公开(公告)号：US20120199893A1

公开(公告)日：2012-08-09

申请号：US13366189

申请日：2012-02-03

申请人： Takehito Okabe ,  Kentarou Suzuki ,  Takashi Usui ,  Taro Kato ,  Mineo Shimotsusa ,  Shunsuke Takimoto

发明人： Takehito Okabe ,  Kentarou Suzuki ,  Takashi Usui ,  Taro Kato ,  Mineo Shimotsusa ,  Shunsuke Takimoto

IPC分类号： H01L31/113 ,  H01L31/18

CPC分类号： H01L27/14685 ,  H01L27/14629 ,  H01L27/14632 ,  H01L27/14641 ,  H01L27/14687 ,  H01L27/14689

摘要： A method for manufacturing a solid-state image pickup device is provided. The image pickup apparatus includes a photoelectric conversion portion disposed on the semiconductor substrate, a first insulating film over the photoelectric conversion portion, functioning as an antireflection film, a second insulating film on the first insulating film, disposed corresponding to the photoelectric conversion portion, and a waveguide having a clad and a core whose bottom is disposed on the second insulating film. The method includes forming an opening by anisotropically etching part of a member disposed over the photoelectric conversion portion, thereby forming the clad, and forming the core in the opening. In the method, the etching is performed under conditions where the etching rate of the second insulating film is lower than the etching rate of the member.

摘要翻译： 提供了一种用于制造固态图像拾取装置的方法。 图像拾取装置包括设置在半导体衬底上的光电转换部分，在光电转换部分上的第一绝缘膜，用作抗反射膜，第一绝缘膜上的与光电转换部相对设置的第二绝缘膜，以及 具有包层和芯的波导，其底部设置在第二绝缘膜上。 该方法包括通过各向异性蚀刻设置在光电转换部分上的部件的一部分形成开口，从而形成包层，并在开口中形成芯。 在该方法中，在第二绝缘膜的蚀刻速率低于构件的蚀刻速率的条件下进行蚀刻。

公开(公告)号：US08987852B2

公开(公告)日：2015-03-24

申请号：US13366189

申请日：2012-02-03

申请人： Takehito Okabe ,  Kentarou Suzuki ,  Taskashi Usui ,  Taro Kato ,  Mineo Shimotsusa ,  Shunsuke Takimoto

发明人： Takehito Okabe ,  Kentarou Suzuki ,  Taskashi Usui ,  Taro Kato ,  Mineo Shimotsusa ,  Shunsuke Takimoto

IPC分类号： H01L21/00 ,  H01L27/146

CPC分类号： H01L27/14685 ,  H01L27/14629 ,  H01L27/14632 ,  H01L27/14641 ,  H01L27/14687 ,  H01L27/14689

摘要： A method for manufacturing a solid-state image pickup device is provided. The image pickup apparatus includes a photoelectric conversion portion disposed on the semiconductor substrate, a first insulating film over the photoelectric conversion portion, functioning as an antireflection film, a second insulating film on the first insulating film, disposed corresponding to the photoelectric conversion portion, and a waveguide having a clad and a core whose bottom is disposed on the second insulating film. The method includes forming an opening by anisotropically etching part of a member disposed over the photoelectric conversion portion, thereby forming the clad, and forming the core in the opening. In the method, the etching is performed under conditions where the etching rate of the second insulating film is lower than the etching rate of the member.

摘要翻译： 提供了一种用于制造固态图像拾取装置的方法。 图像拾取装置包括设置在半导体衬底上的光电转换部分，在光电转换部分上的第一绝缘膜，用作抗反射膜，第一绝缘膜上的与光电转换部相对设置的第二绝缘膜，以及 具有包层和芯的波导，其底部设置在第二绝缘膜上。 该方法包括通过各向异性蚀刻设置在光电转换部分上的部件的一部分形成开口，从而形成包层，并在开口中形成芯。 在该方法中，在第二绝缘膜的蚀刻速率低于构件的蚀刻速率的条件下进行蚀刻。

