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19 条记录 (耗时 0.035 秒)

    Organosilicate polymer and insulating film therefrom
    4.
    发明授权
    Organosilicate polymer and insulating film therefrom 有权
    有机硅酸酯聚合物及其绝缘膜

    公开(公告)号：US06933360B2

    公开(公告)日：2005-08-23

    申请号：US10332452

    申请日：2002-05-13

    申请人： Min-Jin Ko ,  Bum-Gyu Choi ,  Dong-Seok Shin ,  Myung-Sun Moon ,  Jung-Won Kang ,  Hae-Young Nam ,  Young-Duk Kim ,  Gwi-Gwon Kang

    发明人： Min-Jin Ko ,  Bum-Gyu Choi ,  Dong-Seok Shin ,  Myung-Sun Moon ,  Jung-Won Kang ,  Hae-Young Nam ,  Young-Duk Kim ,  Gwi-Gwon Kang

    IPC分类号： C08G77/50 ,  C08G77/02 ,  H01B3/46 ,  H01L21/312 ,  H01L21/768 ,  H01L23/522 ,  C08G77/22

    CPC分类号： H01L21/02126 ,  C08G77/50 ,  C09D183/14 ,  H01L21/02282 ,  H01L21/3121

    摘要： The present invention relates to a low dielectric substance essential for a next generating electrical device such as a semiconductor device having high performance and high density, and particularly to a process for preparing a low dielectric organosilicate polymer, a hydrolysis condensation product of a carbon-bridged oligomer; a process for manufacturing an insulating film using an organosilicate polymer prepared by the process; and an electrical device comprising an insulating film prepared by the process. The organosilicate polymer prepared according the process of the present invention is thermally stable, and has good film-forming prosperities, excellent mechanical strength and crack resistance, and the film manufactured therefrom has excellent insulating properties, film uniformity, dielectric properties, crack resistance, and mechanical strength.

    摘要翻译： 本发明涉及对具有高性能和高密度的诸如半导体器件的下一个发电装置所必需的低电介质，特别涉及制备低介电有机硅酸盐聚合物的方法，碳桥接的水解缩合产物 低聚物 使用由该方法制备的有机硅酸酯聚合物制造绝缘膜的方法; 以及包括通过该方法制备的绝缘膜的电气装置。 根据本发明的方法制备的有机硅酸盐聚合物是热稳定的，并且具有良好的成膜繁荣性，优异的机械强度和抗裂性，并且由其制造的膜具有优异的绝缘性，膜均匀性，介电性能，抗裂纹性和 机械强度。

    Organic silicate polymer and insulation film comprising the same
    7.
    发明申请
    Organic silicate polymer and insulation film comprising the same 审中-公开
    有机硅酸盐聚合物和包含其的绝缘膜

    公开(公告)号：US20060127587A1

    公开(公告)日：2006-06-15

    申请号：US10516494

    申请日：2003-06-27

    申请人： Jung-won Kang ,  Myung-Sun Moon ,  Min-Jin Ko ,  Gwi-Gwon Kang ,  Dong-Seok Shin ,  Hye-Yeong Nam ,  Young-Duk Kim ,  Bum-Gyu Choi ,  Byung-Ro Kim ,  Sang-Min Park

    发明人： Jung-won Kang ,  Myung-Sun Moon ,  Min-Jin Ko ,  Gwi-Gwon Kang ,  Dong-Seok Shin ,  Hye-Yeong Nam ,  Young-Duk Kim ,  Bum-Gyu Choi ,  Byung-Ro Kim ,  Sang-Min Park

    IPC分类号： B05D3/02 ,  C08G77/60 ,  C07F7/18

    CPC分类号： H01L21/3121 ,  C08G77/48 ,  C09D183/14 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/31695 ,  H01L23/5222 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

    摘要： The present invention relates to a composition for forming a low dielectric insulating film for a semiconductor device, particularly to an organosilicate polymer prepared by mixing a thermally decomposable organic silane compound that is capped with a silane compound at both its ends, and a common silane compound or silane oligomer, and then adding water and a catalyst to conduct hydrolysis and condensation, as well as to a coating composition for an insulating film for a semiconductor device comprising the same, a coating composition for an insulating film for a semiconductor device further comprising a pore-forming organic substance, a method for preparing an insulating film for a semiconductor device by coating the composition and curing, and a semiconductor device comprising a low dielectric insulating film prepared by the method. The organosilicate polymer prepared according to the present invention has superior thermal stability and mechanical strength; an insulating film-forming composition comprising the same can be used for an interlayer insulating film for low dielectric wiring that can contribute to a high speed semiconductor, reduce power consumption, and remarkably decrease cross-talk between metal wiring; and a film obtained by applying the composition to an insulating film has superior coating properties, inhibits phase-separation, can easily control minute pores because organic substances are thermally decomposed to form pores during a curing process, and has superior insulating properties and a remarkably decreased film density.

    摘要翻译： 本发明涉及一种用于形成用于半导体器件的低介电绝缘膜的组合物，特别涉及通过将两端封装有硅烷化合物的可热分解有机硅烷化合物和普通硅烷化合物混合而制备的有机硅酸盐聚合物 或硅烷低聚物，然后加入水和催化剂进行水解和缩合，以及用于包含该组合物的半导体器件的绝缘膜用涂料组合物，用于半导体器件的绝缘膜用涂料组合物，还包含 成孔有机物质，通过涂布组合物和固化来制备用于半导体器件的绝缘膜的方法，以及包括通过该方法制备的低介电绝缘膜的半导体器件。 根据本发明制备的有机硅酸盐聚合物具有优异的热稳定性和机械强度; 可以使用包含该绝缘膜的绝缘膜形成用组合物用于低电介质布线的层间绝缘膜，其可有助于高速半导体，降低功耗，并显着降低金属布线之间的串扰; 并且通过将该组合物施加到绝缘膜上获得的膜具有优异的涂布性能，抑制相分离，可以容易地控制微孔，因为有机物质在固化过程中被热分解形成孔隙，并且具有优异的绝缘性能并显着降低 胶片密度。