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公开(公告)号：US07411170B2
公开(公告)日：2008-08-12
申请号：US11835009
申请日：2007-08-07
IPC分类号： H01L27/00 , H01L31/062
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14641
摘要： A photoelectric-conversion apparatus includes a photoelectric-conversion area where a plurality of photoelectric-conversion elements configured to convert incident light into electrical charges, a plurality of floating-diffusion areas, a plurality of transfer-MOS transistors configured to transfer electrical charges of the photoelectric-conversion element to the floating-diffusion area, and a plurality of amplification-MOS transistors configured to read and transmit a signal generated based on the transferred electrical charges to an output line are provided. An antireflection film is provided on a light-receiving surface of the photoelectric-conversion element. The gate of the amplification-MOS transistor is electrically connected to one floating-diffusion area by providing one conductor in a single contact hole, and the anti-reflection film covers the photoelectric-conversion area except a base part of the contact hole.
摘要翻译： 光电转换装置包括光电转换区域，其中多个光电转换元件被配置为将入射光转换成电荷，多个浮动扩散区域，多个转移MOS晶体管，被配置为转移电荷 提供到浮置扩散区域的光电转换元件，以及被配置为将基于所传送的电荷产生的信号读取并发送到输出线的多个放大MOS晶体管。 在光电转换元件的光接收表面上设置防反射膜。 放大MOS晶体管的栅极通过在单个接触孔中提供一个导体而电连接到一个浮动扩散区域，并且防反射膜覆盖除了接触孔的基部之外的光电转换区域。
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公开(公告)号：US20080054165A1
公开(公告)日：2008-03-06
申请号：US11835009
申请日：2007-08-07
IPC分类号： G01J1/44 , H01L31/062
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14641
摘要： A photoelectric-conversion apparatus includes a photoelectric-conversion area where a plurality of photoelectric-conversion elements configured to convert incident light into electrical charges, a plurality of floating-diffusion areas, a plurality of transfer-MOS transistors configured to transfer electrical charges of the photoelectric-conversion element to the floating-diffusion area, and a plurality of amplification-MOS transistors configured to read and transmit a signal generated based on the transferred electrical charges to an output line are provided. An antireflection film is provided on a light-receiving surface of the photoelectric-conversion element. The gate of the amplification-MOS transistor is electrically connected to one floating-diffusion area by providing one conductor in a single contact hole, and the anti-reflection film covers the photoelectric-conversion area except a base part of the contact hole.
摘要翻译： 光电转换装置包括光电转换区域，其中多个光电转换元件被配置为将入射光转换成电荷，多个浮动扩散区域，多个转移MOS晶体管，被配置为转移电荷 提供到浮置扩散区域的光电转换元件，以及被配置为将基于所传送的电荷产生的信号读取并发送到输出线的多个放大MOS晶体管。 在光电转换元件的光接收表面上设置防反射膜。 放大MOS晶体管的栅极通过在单个接触孔中提供一个导体而电连接到一个浮动扩散区域，并且防反射膜覆盖除了接触孔的基部之外的光电转换区域。
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公开(公告)号：US20090011532A1
公开(公告)日：2009-01-08
申请号：US12168245
申请日：2008-07-07
IPC分类号： H01L31/113
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14641
摘要： A photoelectric-conversion apparatus includes a photoelectric-conversion area where a plurality of photoelectric-conversion elements configured to convert incident light into electrical charges, a plurality of floating-diffusion areas, a plurality of transfer-MOS transistors configured to transfer electrical charges of the photoelectric-conversion element to the floating-diffusion area, and a plurality of amplification-MOS transistors configured to read and transmit a signal generated based on the transferred electrical charges to an output line are provided. An antireflection film is provided on a light-receiving surface of the photoelectric-conversion element. The gate of the amplification-MOS transistor is electrically connected to one floating-diffusion area by providing one conductor in a single contact hole, and the anti-reflection film covers the photoelectric-conversion area except a base part of the contact hole.