公开(公告)号：US07411170B2

公开(公告)日：2008-08-12

申请号：US11835009

申请日：2007-08-07

申请人： Mineo Shimotsusa ,  Shigeru Nishimura ,  Shunsuke Takimoto

发明人： Mineo Shimotsusa ,  Shigeru Nishimura ,  Shunsuke Takimoto

IPC分类号： H01L27/00 ,  H01L31/062

CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/14641

摘要： A photoelectric-conversion apparatus includes a photoelectric-conversion area where a plurality of photoelectric-conversion elements configured to convert incident light into electrical charges, a plurality of floating-diffusion areas, a plurality of transfer-MOS transistors configured to transfer electrical charges of the photoelectric-conversion element to the floating-diffusion area, and a plurality of amplification-MOS transistors configured to read and transmit a signal generated based on the transferred electrical charges to an output line are provided. An antireflection film is provided on a light-receiving surface of the photoelectric-conversion element. The gate of the amplification-MOS transistor is electrically connected to one floating-diffusion area by providing one conductor in a single contact hole, and the anti-reflection film covers the photoelectric-conversion area except a base part of the contact hole.

摘要翻译： 光电转换装置包括光电转换区域，其中多个光电转换元件被配置为将入射光转换成电荷，多个浮动扩散区域，多个转移MOS晶体管，被配置为转移电荷 提供到浮置扩散区域的光电转换元件，以及被配置为将基于所传送的电荷产生的信号读取并发送到输出线的多个放大MOS晶体管。 在光电转换元件的光接收表面上设置防反射膜。 放大MOS晶体管的栅极通过在单个接触孔中提供一个导体而电连接到一个浮动扩散区域，并且防反射膜覆盖除了接触孔的基部之外的光电转换区域。

公开(公告)号：US20080054165A1

公开(公告)日：2008-03-06

申请号：US11835009

申请日：2007-08-07

申请人： Mineo Shimotsusa ,  Shigeru Nishimura ,  Shunsuke Takimoto

发明人： Mineo Shimotsusa ,  Shigeru Nishimura ,  Shunsuke Takimoto

IPC分类号： G01J1/44 ,  H01L31/062

CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/14641

摘要： A photoelectric-conversion apparatus includes a photoelectric-conversion area where a plurality of photoelectric-conversion elements configured to convert incident light into electrical charges, a plurality of floating-diffusion areas, a plurality of transfer-MOS transistors configured to transfer electrical charges of the photoelectric-conversion element to the floating-diffusion area, and a plurality of amplification-MOS transistors configured to read and transmit a signal generated based on the transferred electrical charges to an output line are provided. An antireflection film is provided on a light-receiving surface of the photoelectric-conversion element. The gate of the amplification-MOS transistor is electrically connected to one floating-diffusion area by providing one conductor in a single contact hole, and the anti-reflection film covers the photoelectric-conversion area except a base part of the contact hole.

摘要翻译： 光电转换装置包括光电转换区域，其中多个光电转换元件被配置为将入射光转换成电荷，多个浮动扩散区域，多个转移MOS晶体管，被配置为转移电荷 提供到浮置扩散区域的光电转换元件，以及被配置为将基于所传送的电荷产生的信号读取并发送到输出线的多个放大MOS晶体管。 在光电转换元件的光接收表面上设置防反射膜。 放大MOS晶体管的栅极通过在单个接触孔中提供一个导体而电连接到一个浮动扩散区域，并且防反射膜覆盖除了接触孔的基部之外的光电转换区域。

公开(公告)号：US07592578B2

公开(公告)日：2009-09-22

申请号：US12168245

申请日：2008-07-07

申请人： Mineo Shimotsusa ,  Shigeru Nishimura ,  Shunsuke Takimoto

发明人： Mineo Shimotsusa ,  Shigeru Nishimura ,  Shunsuke Takimoto

IPC分类号： H01L27/00 ,  H01L31/062

CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/14641

摘要： A photoelectric-conversion apparatus includes a photoelectric-conversion area where a plurality of photoelectric-conversion elements configured to convert incident light into electrical charges, a plurality of floating-diffusion areas, a plurality of transfer-MOS transistors configured to transfer electrical charges of the photoelectric-conversion element to the floating-diffusion area, and a plurality of amplification-MOS transistors configured to read and transmit a signal generated based on the transferred electrical charges to an output line are provided. An antireflection film is provided on a light-receiving surface of the photoelectric-conversion element. The gate of the amplification-MOS transistor is electrically connected to one floating-diffusion area by providing one conductor in a single contact hole, and the anti-reflection film covers the photoelectric-conversion area except a base part of the contact hole.

