：2004-10-26
申请号：US10254158
申请日：2002-09-25
申请人： David J. Christie
发明人： David J. Christie
IPC分类号： C23C1434
CPC分类号： H01J37/3444 , C23C14/35 , H01J37/34 , H01J37/3405
摘要： There is provided by this invention novel magnetron sputtering apparatus that is generally comprised of a pulsed dc power supply capable of delivering peak powers of 0.1 megaWatts to several megaWatts with a peak power density greater than 1 kW/cm2. The power supply has a pulsing circuit comprised of an energy storage capacitor and serially connected inductor with a switching means for disconnecting the pulsing circuit from the plasma and recycling the inductor energy back to the energy storage capacitor at the detection of an arc condition. The energy storage capacitor and the serially connected inductor provide an impedance match to the plasma, limits the current rate of rise and peak magnitude in the event of an arc, and shapes the voltage pulses to the plasma.
摘要翻译： 本发明提供了一种新颖的磁控管溅射装置，其通常包括能够以峰值功率密度大于1kW / cm 2将0.1兆瓦的峰值功率输送到几兆瓦的脉冲直流电源。 电源具有由能量存储电容器和串联电感器组成的脉冲电路，该电感器具有用于将脉冲电路与等离子体断开连接的开关装置，并且在检测到电弧状态时将电感器能量再循环回储能电容器。 储能电容器和串联连接的电感器提供与等离子体的阻抗匹配，限制了电弧时的电流上升速率和峰值幅值，并将电压脉冲形成等离子体。
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公开(公告)号：US06532161B2
公开(公告)日：2003-03-11
申请号：US09890814
申请日：2001-11-13
IPC分类号： H02M7122
CPC分类号： H02M1/40 , H01F27/402 , H01F30/06 , H01F2019/085 , H01J37/3405 , H01J37/3444 , H02M7/48
摘要： There is provided by this invention an apparatus and method for generating voltage pulses to first and second magnetron devices in a plasma chamber. An isolation transformer is connected to a pulsed DC power supply having a flux sensor, such as a Hall effect sensor, in close proximity to its air gap to monitor the transformer flux. A control circuit is connected to the flux sensor to control the duty cycle of the transformer by controlling the flux of the transformer such that the maximum and minimum peak transformer fluxes are equal in magnitude and opposite in sign to prevent saturation.
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9.发明授权公开(公告)号：US06222321B1
公开(公告)日：2001-04-24
申请号：US09328175
申请日：1999-06-08
IPC分类号： H05H148
CPC分类号： H01J37/32045 , H05H1/46
摘要： Current controlled power sources are disclosed that are capable of generating currents in low resistance, high temperature plasmas that are regulated to prevent the generation of excessive currents in the plasma. Current reversing switches are provided that control the flow of a direct current in a plasma chamber between various electrodes. Multiple power sources are provided in association with shunt switches for delivering a plurality of sources of direct current in various directions between electrodes in a plasma chamber. Inductive impedance can be provided in switch paths to cause a source of direct current to flow through a plasma chamber in various directions between electrodes.
摘要翻译： 公开了能够在低电阻，高温等离子体中产生电流的电流控制电源，其被调节以防止在等离子体中产生过大的电流。 提供了电流反转开关，其控制各种电极之间的等离子体室中的直流电流。 与分流开关相关联地提供多个电源，用于在等离子体室中的电极之间的各个方向上传送多个直流电源。 可以在开关路径中提供感应阻抗，以使直流电源在电极之间的各个方向上流过等离子体室。
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公开(公告)号：US5049836A
公开(公告)日：1991-09-17
申请号：US447454
申请日：1989-12-07
CPC分类号： H03F3/2178 , H03F3/211 , H03F3/2171 , H03F3/50 , H03F2200/387 , H03F2200/541
摘要： A circuit, comprising an amplifier and a transformer is disclosed that produces a high power pulse having a fast response time, and that responds to a digital control signal applied through a digital-to-analog converter. The present invention is suitable for driving a component such as an electro-optic modulator with a voltage in the kilovolt range. The circuit is stable at high frequencies and during pulse transients, and its impedance matching circuit matches the load impedance with the output impedance. The preferred embodiment comprises an input stage compatible with high-speed semiconductor components for amplifying the voltage of the input control signal, a buffer for isolating the input stage from the output stage; and a plurality of current amplifiers connected to the buffer. Each current amplifier is connected to a field effect transistor (FET), which switches a high voltage power supply to a transformer which then provides an output terminal for driving a load. The transformer comprises a plurality of transmission lines connected to the FETs and the load. The transformer changes the impedance and voltage of the output. The preferred embodiment also comprises a low voltage power supply for biasing the FETs at or near an operational voltage.
摘要翻译： 公开了一种包括放大器和变压器的电路，其产生具有快速响应时间的高功率脉冲，并响应通过数模转换器施加的数字控制信号。 本发明适用于驱动具有千伏范围内电压的电光调制器等元件。 该电路在高频和脉冲瞬变期间是稳定的，其阻抗匹配电路与负载阻抗与输出阻抗匹配。 优选实施例包括与用于放大输入控制信号的电压的高速半导体部件兼容的输入级，用于将输入级与输出级隔离的缓冲器; 以及连接到缓冲器的多个电流放大器。 每个电流放大器连接到场效应晶体管（FET），其将高压电源切换到变压器，变压器然后提供用于驱动负载的输出端子。 变压器包括连接到FET和负载的多个传输线。 变压器改变输出的阻抗和电压。 优选实施例还包括用于在操作电压处或其附近偏置FET的低电压电源。
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