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1.发明授权Structure and method for a high-speed semiconductor device having a Ge channel layer 有权具有Ge沟道层的高速半导体器件的结构和方法公开(公告)号：US08436336B2
公开(公告)日：2013-05-07
申请号：US11877186
申请日：2007-10-23
IPC分类号： H01L29/06
CPC分类号： H01L29/78696 , H01L29/1054 , H01L29/78684
摘要： The invention provides semiconductor structure comprising a strained Ge channel layer, and a gate dielectric disposed over the strained Ge channel layer. In one aspect of the invention, a strained Ge channel MOSFET is provided. The strained Ge channel MOSFET includes a relaxed SiGe virtual substrate with a Ge content between 50-95%, and a strained Ge channel formed on the virtual substrate. A gate structure is formed upon the strained Ge channel, whereupon a MOSFET is formed with increased performance over bulk Si. In another embodiment of the invention, a semiconductor structure comprising a relaxed Ge channel layer and a virtual substrate, wherein the relaxed Ge channel layer is disposed above the virtual substrate. In a further aspect of the invention, a relaxed Ge channel MOSFET is provided. The method includes providing a relaxed virtual substrate with a Ge composition of approximately 100% and a relaxed Ge channel formed on the virtual substrate.
摘要翻译： 本发明提供包括应变Ge沟道层的半导体结构和设置在应变Ge沟道层上的栅极电介质。 在本发明的一个方面，提供了应变的Ge沟道MOSFET。 应变Ge沟道MOSFET包括Ge含量在50-95％之间的弛豫SiGe虚拟衬底和形成在虚拟衬底上的应变Ge沟道。 在应变Ge通道上形成栅极结构，于是形成具有在体积Si上增加的性能的MOSFET。 在本发明的另一实施例中，包括松弛的Ge沟道层和虚拟衬底的半导体结构，其中放宽的Ge沟道层设置在虚拟衬底之上。 在本发明的另一方面，提供了一种放宽的Ge沟道MOSFET。 该方法包括提供具有约100％的Ge组成的松弛虚拟衬底和形成在虚拟衬底上的松弛Ge沟道。
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2.发明授权Structure and method for a high-speed semiconductor device having a Ge channel layer 有权具有Ge沟道层的高速半导体器件的结构和方法公开(公告)号：US07301180B2
公开(公告)日：2007-11-27
申请号：US10173986
申请日：2002-06-18
IPC分类号： H01L31/0328
CPC分类号： H01L29/78696 , H01L29/1054 , H01L29/78684
摘要： The invention provides semiconductor structure comprising a strained Ge channel layer, and a gate dielectric disposed over the strained Ge channel layer. In one aspect of the invention, a strained Ge channel MOSFET is provided. The strained Ge channel MOSFET includes a relaxed SiGe virtual substrate with a Ge content between 50-95%, and a strained Ge channel formed on the virtual substrate. A gate structure is formed upon the strained Ge channel, whereupon a MOSFET is formed with increased performance over bulk Si. In another embodiment of the invention, a semiconductor structure comprising a relaxed Ge channel layer and a virtual substrate, wherein the relaxed Ge channel layer is disposed above the virtual substrate. In a further aspect of the invention, a relaxed Ge channel MOSFET is provided. The method includes providing a relaxed virtual substrate with a Ge composition of approximately 100% and a relaxed Ge channel formed on the virtual substrate.
摘要翻译： 本发明提供包括应变Ge沟道层的半导体结构和设置在应变Ge沟道层上的栅极电介质。 在本发明的一个方面，提供了应变的Ge沟道MOSFET。 应变Ge沟道MOSFET包括Ge含量在50-95％之间的弛豫SiGe虚拟衬底和形成在虚拟衬底上的应变Ge沟道。 在应变Ge通道上形成栅极结构，于是形成具有在体积Si上增加的性能的MOSFET。 在本发明的另一实施例中，包括松弛的Ge沟道层和虚拟衬底的半导体结构，其中放宽的Ge沟道层设置在虚拟衬底之上。 在本发明的另一方面，提供了一种放宽的Ge沟道MOSFET。 该方法包括提供具有约100％的Ge组成的松弛虚拟衬底和形成在虚拟衬底上的松弛Ge沟道。
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3.发明授权公开(公告)号：US06916727B2
公开(公告)日：2005-07-12
申请号：US10177571
申请日：2002-06-21
IPC分类号： H01L21/20 , H01L21/8238 , H01L27/092 , H01L29/10 , H01L29/78 , H01L29/80
CPC分类号： H01L29/1054 , H01L21/823807 , H01L27/092 , H01L29/802
摘要： A structure includes a tensile strained layer disposed over a substrate, the tensile strained layer having a first thickness. A compressed layer is disposed between the tensile strained layer and the substrate, the compressed layer having a second thickness. The first and second thicknesses are selected to define a first carrier mobility in the tensile strained layer and a second carrier mobility in the compressed layer.