摘要翻译： 光电转换装置包括光电转换区域，其中多个光电转换元件被配置为将入射光转换成电荷，多个浮动扩散区域，多个转移MOS晶体管，被配置为转移电荷 提供到浮置扩散区域的光电转换元件，以及被配置为将基于所传送的电荷产生的信号读取并发送到输出线的多个放大MOS晶体管。 在光电转换元件的光接收表面上设置防反射膜。 放大MOS晶体管的栅极通过在单个接触孔中提供一个导体而电连接到一个浮动扩散区域，并且防反射膜覆盖除了接触孔的基部之外的光电转换区域。

公开(公告)号：US20090011532A1

公开(公告)日：2009-01-08

申请号：US12168245

申请日：2008-07-07

申请人： Mineo Shimotsusa ,  Shigeru Nishimura ,  Shunsuke Takimoto

发明人： Mineo Shimotsusa ,  Shigeru Nishimura ,  Shunsuke Takimoto

IPC分类号： H01L31/113

CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/14641

摘要： A photoelectric-conversion apparatus includes a photoelectric-conversion area where a plurality of photoelectric-conversion elements configured to convert incident light into electrical charges, a plurality of floating-diffusion areas, a plurality of transfer-MOS transistors configured to transfer electrical charges of the photoelectric-conversion element to the floating-diffusion area, and a plurality of amplification-MOS transistors configured to read and transmit a signal generated based on the transferred electrical charges to an output line are provided. An antireflection film is provided on a light-receiving surface of the photoelectric-conversion element. The gate of the amplification-MOS transistor is electrically connected to one floating-diffusion area by providing one conductor in a single contact hole, and the anti-reflection film covers the photoelectric-conversion area except a base part of the contact hole.

摘要翻译： 光电转换装置包括光电转换区域，其中多个光电转换元件被配置为将入射光转换成电荷，多个浮动扩散区域，多个转移MOS晶体管，被配置为转移电荷 提供到浮置扩散区域的光电转换元件，以及被配置为将基于所传送的电荷产生的信号读取并发送到输出线的多个放大MOS晶体管。 在光电转换元件的光接收表面上设置防反射膜。 放大MOS晶体管的栅极通过在单个接触孔中提供一个导体而电连接到一个浮动扩散区域，并且防反射膜覆盖除了接触孔的基部之外的光电转换区域。

公开(公告)号：US07920192B2

公开(公告)日：2011-04-05

申请号：US11774270

申请日：2007-07-06

申请人： Takanori Watanabe ,  Tetsuya Itano ,  Hidekazu Takahashi ,  Shunsuke Takimoto ,  Kotaro Abukawa ,  Hiroaki Naruse ,  Shigeru Nishimura ,  Masatsugu Itahashi

发明人： Takanori Watanabe ,  Tetsuya Itano ,  Hidekazu Takahashi ,  Shunsuke Takimoto ,  Kotaro Abukawa ,  Hiroaki Naruse ,  Shigeru Nishimura ,  Masatsugu Itahashi

IPC分类号： H04N5/335

CPC分类号： H01L27/14616 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14689

摘要： A photoelectric conversion device includes a photoelectric conversion region having a plurality of photoelectric conversion elements and a first MOS transistor configured to read a signal in response to an electric charge of each photoelectric conversion element; and a peripheral circuit region having a second MOS transistor configured to drive the first MOS transistor and/or amplify the signal read from the photoelectric conversion region, the photoelectric conversion region and the peripheral circuit region being located on the same semiconductor substrate, wherein an impurity concentration in a drain of the first MOS transistor is lower than an impurity concentration in a drain of the second MOS transistor.

摘要翻译： 光电转换装置包括具有多个光电转换元件的光电转换区域和被配置为响应每个光电转换元件的电荷读取信号的第一MOS晶体管; 以及具有第二MOS晶体管的外围电路区域，被配置为驱动第一MOS晶体管和/或放大从光电转换区域读取的信号，光电转换区域和外围电路区域位于同一半导体衬底上，其中杂质 第一MOS晶体管的漏极中的浓度低于第二MOS晶体管的漏极中的杂质浓度。

公开(公告)号：US20110003426A1

公开(公告)日：2011-01-06

申请号：US12881582

申请日：2010-09-14

申请人： Takanori Watanabe ,  Tetsuya Itano ,  Hidekazu Takahashi ,  Shunsuke Takimoto ,  Kotaro Abukawa ,  Hiroaki Naruse ,  Shigeru Nishimura ,  Masatsugu Itahashi

