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    Photoelectric-conversion apparatus and image-pickup system
    1.
    发明授权
    Photoelectric-conversion apparatus and image-pickup system 有权
    光电转换装置和摄像系统

    公开(公告)号：US07411170B2

    公开(公告)日：2008-08-12

    申请号：US11835009

    申请日：2007-08-07

    申请人： Mineo Shimotsusa ,  Shigeru Nishimura ,  Shunsuke Takimoto

    发明人： Mineo Shimotsusa ,  Shigeru Nishimura ,  Shunsuke Takimoto

    IPC分类号： H01L27/00 ,  H01L31/062

    CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/14641

    摘要： A photoelectric-conversion apparatus includes a photoelectric-conversion area where a plurality of photoelectric-conversion elements configured to convert incident light into electrical charges, a plurality of floating-diffusion areas, a plurality of transfer-MOS transistors configured to transfer electrical charges of the photoelectric-conversion element to the floating-diffusion area, and a plurality of amplification-MOS transistors configured to read and transmit a signal generated based on the transferred electrical charges to an output line are provided. An antireflection film is provided on a light-receiving surface of the photoelectric-conversion element. The gate of the amplification-MOS transistor is electrically connected to one floating-diffusion area by providing one conductor in a single contact hole, and the anti-reflection film covers the photoelectric-conversion area except a base part of the contact hole.

    摘要翻译： 光电转换装置包括光电转换区域，其中多个光电转换元件被配置为将入射光转换成电荷，多个浮动扩散区域，多个转移MOS晶体管，被配置为转移电荷 提供到浮置扩散区域的光电转换元件，以及被配置为将基于所传送的电荷产生的信号读取并发送到输出线的多个放大MOS晶体管。 在光电转换元件的光接收表面上设置防反射膜。 放大MOS晶体管的栅极通过在单个接触孔中提供一个导体而电连接到一个浮动扩散区域，并且防反射膜覆盖除了接触孔的基部之外的光电转换区域。

    PHOTOELECTRIC-CONVERSION APPARATUS AND IMAGE-PICKUP SYSTEM
    2.
    发明申请
    PHOTOELECTRIC-CONVERSION APPARATUS AND IMAGE-PICKUP SYSTEM 有权
    光电转换装置和图像拾取系统

    公开(公告)号：US20080054165A1

    公开(公告)日：2008-03-06

    申请号：US11835009

    申请日：2007-08-07

    申请人： Mineo Shimotsusa ,  Shigeru Nishimura ,  Shunsuke Takimoto

    发明人： Mineo Shimotsusa ,  Shigeru Nishimura ,  Shunsuke Takimoto

    IPC分类号： G01J1/44 ,  H01L31/062

    CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/14641

    摘要： A photoelectric-conversion apparatus includes a photoelectric-conversion area where a plurality of photoelectric-conversion elements configured to convert incident light into electrical charges, a plurality of floating-diffusion areas, a plurality of transfer-MOS transistors configured to transfer electrical charges of the photoelectric-conversion element to the floating-diffusion area, and a plurality of amplification-MOS transistors configured to read and transmit a signal generated based on the transferred electrical charges to an output line are provided. An antireflection film is provided on a light-receiving surface of the photoelectric-conversion element. The gate of the amplification-MOS transistor is electrically connected to one floating-diffusion area by providing one conductor in a single contact hole, and the anti-reflection film covers the photoelectric-conversion area except a base part of the contact hole.

    摘要翻译： 光电转换装置包括光电转换区域，其中多个光电转换元件被配置为将入射光转换成电荷，多个浮动扩散区域，多个转移MOS晶体管，被配置为转移电荷 提供到浮置扩散区域的光电转换元件，以及被配置为将基于所传送的电荷产生的信号读取并发送到输出线的多个放大MOS晶体管。 在光电转换元件的光接收表面上设置防反射膜。 放大MOS晶体管的栅极通过在单个接触孔中提供一个导体而电连接到一个浮动扩散区域，并且防反射膜覆盖除了接触孔的基部之外的光电转换区域。

    Photoelectric-conversion apparatus and image-pickup system
    3.
    发明授权
    Photoelectric-conversion apparatus and image-pickup system 有权
    光电转换装置和摄像系统