摘要翻译： 一种结构包括设置在基底上的拉伸应变层，拉伸应变层具有第一厚度。 压缩层设置在拉伸应变层和基底之间，压缩层具有第二厚度。 选择第一和第二厚度以限定拉伸应变层中的第一载流子迁移率和压缩层中的第二载流子迁移率。
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公开(公告)号：US06730551B2
公开(公告)日：2004-05-04
申请号：US10211126
申请日：2002-08-02
IPC分类号： H01L21337
CPC分类号： H01L29/1054 , H01L21/823807 , H01L27/092 , H01L29/78 , H01L29/802
摘要： A structure and a method for forming the structure, the method including forming a compressively strained semiconductor layer, the compressively strained layer having a strain greater than or equal to 0.25%. A tensilely strained semiconductor layer is formed over the compressively strained layer. The compressively strained layer is substantially planar, having a surface roughness characterized in (i) having an average wavelength greater than an average wavelength of a carrier in the compressively strained layer or (ii) having an average height less than 10 nm.
摘要翻译： 一种用于形成结构的结构和方法，所述方法包括形成压缩应变半导体层，所述压应变层具有大于或等于0.25％的应变。 在压缩应变层上形成拉伸应变半导体层。 压缩应变层基本上是平面的，具有表面粗糙度，其特征在于：（i）平均波长大于压缩应变层中的载体的平均波长或（ii）平均高度小于10nm。
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5.发明申请STRUCTURE AND METHOD FOR A HIGH-SPEED SEMICONDUCTOR DEVICE HAVING A Ge CHANNEL LAYER 有权具有Ge通道层的高速半导体器件的结构和方法公开(公告)号：US20080128747A1
公开(公告)日：2008-06-05
申请号：US11877186
申请日：2007-10-23
IPC分类号： H01L29/778 , H01L21/336
CPC分类号： H01L29/78696 , H01L29/1054 , H01L29/78684
摘要： The invention provides semiconductor structure comprising a strained Ge channel layer, and a gate dielectric disposed over the strained Ge channel layer. In one aspect of the invention, a strained Ge channel MOSFET is provided. The strained Ge channel MOSFET includes a relaxed SiGe virtual substrate with a Ge content between 50-95%, and a strained Ge channel formed on the virtual substrate. A gate structure is formed upon the strained Ge channel, whereupon a MOSFET is formed with increased performance over bulk Si. In another embodiment of the invention, a semiconductor structure comprising a relaxed Ge channel layer and a virtual substrate, wherein the relaxed Ge channel layer is disposed above the virtual substrate. In a further aspect of the invention, a relaxed Ge channel MOSFET is provided. The method includes providing a relaxed virtual substrate with a Ge composition of approximately 100% and a relaxed Ge channel formed on the virtual substrate.
