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1.发明授权Surface hardened resins for disk substrates, methods of manufacture thereof and production devices for the manufacture thereof 失效用于盘基片的表面硬化树脂，其制造方法和用于制造它们的生产装置公开(公告)号：US06555182B1
公开(公告)日：2003-04-29
申请号：US09346078
申请日：1999-07-01
申请人： Minehiro Tonosaki , Yutaka Takei , Hiroyuki Okita , Yuji Horino , Akiyoshi Chayahara , Atsushi Kinomura , Nobuteru Tsubouchi
发明人： Minehiro Tonosaki , Yutaka Takei , Hiroyuki Okita , Yuji Horino , Akiyoshi Chayahara , Atsushi Kinomura , Nobuteru Tsubouchi
IPC分类号： C23C1402
CPC分类号： C23C14/48 , B29C59/16 , B29C2035/0872 , B29C2043/527 , B29C2043/566 , C23C14/02
摘要： A surface hardening method for resins and a surface hardened resin, capable of reforming the surface of a plastic disk substrate at low energy in a short time, and a production device of such a resin is disclosed. The formation of an ion-implanted layer 11 by implanting equal to or more than 1017 carbon ions per cm2 into the surface of a plastic disk substrate 10 at equal to or less than 20 KeV and the formation of a thin film 12 of high hardness on the ion-implanted layer 11 can be performed alternately or simultaneously, and the hardening rate is increased further by using a bias device.
摘要翻译： 公开了一种能够在短时间内以低能量重塑塑料盘基板的表面的树脂和表面硬化树脂的表面硬化方法，以及这种树脂的制造装置。 通过将等于或大于1017个碳离子/ cm 2注入到等于或小于20keV的塑料盘基片10的表面上并形成高硬度的薄膜12，形成离子注入层11 可以交替地或同时地执行离子注入层11，并且通过使用偏置装置进一步增加硬化率。
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公开(公告)号：US06169288A
公开(公告)日：2001-01-02
申请号：US09159510
申请日：1998-09-24
IPC分类号： H01J37317
CPC分类号： H01J37/08 , H01J49/161 , H01J2237/31701
摘要： A laser ablation type ion source including vacuum chambers provided with a retaining section for holding a solid raw material for the generation of ions, an ion extracting electrode, an ion accelerating electrode, and a mass spectrograph for ion separation. The ion source also includes a laser beam source for injecting a laser beam of high density into the vacuum chamber.
摘要翻译： 一种激光烧蚀型离子源，包括设置有用于保持用于产生离子的固体原料的保持部的真空室，离子提取电极，离子加速电极和用于离子分离的质谱仪。 离子源还包括用于将高密度激光束注入真空室的激光束源。
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公开(公告)号：US6039847A
公开(公告)日：2000-03-21
申请号：US41099
申请日：1998-03-12
IPC分类号： C23C14/46 , H01J37/317 , C23C14/34
CPC分类号： H01J37/3178 , C23C14/46 , H01J2237/3146
摘要： A material of ions is sputtered with cesium ions to generate negative ions and, the negative ions are accelerated and mass-separated to obtain a negative ion beam, and a material of thin film is sputtered with the negative ion beam, thereby forming a thin film on a base material.
摘要翻译： 离子的材料用铯离子溅射以产生负离子，并且负离子被加速和质量分离以获得负离子束，并且用负离子束溅射薄膜材料，从而形成薄膜 在基材上。
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4.发明授权Method for extracting ion current from space of high vacuum into space of low vacuum 失效从高真空空间将离子电流提取到低真空空间的方法
公开(公告)号：US5637880A
公开(公告)日：1997-06-10
申请号：US580817
申请日：1995-12-29
IPC分类号： H01J37/08 , H01J5/18 , H01J33/04 , H01J37/301
CPC分类号： H01J37/301 , H01J5/18
摘要： A method for the extraction of an ion current from a space of a high degree of vacuum into a space of a low degree of vacuum comprises interposing between the space of the high degree of vacuum and the space of the low degree of vacuum an ion current thin film formed of a member having a uniform crystal orientation and causing the ion current to pass from the space of the high degree of vacuum through the thin film into the space of the low degree of vacuum.