    公开(公告)号：US07592578B2

    公开(公告)日：2009-09-22

    申请号：US12168245

    申请日：2008-07-07

    申请人： Mineo Shimotsusa ,  Shigeru Nishimura ,  Shunsuke Takimoto

    发明人： Mineo Shimotsusa ,  Shigeru Nishimura ,  Shunsuke Takimoto

    IPC分类号： H01L27/00 ,  H01L31/062

    CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/14641

    摘要： A photoelectric-conversion apparatus includes a photoelectric-conversion area where a plurality of photoelectric-conversion elements configured to convert incident light into electrical charges, a plurality of floating-diffusion areas, a plurality of transfer-MOS transistors configured to transfer electrical charges of the photoelectric-conversion element to the floating-diffusion area, and a plurality of amplification-MOS transistors configured to read and transmit a signal generated based on the transferred electrical charges to an output line are provided. An antireflection film is provided on a light-receiving surface of the photoelectric-conversion element. The gate of the amplification-MOS transistor is electrically connected to one floating-diffusion area by providing one conductor in a single contact hole, and the anti-reflection film covers the photoelectric-conversion area except a base part of the contact hole.

    摘要翻译： 光电转换装置包括光电转换区域，其中多个光电转换元件被配置为将入射光转换成电荷，多个浮动扩散区域，多个转移MOS晶体管，被配置为转移电荷 提供到浮置扩散区域的光电转换元件，以及被配置为将基于所传送的电荷产生的信号读取并发送到输出线的多个放大MOS晶体管。 在光电转换元件的光接收表面上设置防反射膜。 放大MOS晶体管的栅极通过在单个接触孔中提供一个导体而电连接到一个浮动扩散区域，并且防反射膜覆盖除了接触孔的基部之外的光电转换区域。

    PHOTOELECTRIC-CONVERSION APPARATUS AND IMAGE-PICKUP SYSTEM
    4.
    发明申请
    PHOTOELECTRIC-CONVERSION APPARATUS AND IMAGE-PICKUP SYSTEM 有权
    光电转换装置和图像拾取系统

    公开(公告)号：US20090011532A1

    公开(公告)日：2009-01-08

    申请号：US12168245

    申请日：2008-07-07

    申请人： Mineo Shimotsusa ,  Shigeru Nishimura ,  Shunsuke Takimoto

    发明人： Mineo Shimotsusa ,  Shigeru Nishimura ,  Shunsuke Takimoto

    IPC分类号： H01L31/113

    CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/14641

    摘要： A photoelectric-conversion apparatus includes a photoelectric-conversion area where a plurality of photoelectric-conversion elements configured to convert incident light into electrical charges, a plurality of floating-diffusion areas, a plurality of transfer-MOS transistors configured to transfer electrical charges of the photoelectric-conversion element to the floating-diffusion area, and a plurality of amplification-MOS transistors configured to read and transmit a signal generated based on the transferred electrical charges to an output line are provided. An antireflection film is provided on a light-receiving surface of the photoelectric-conversion element. The gate of the amplification-MOS transistor is electrically connected to one floating-diffusion area by providing one conductor in a single contact hole, and the anti-reflection film covers the photoelectric-conversion area except a base part of the contact hole.

    摘要翻译： 光电转换装置包括光电转换区域，其中多个光电转换元件被配置为将入射光转换成电荷，多个浮动扩散区域，多个转移MOS晶体管，被配置为转移电荷 提供到浮置扩散区域的光电转换元件，以及被配置为将基于所传送的电荷产生的信号读取并发送到输出线的多个放大MOS晶体管。 在光电转换元件的光接收表面上设置防反射膜。 放大MOS晶体管的栅极通过在单个接触孔中提供一个导体而电连接到一个浮动扩散区域，并且防反射膜覆盖除了接触孔的基部之外的光电转换区域。

    Solid-state image pickup apparatus, image pickup system including solid-state image pickup apparatus, and method for manufacturing solid-state image pickup apparatus
    5.
    发明授权
    Solid-state image pickup apparatus, image pickup system including solid-state image pickup apparatus, and method for manufacturing solid-state image pickup apparatus 有权
    固态图像拾取装置，包括固态图像拾取装置的图像拾取系统和用于制造固态图像拾取装置的方法

    公开(公告)号：US08987852B2

    公开(公告)日：2015-03-24

    申请号：US13366189

    申请日：2012-02-03

    申请人： Takehito Okabe ,  Kentarou Suzuki ,  Taskashi Usui ,  Taro Kato ,  Mineo Shimotsusa ,  Shunsuke Takimoto