摘要翻译： 光电转换装置包括光电转换区域，其中多个光电转换元件被配置为将入射光转换成电荷，多个浮动扩散区域，多个转移MOS晶体管，被配置为转移电荷 提供到浮置扩散区域的光电转换元件，以及被配置为将基于所传送的电荷产生的信号读取并发送到输出线的多个放大MOS晶体管。 在光电转换元件的光接收表面上设置防反射膜。 放大MOS晶体管的栅极通过在单个接触孔中提供一个导体而电连接到一个浮动扩散区域，并且防反射膜覆盖除了接触孔的基部之外的光电转换区域。
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公开(公告)号：US07592578B2
公开(公告)日：2009-09-22
申请号：US12168245
申请日：2008-07-07
IPC分类号： H01L27/00 , H01L31/062
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14641
摘要： A photoelectric-conversion apparatus includes a photoelectric-conversion area where a plurality of photoelectric-conversion elements configured to convert incident light into electrical charges, a plurality of floating-diffusion areas, a plurality of transfer-MOS transistors configured to transfer electrical charges of the photoelectric-conversion element to the floating-diffusion area, and a plurality of amplification-MOS transistors configured to read and transmit a signal generated based on the transferred electrical charges to an output line are provided. An antireflection film is provided on a light-receiving surface of the photoelectric-conversion element. The gate of the amplification-MOS transistor is electrically connected to one floating-diffusion area by providing one conductor in a single contact hole, and the anti-reflection film covers the photoelectric-conversion area except a base part of the contact hole.
摘要翻译： 光电转换装置包括光电转换区域，其中多个光电转换元件被配置为将入射光转换成电荷，多个浮动扩散区域，多个转移MOS晶体管，被配置为转移电荷 提供到浮置扩散区域的光电转换元件，以及被配置为将基于所传送的电荷产生的信号读取并发送到输出线的多个放大MOS晶体管。 在光电转换元件的光接收表面上设置防反射膜。 放大MOS晶体管的栅极通过在单个接触孔中提供一个导体而电连接到一个浮动扩散区域，并且防反射膜覆盖除了接触孔的基部之外的光电转换区域。
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5.发明申请SOLID-STATE IMAGE PICKUP APPARATUS, IMAGE PICKUP SYSTEM INCLUDING SOLID-STATE IMAGE PICKUP APPARATUS, AND METHOD FOR MANUFACTURING SOLID-STATE IMAGE PICKUP APPARATUS 有权固态图像拾取装置，包括固态图像拾取装置的图像拾取系统以及制造固态图像拾取装置的方法公开(公告)号：US20120199893A1
公开(公告)日：2012-08-09
申请号：US13366189
申请日：2012-02-03
申请人： Takehito Okabe , Kentarou Suzuki , Takashi Usui , Taro Kato , Mineo Shimotsusa , Shunsuke Takimoto
发明人： Takehito Okabe , Kentarou Suzuki , Takashi Usui , Taro Kato , Mineo Shimotsusa , Shunsuke Takimoto
IPC分类号： H01L31/113 , H01L31/18
CPC分类号： H01L27/14685 , H01L27/14629 , H01L27/14632 , H01L27/14641 , H01L27/14687 , H01L27/14689
摘要： A method for manufacturing a solid-state image pickup device is provided. The image pickup apparatus includes a photoelectric conversion portion disposed on the semiconductor substrate, a first insulating film over the photoelectric conversion portion, functioning as an antireflection film, a second insulating film on the first insulating film, disposed corresponding to the photoelectric conversion portion, and a waveguide having a clad and a core whose bottom is disposed on the second insulating film. The method includes forming an opening by anisotropically etching part of a member disposed over the photoelectric conversion portion, thereby forming the clad, and forming the core in the opening. In the method, the etching is performed under conditions where the etching rate of the second insulating film is lower than the etching rate of the member.
