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    DRAM DEVICES
    6.
    发明申请
    DRAM DEVICES 审中-公开
    DRAM设备

    公开(公告)号：US20110006353A1

    公开(公告)日：2011-01-13

    申请号：US12830788

    申请日：2010-07-06

    申请人： Min-Sang KIM ,  Dong-Won Kim ,  Jun Seo ,  Keun-Hwi Cho ,  Hyun-Jun Bae ,  Ji-Myoung Lee

    发明人： Min-Sang KIM ,  Dong-Won Kim ,  Jun Seo ,  Keun-Hwi Cho ,  Hyun-Jun Bae ,  Ji-Myoung Lee

    IPC分类号： H01L27/108

    CPC分类号： H01L27/10894 ,  H01L27/10814 ,  H01L27/10852 ,  H01L27/10855 ,  H01L28/60

    摘要： A DRAM device includes a plug on a substrate, a conductive plate electrically connected to the plug and overlapping the substrate, at least one capacitor on the substrate and spaced apart from the plug, and at least one word line under the conductive plate and spaced apart from the conductive plate. The DRAM device further includes at least one first conductive pad under the conductive plate, the at least one first conductive pad being spaced apart from the conductive plate in a first state and being electrically connected to the conductive plate in a second state, the at least one first conductive pad being disposed between the plug and an adjacent word line of the at least one word line, and the at least one first conductive pad being electrically connected to a respective capacitor of the at least one capacitor.

    摘要翻译： DRAM装置包括在基板上的插头，电连接到插头并与衬底重叠的导电板，基板上的至少一个电容器和与插头间隔开的至少一个电容器，以及导电板下面的至少一个字线并间隔开 从导电板。 DRAM器件还包括在导电板下方的至少一个第一导电焊盘，所述至少一个第一导电焊盘在第一状态下与导电板间隔开并且在第二状态下电连接到导电板，至少 一个第一导电焊盘设置在所述插头和所述至少一个字线的相邻字线之间，并且所述至少一个第一导电焊盘电连接到所述至少一个电容器的相应电容器。