发明人： Takanori Watanabe ,  Tetsuya Itano ,  Hidekazu Takahashi ,  Shunsuke Takimoto ,  Kotaro Abukawa ,  Hiroaki Naruse ,  Shigeru Nishimura ,  Masatsugu Itahashi

IPC分类号： H01L31/18

CPC分类号： H01L27/14616 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14689

摘要： A photoelectric conversion device includes a photoelectric conversion region having a plurality of photoelectric conversion elements and a first MOS transistor configured to read a signal in response to an electric charge of each photoelectric conversion element; and a peripheral circuit region having a second MOS transistor configured to drive the first MOS transistor and/or amplify the signal read from the photoelectric conversion region, the photoelectric conversion region and the peripheral circuit region being located on the same semiconductor substrate, wherein an impurity concentration in a drain of the first MOS transistor is lower than an impurity concentration in a drain of the second MOS transistor.

摘要翻译： 光电转换装置包括具有多个光电转换元件的光电转换区域和被配置为响应每个光电转换元件的电荷读取信号的第一MOS晶体管; 以及具有第二MOS晶体管的外围电路区域，被配置为驱动第一MOS晶体管和/或放大从光电转换区域读取的信号，光电转换区域和外围电路区域位于同一半导体衬底上，其中杂质 第一MOS晶体管的漏极中的浓度低于第二MOS晶体管的漏极中的杂质浓度。

公开(公告)号：US08411187B2

公开(公告)日：2013-04-02

申请号：US13040607

申请日：2011-03-04

申请人： Takanori Watanabe ,  Tetsuya Itano ,  Hidekazu Takahashi ,  Shunsuke Takimoto ,  Kotaro Abukawa ,  Hiroaki Naruse ,  Shigeru Nishimura ,  Masatsugu Itahashi

发明人： Takanori Watanabe ,  Tetsuya Itano ,  Hidekazu Takahashi ,  Shunsuke Takimoto ,  Kotaro Abukawa ,  Hiroaki Naruse ,  Shigeru Nishimura ,  Masatsugu Itahashi

IPC分类号： H04N3/14 ,  H01L31/062

CPC分类号： H01L27/14616 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14689

摘要： A photoelectric conversion device includes a photoelectric conversion region having a plurality of photoelectric conversion elements and a first MOS transistor configured to read a signal in response to an electric charge of each photoelectric conversion element; and a peripheral circuit region having a second MOS transistor configured to drive the first MOS transistor and/or amplify the signal read from the photoelectric conversion region, the photoelectric conversion region and the peripheral circuit region being located on the same semiconductor substrate, wherein an impurity concentration in a drain of the first MOS transistor is lower than an impurity concentration in a drain of the second MOS transistor.

摘要翻译： 光电转换装置包括具有多个光电转换元件的光电转换区域和被配置为响应每个光电转换元件的电荷读取信号的第一MOS晶体管; 以及具有第二MOS晶体管的外围电路区域，被配置为驱动第一MOS晶体管和/或放大从光电转换区域读取的信号，光电转换区域和外围电路区域位于同一半导体衬底上，其中杂质 第一MOS晶体管的漏极中的浓度低于第二MOS晶体管的漏极中的杂质浓度。

公开(公告)号：US20110157447A1

公开(公告)日：2011-06-30

申请号：US13040607

申请日：2011-03-04

申请人： Takanori Watanabe ,  Tetsuya Itano ,  Hidekazu Takahashi ,  Shunsuke Takimoto ,  Kotaro Abukawa ,  Hiroaki Naruse ,  Shigeru Nishimura ,  Masatsugu Itahashi

发明人： Takanori Watanabe ,  Tetsuya Itano ,  Hidekazu Takahashi ,  Shunsuke Takimoto ,  Kotaro Abukawa ,  Hiroaki Naruse ,  Shigeru Nishimura ,  Masatsugu Itahashi

IPC分类号： H04N5/335

CPC分类号： H01L27/14616 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14689

摘要： A photoelectric conversion device includes a photoelectric conversion region having a plurality of photoelectric conversion elements and a first MOS transistor configured to read a signal in response to an electric charge of each photoelectric conversion element; and a peripheral circuit region having a second MOS transistor configured to drive the first MOS transistor and/or amplify the signal read from the photoelectric conversion region, the photoelectric conversion region and the peripheral circuit region being located on the same semiconductor substrate, wherein an impurity concentration in a drain of the first MOS transistor is lower than an impurity concentration in a drain of the second MOS transistor.