摘要翻译： 提供了一种用于制造固态图像拾取装置的方法。 图像拾取装置包括设置在半导体衬底上的光电转换部分，在光电转换部分上的第一绝缘膜，用作抗反射膜，第一绝缘膜上的与光电转换部相对设置的第二绝缘膜，以及 具有包层和芯的波导，其底部设置在第二绝缘膜上。 该方法包括通过各向异性蚀刻设置在光电转换部分上的部件的一部分形成开口，从而形成包层，并在开口中形成芯。 在该方法中，在第二绝缘膜的蚀刻速率低于构件的蚀刻速率的条件下进行蚀刻。
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6.发明授权Solid-state image pickup apparatus, image pickup system including solid-state image pickup apparatus, and method for manufacturing solid-state image pickup apparatus 有权固态图像拾取装置，包括固态图像拾取装置的图像拾取系统和用于制造固态图像拾取装置的方法公开(公告)号：US08987852B2
公开(公告)日：2015-03-24
申请号：US13366189
申请日：2012-02-03
申请人： Takehito Okabe , Kentarou Suzuki , Taskashi Usui , Taro Kato , Mineo Shimotsusa , Shunsuke Takimoto
发明人： Takehito Okabe , Kentarou Suzuki , Taskashi Usui , Taro Kato , Mineo Shimotsusa , Shunsuke Takimoto
IPC分类号： H01L21/00 , H01L27/146
CPC分类号： H01L27/14685 , H01L27/14629 , H01L27/14632 , H01L27/14641 , H01L27/14687 , H01L27/14689
摘要： A method for manufacturing a solid-state image pickup device is provided. The image pickup apparatus includes a photoelectric conversion portion disposed on the semiconductor substrate, a first insulating film over the photoelectric conversion portion, functioning as an antireflection film, a second insulating film on the first insulating film, disposed corresponding to the photoelectric conversion portion, and a waveguide having a clad and a core whose bottom is disposed on the second insulating film. The method includes forming an opening by anisotropically etching part of a member disposed over the photoelectric conversion portion, thereby forming the clad, and forming the core in the opening. In the method, the etching is performed under conditions where the etching rate of the second insulating film is lower than the etching rate of the member.
摘要翻译： 提供了一种用于制造固态图像拾取装置的方法。 图像拾取装置包括设置在半导体衬底上的光电转换部分，在光电转换部分上的第一绝缘膜，用作抗反射膜，第一绝缘膜上的与光电转换部相对设置的第二绝缘膜，以及 具有包层和芯的波导，其底部设置在第二绝缘膜上。 该方法包括通过各向异性蚀刻设置在光电转换部分上的部件的一部分形成开口，从而形成包层，并在开口中形成芯。 在该方法中，在第二绝缘膜的蚀刻速率低于构件的蚀刻速率的条件下进行蚀刻。
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公开(公告)号：US09252169B2
公开(公告)日：2016-02-02
申请号：US13807084
申请日：2011-06-22
IPC分类号： H01L27/146 , H01L27/02 , H01L27/28
CPC分类号： H01L27/14689 , H01L27/0255 , H01L27/0296 , H01L27/146 , H01L27/14636 , H01L27/1464 , H01L27/14645 , H01L27/14685 , H01L27/288
摘要： A solid-state imaging device includes: a first semiconductor substrate including a photoelectric conversion element; and a second semiconductor substrate including at least a part of a peripheral circuit arranged in a main face of the second semiconductor substrate, the peripheral circuit generating a signal based on the charge of the photoelectric conversion element, a main face of the first semiconductor substrate and the main face of the second semiconductor substrate being opposed to each other with sandwiching a wiring structure therebetween; a pad to be connected to an external terminal; and a protection circuit electrically connected to the pad and to the peripheral circuit, wherein the protection circuit is arranged in the main face of the second semiconductor substrate.