    发明人： Takehito Okabe ,  Kentarou Suzuki ,  Taskashi Usui ,  Taro Kato ,  Mineo Shimotsusa ,  Shunsuke Takimoto

    IPC分类号： H01L21/00 ,  H01L27/146

    CPC分类号： H01L27/14685 ,  H01L27/14629 ,  H01L27/14632 ,  H01L27/14641 ,  H01L27/14687 ,  H01L27/14689

    摘要： A method for manufacturing a solid-state image pickup device is provided. The image pickup apparatus includes a photoelectric conversion portion disposed on the semiconductor substrate, a first insulating film over the photoelectric conversion portion, functioning as an antireflection film, a second insulating film on the first insulating film, disposed corresponding to the photoelectric conversion portion, and a waveguide having a clad and a core whose bottom is disposed on the second insulating film. The method includes forming an opening by anisotropically etching part of a member disposed over the photoelectric conversion portion, thereby forming the clad, and forming the core in the opening. In the method, the etching is performed under conditions where the etching rate of the second insulating film is lower than the etching rate of the member.

    摘要翻译： 提供了一种用于制造固态图像拾取装置的方法。 图像拾取装置包括设置在半导体衬底上的光电转换部分，在光电转换部分上的第一绝缘膜，用作抗反射膜，第一绝缘膜上的与光电转换部相对设置的第二绝缘膜，以及 具有包层和芯的波导，其底部设置在第二绝缘膜上。 该方法包括通过各向异性蚀刻设置在光电转换部分上的部件的一部分形成开口，从而形成包层，并在开口中形成芯。 在该方法中，在第二绝缘膜的蚀刻速率低于构件的蚀刻速率的条件下进行蚀刻。

    SOLID-STATE IMAGE PICKUP APPARATUS, IMAGE PICKUP SYSTEM INCLUDING SOLID-STATE IMAGE PICKUP APPARATUS, AND METHOD FOR MANUFACTURING SOLID-STATE IMAGE PICKUP APPARATUS
    6.
    发明申请
    SOLID-STATE IMAGE PICKUP APPARATUS, IMAGE PICKUP SYSTEM INCLUDING SOLID-STATE IMAGE PICKUP APPARATUS, AND METHOD FOR MANUFACTURING SOLID-STATE IMAGE PICKUP APPARATUS 有权
    固态图像拾取装置，包括固态图像拾取装置的图像拾取系统以及制造固态图像拾取装置的方法

    公开(公告)号：US20120199893A1

    公开(公告)日：2012-08-09

    申请号：US13366189

    申请日：2012-02-03

    申请人： Takehito Okabe ,  Kentarou Suzuki ,  Takashi Usui ,  Taro Kato ,  Mineo Shimotsusa ,  Shunsuke Takimoto

    发明人： Takehito Okabe ,  Kentarou Suzuki ,  Takashi Usui ,  Taro Kato ,  Mineo Shimotsusa ,  Shunsuke Takimoto

    IPC分类号： H01L31/113 ,  H01L31/18

    CPC分类号： H01L27/14685 ,  H01L27/14629 ,  H01L27/14632 ,  H01L27/14641 ,  H01L27/14687 ,  H01L27/14689

    摘要： A method for manufacturing a solid-state image pickup device is provided. The image pickup apparatus includes a photoelectric conversion portion disposed on the semiconductor substrate, a first insulating film over the photoelectric conversion portion, functioning as an antireflection film, a second insulating film on the first insulating film, disposed corresponding to the photoelectric conversion portion, and a waveguide having a clad and a core whose bottom is disposed on the second insulating film. The method includes forming an opening by anisotropically etching part of a member disposed over the photoelectric conversion portion, thereby forming the clad, and forming the core in the opening. In the method, the etching is performed under conditions where the etching rate of the second insulating film is lower than the etching rate of the member.

    摘要翻译： 提供了一种用于制造固态图像拾取装置的方法。 图像拾取装置包括设置在半导体衬底上的光电转换部分，在光电转换部分上的第一绝缘膜，用作抗反射膜，第一绝缘膜上的与光电转换部相对设置的第二绝缘膜，以及 具有包层和芯的波导，其底部设置在第二绝缘膜上。 该方法包括通过各向异性蚀刻设置在光电转换部分上的部件的一部分形成开口，从而形成包层，并在开口中形成芯。 在该方法中，在第二绝缘膜的蚀刻速率低于构件的蚀刻速率的条件下进行蚀刻。