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    MEMORY ARRAY USING MECHANICAL SWITCH AND METHOD FOR OPERATING THEREOF
    3.
    发明申请
    MEMORY ARRAY USING MECHANICAL SWITCH AND METHOD FOR OPERATING THEREOF 有权
    使用机械开关的存储器阵列及其操作方法

    公开(公告)号：US20090021972A1

    公开(公告)日：2009-01-22

    申请号：US12122318

    申请日：2008-05-16

    申请人： Jun-Bo Yoon ,  Jeong-Oen Lee ,  Weon-Wi Jang

    发明人： Jun-Bo Yoon ,  Jeong-Oen Lee ,  Weon-Wi Jang

    IPC分类号： G11C5/00 ,  G11C11/24 ,  G11C7/00

    CPC分类号： G11C23/00 ,  G11C11/565

    摘要： A method for controlling a memory array using a mechanical switch according to the present invention, in which the memory array comprises; a plurality of word lines; a plurality of bit lines intersecting each other with the plurality of word lines; a gate electrode connected to each of the word lines; a drain electrode spaced apart from the gate electrode and connected to a capacitor; and a source electrode comprises: an anchor part spaced apart from the gate electrode and connected to each of the bit lines; a mobile part where a dimple is formed, comprises the steps of: applying a first voltage V1 to the bit line selected from the plurality of bit lines; applying a second voltage V2 greater than a sum of the first voltage V1 and a pull-in voltage Vpi to the word lines selected from the plurality of word lines; and applying a voltage smaller than a sum of a erase voltage Verase and the pull-in voltage Vpi and a voltage greater than a difference between a write voltage Vwrite and the pull-in voltage Vpi to the word lines unselected from the plurality of word lines.

    摘要翻译： 一种使用根据本发明的机械开关来控制存储器阵列的方法，其中存储器阵列包括： 多个字线; 多个位线与所述多个字线相交; 连接到每个字线的栅电极; 与栅电极间隔开并连接到电容器的漏电极; 并且源电极包括：与栅电极间隔开并连接到每个位线的锚定部分; 形成凹坑的移动部件包括以下步骤：将第一电压V1施加到从多个位线中选择的位线; 将大于第一电压V1和引入电压Vpi的和的第二电压V2施加到从多个字线中选择的字线; 以及将小于擦除电压Verase和引入电压Vpi之和的电压和大于写入电压V write和引入电压Vpi之间的电压的电压施加到从多个字线未被选择的字线 。

    Memory array using mechanical switch and method for operating thereof
    4.
    发明授权
    Memory array using mechanical switch and method for operating thereof 有权
    使用机械开关的存储器阵列及其操作方法

    公开(公告)号：US07787276B2

    公开(公告)日：2010-08-31

    申请号：US12122318

    申请日：2008-05-16

    申请人： Jun-Bo Yoon ,  Weon-Wi Jang ,  Jeong-Oen Lee

    发明人： Jun-Bo Yoon ,  Weon-Wi Jang ,  Jeong-Oen Lee

    IPC分类号： G11C5/00

    CPC分类号： G11C23/00 ,  G11C11/565

    摘要： A method for controlling a memory array using a mechanical switch according to the present invention, in which the memory array comprises; a plurality of word lines; a plurality of bit lines intersecting each other with the plurality of word lines; a gate electrode connected to each of the word lines; a drain electrode spaced apart from the gate electrode and connected to a capacitor; and a source electrode comprises: an anchor part spaced apart from the gate electrode and connected to each of the bit lines; a mobile part where a dimple is formed, comprises the steps of: applying a first voltage V1 to the bit line selected from the plurality of bit lines; applying a second voltage V2 greater than a sum of the first voltage V1 and a pull-in voltage Vpi to the word lines selected from the plurality of word lines; and applying a voltage smaller than a sum of a erase voltage Verase and the pull-in voltage Vpi and a voltage greater than a difference between a write voltage Vwrite and the pull-in voltage Vpi to the word lines unselected from the plurality of word lines.

    摘要翻译： 一种使用根据本发明的机械开关来控制存储器阵列的方法，其中存储器阵列包括： 多个字线; 多个位线与所述多个字线相交; 连接到每个字线的栅电极; 与栅电极间隔开并连接到电容器的漏电极; 并且源电极包括：与栅电极间隔开并连接到每个位线的锚定部分; 形成凹坑的移动部件包括以下步骤：将第一电压V1施加到从多个位线中选择的位线; 将大于第一电压V1和引入电压Vpi的和的第二电压V2施加到从多个字线中选择的字线; 以及将小于擦除电压Verase和引入电压Vpi之和的电压和大于写入电压V write和引入电压Vpi之间的电压的电压施加到从多个字线未被选择的字线 。

    PACKAGING METHOD OF MICRO ELECTRO MECHANICAL SYSTEM DEVICE AND PACKAGE THEREOF
    5.
    发明申请
    PACKAGING METHOD OF MICRO ELECTRO MECHANICAL SYSTEM DEVICE AND PACKAGE THEREOF 审中-公开
    微电子机械系统装置的包装方法及其包装

    公开(公告)号：US20090243063A1

    公开(公告)日：2009-10-01

    申请号：US12404743

    申请日：2009-03-16

    申请人： Jun-Bo Yoon ,  Byung-Kee Lee ,  Weon-Wi Jang

    发明人： Jun-Bo Yoon ,  Byung-Kee Lee ,  Weon-Wi Jang

    IPC分类号： H01L23/02 ,  H01L21/50

    CPC分类号： B81C1/00333 ,  B81C2201/0149 ,  B81C2203/0136 ,  B81C2203/0145 ,  B82Y30/00

    摘要： Disclosed are a micro electro mechanical system (MEMS) device and a package thereof. The packaging method of a MEMS device comprises: sequentially forming a sacrificial layer, a support layer, and a block copolymer layer on a substrate on which the MEMS device is formed; self-assembling the block copolymer layer formed on the support layer; selectively etching a part of the self-assembled block copolymer layer to form a plurality of nano-pores; forming a plurality of etching holes in the support layer corresponding to the plurality of nano-pores using the block copolymer layer in which the plurality of nano-pores are formed as a mask; removing the sacrificial layer using the etching holes formed in the support layer; and forming a shielding layer on the support layer.

    摘要翻译： 公开了一种微机电系统（MEMS）装置及其封装。 MEMS器件的封装方法包括：在其上形成MEMS器件的衬底上顺序形成牺牲层，支撑层和嵌段共聚物层; 自组装形成在支撑层上的嵌段共聚物层; 选择性地蚀刻部分自组装嵌段共聚物层以形成多个纳米孔; 使用其中形成有多个纳米孔作为掩模的嵌段共聚物层，在与多个纳米孔相对应的支撑层中形成多个蚀刻孔; 使用形成在支撑层中的蚀刻孔去除牺牲层; 并在支撑层上形成屏蔽层。