摘要翻译： 固态成像装置包括：包括光电转换元件的第一半导体衬底; 以及第二半导体衬底，包括布置在第二半导体衬底的主面中的外围电路的至少一部分，外围电路基于光电转换元件的电荷，第一半导体衬底的主面和 所述第二半导体衬底的主面通过在其间夹着布线结构相互相对; 要连接到外部端子的焊盘; 以及保护电路，电连接到所述焊盘和所述外围电路，其中所述保护电路布置在所述第二半导体衬底的主面中。
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8.发明授权Solid-state image pickup device having waveguides in light-receiving and light-shielding areas 有权在光接收和遮光区域中具有波导的固态图像拾取装置公开(公告)号：US09029967B2
公开(公告)日：2015-05-12
申请号：US13362649
申请日：2012-01-31
IPC分类号： H01L31/0232 , H01L27/146
CPC分类号： H01L27/14623 , H01L27/14614 , H01L27/14621 , H01L27/14625 , H01L27/14629 , H01L27/14636 , H01L27/14638 , H01L27/14643 , H01L27/14645 , H01L27/14685 , H01L27/14689
摘要： A solid-state image pickup device includes a semiconductor substrate in which photoelectric conversion units are arranged. An insulator is disposed on the semiconductor substrate. The insulator has holes associated with the respective photoelectric conversion units. Members are arranged in the respective holes. A light-shielding member is disposed on the opposite side of one of the members from the semiconductor substrate, such that only the associated photoelectric conversion unit is shielded from light. In the solid-state image pickup device, the holes are simultaneously formed and the members are simultaneously formed.
摘要翻译： 固体摄像装置包括其中布置有光电转换单元的半导体衬底。 绝缘体设置在半导体衬底上。 绝缘体具有与各个光电转换单元相关联的孔。 会员排列在相应的孔中。 遮光构件设置在与半导体基板的一个构件的相对侧上，使得只有相关联的光电转换单元被遮光。 在固态图像拾取装置中，同时形成孔并且同时形成构件。
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公开(公告)号：US08947566B2
公开(公告)日：2015-02-03
申请号：US13807107
申请日：2011-06-22
IPC分类号： H04N5/335 , H04N3/14 , H01L31/062 , H01L31/0224 , H01L27/146 , H01L31/18
CPC分类号： H01L27/1469 , H01L21/76898 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L27/14645 , H01L27/14685 , H01L27/14687 , H01L31/0224 , H01L31/18
摘要： The first face of the pad is situated between the front-side face of the second semiconductor substrate and a hypothetical plane including and being parallel to the front-side face, and a second face of the pad that is a face on the opposite side of the first face is situated between the first face and the front-side face of the second semiconductor substrate, and wherein the second face is connected to the wiring structure so that the pad is electrically connected to the circuit arranged in the front-side face of the second semiconductor substrate via the wiring structure.
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公开(公告)号：US20130107075A1
公开(公告)日：2013-05-02
申请号：US13807084
申请日：2011-06-22
IPC分类号： H01L27/146
CPC分类号： H01L27/14689 , H01L27/0255 , H01L27/0296 , H01L27/146 , H01L27/14636 , H01L27/1464 , H01L27/14645 , H01L27/14685 , H01L27/288
摘要： A solid-state imaging device includes: a first semiconductor substrate including a photoelectric conversion element; and a second semiconductor substrate including at least a part of a peripheral circuit arranged in a main face of the second semiconductor substrate, the peripheral circuit generating a signal based on the charge of the photoelectric conversion element, a main face of the first semiconductor substrate and the main face of the second semiconductor substrate being opposed to each other with sandwiching a wiring structure therebetween; a pad to be connected to an external terminal; and a protection circuit electrically connected to the pad and to the peripheral circuit, wherein the protection circuit is arranged in the main face of the second semiconductor substrate.
摘要翻译： 固态成像装置包括：包括光电转换元件的第一半导体衬底; 以及第二半导体衬底，包括布置在第二半导体衬底的主面中的外围电路的至少一部分，外围电路基于光电转换元件的电荷，第一半导体衬底的主面和 所述第二半导体衬底的主面通过在其间夹着布线结构相互相对; 要连接到外部端子的焊盘; 以及保护电路，电连接到所述焊盘和所述外围电路，其中所述保护电路布置在所述第二半导体衬底的主面中。
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