摘要翻译： 从高真空空间将离子电流提取到低真空度的方法包括：在高真空度的空间和低真空度的空间之间插入离子电流 由具有均匀晶体取向的构件形成的薄膜，并使离子电流从高真空度的空间通过薄膜进入低真空度的空间。
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公开(公告)号：US20060266279A1
公开(公告)日：2006-11-30
申请号：US11274148
申请日：2005-11-16
CPC分类号： C30B25/20 , C30B7/005 , C30B29/04 , Y10S117/902
摘要： The present invention provides a method for producing a single crystals by preferential epitaxial growth of {100} face, the method comprising the steps of (1) growing the crystal on a single crystal {100} substrate; (2) forming on the side of the grown crystal a surface parallel to a {100} face different from the {100} face in the growth direction, and (3) growing the crystal on the formed {100} surface; and the steps (2) and (3) being performed once or more than once. The present invention further provides a method for producing a single-crystal diamond wherein used is a metallic holder for the single-crystal diamond having a crystal holding portion which is raised above an outer peripheral portion of the holder, is apart from the outer peripheral portion of the holder, and has a recessed shape. According to the present invention, a method for producing a single crystal by epitaxial growth, in particular a method for producing a single-crystal diamond using gaseous phase synthetic methods enable the production of a large single-crystal diamond in a comparatively short time at low cost.
摘要翻译： 本发明提供了通过{100}面的优先外延生长来制造单晶的方法，该方法包括以下步骤：（1）在单晶{100}衬底上生长晶体; （2）在生长晶体的侧面上形成平行于生长方向上与{100}面不同的{100}面的表面，和（3）在所形成的{100}表面上生长晶体; 并且步骤（2）和（3）执行一次或多于一次。 本发明还提供一种用于制造单晶金刚石的方法，其中使用的是具有晶体保持部分的单晶金刚石的金属保持器，所述晶体保持部分在保持器的外周部分上方升高，与外周部分 并具有凹陷形状。 根据本发明，通过外延生长制造单晶的方法，特别是使用气相合成方法制造单晶金刚石的方法使得能够在较短时间内生产大型单晶金刚石 成本。
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公开(公告)号：US07736435B2
公开(公告)日：2010-06-15
申请号：US11274148
申请日：2005-11-16
IPC分类号： C30B25/02
CPC分类号： C30B25/20 , C30B7/005 , C30B29/04 , Y10S117/902
摘要： A method for producing a single crystals by preferential epitaxial growth of {100} face, comprising the steps of (1) growing the crystal on a single crystal {100} substrate; (2) forming on the side of the grown crystal a surface parallel to a {100} face different from the {100}face in the growth direction, and (3) growing the crystal on the formed {100} surface; and the steps (2) and (3) being performed once or more than once. A method for producing a single-crystal diamond using a metallic holder for the single-crystal diamond having a crystal holding portion which is raised above an outer peripheral portion of the holder, is part from the outer peripheral portion of the holder, and has a recessed shape. The methods enable the production of a large single-crystal diamond in a comparatively short time at low cost.
摘要翻译： 一种通过{100}面的优先外延生长来生产单晶的方法，包括以下步骤：（1）在单晶{100}衬底上生长晶体; （2）在生长晶体的侧面上形成平行于生长方向上与{100}面不同的{100}面的表面，和（3）在所形成的{100}表面上生长晶体; 并且步骤（2）和（3）执行一次或多于一次。 使用具有在保持器的外周部上方升起的晶体保持部的具有用于单晶金刚石的金属保持器制造单晶金刚石的方法是从保持器的外周部分开始的，并且具有 凹陷形状。 该方法能够在较短的时间内以低成本生产大型单晶金刚石。
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