摘要翻译： 本发明提供包括应变Ge沟道层的半导体结构和设置在应变Ge沟道层上的栅极电介质。 在本发明的一个方面，提供了应变的Ge沟道MOSFET。 应变Ge沟道MOSFET包括Ge含量在50-95％之间的弛豫SiGe虚拟衬底和形成在虚拟衬底上的应变Ge沟道。 在应变Ge通道上形成栅极结构，于是形成具有在体积Si上增加的性能的MOSFET。 在本发明的另一实施例中，包括松弛的Ge沟道层和虚拟衬底的半导体结构，其中放宽的Ge沟道层设置在虚拟衬底之上。 在本发明的另一方面，提供了一种放宽的Ge沟道MOSFET。 该方法包括提供具有约100％的Ge组成的松弛虚拟衬底和形成在虚拟衬底上的松弛Ge沟道。
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公开(公告)号：US07141820B2
公开(公告)日：2006-11-28
申请号：US10788741
申请日：2004-02-27
IPC分类号： H01L29/04
CPC分类号： H01L29/1054 , H01L21/823807 , H01L27/092 , H01L29/78 , H01L29/802
摘要： A structure including a compressively strained semiconductor layer, the compressively strained layer having a strain greater than or equal to 0.25%. A tensilely strained semiconductor layer may be formed over the compressively strained layer. The compressively strained layer is substantially planar, having a surface roughness characterized in (i) having an average wavelength greater than an average wavelength of a carrier in the compressively strained layer and/or (ii) having an average height less than 10 nm.
摘要翻译： 包括压缩应变半导体层的结构，该压缩应变层具有大于或等于0.25％的应变。 可以在压缩应变层上形成拉伸应变半导体层。 压缩应变层基本上是平面的，具有表面粗糙度，其特征在于（i）平均波长大于压缩应变层中的载体的平均波长，和/或（ii）平均高度小于10nm。
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公开(公告)号：US07138310B2
公开(公告)日：2006-11-21
申请号：US10456926
申请日：2003-06-06
IPC分类号： H01L21/8238
CPC分类号： H01L29/66545 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/823807 , H01L21/823814 , H01L29/1054 , H01L29/66628 , H01L29/66636 , H01L29/66651 , H01L29/66916 , H01L29/802 , Y10S438/938
摘要： A semiconductor structure includes a strain-inducing substrate layer having a germanium concentration of at least 10 atomic %. The semiconductor structure also includes a compressively strained layer on the strain-inducing substrate layer. The compressively strained layer has a germanium concentration at least approximately 30 percentage points greater than the germanium concentration of the strain-inducing substrate layer, and has a thickness less than its critical thickness. The semiconductor structure also includes a tensilely strained layer on the compressively strained layer. The tensilely strained layer may be formed from silicon having a thickness less than its critical thickness. A method for fabricating a semiconductor structure includes providing a substrate, providing a compressively strained semiconductor on the substrate, depositing a tensilely strained semiconductor adjacent the substrate until a thickness of a first region of the tensilely strained semiconductor is greater than a thickness of a second region of the tensilely strained semiconductor, forming a n-channel device on the first region, and forming a p-channel device on the second region.
摘要翻译： 半导体结构包括锗浓度为至少10原子％的应变诱导基底层。 半导体结构还包括在应变诱导基底层上的压缩应变层。 压缩应变层的锗浓度比应变诱导基底层的锗浓度大至少约30个百分点，并且具有小于其临界厚度的厚度。 半导体结构还包括在压缩应变层上的拉伸应变层。 拉伸应变层可以由厚度小于其临界厚度的硅形成。 一种用于制造半导体结构的方法包括：提供衬底，在衬底上提供压缩应变半导体，在衬底附近沉积拉伸应变半导体，直到拉伸应变半导体的第一区域的厚度大于第二区域的厚度 的拉伸应变半导体，在第一区域上形成n沟道器件，并在第二区域上形成p沟道器件。
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8.发明授权Methods of fabricating semiconductor devices having strained dual channel layers 有权制造具有应变双通道层的半导体器件的方法公开(公告)号：US07566606B2
公开(公告)日：2009-07-28
申请号：US11544245
申请日：2006-10-06
IPC分类号： H01L21/00
CPC分类号： H01L29/66545 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/823807 , H01L21/823814 , H01L29/1054 , H01L29/66628 , H01L29/66636 , H01L29/66651 , H01L29/66916 , H01L29/802 , Y10S438/938
摘要： A semiconductor structure includes a strain-inducing substrate layer having a germanium concentration of at least 10 atomic %. The semiconductor structure also includes a compressively strained layer on the strain-inducing substrate layer. The compressively strained layer has a germanium concentration at least approximately 30 percentage points greater than the germanium concentration of the strain-inducing substrate layer, and has a thickness less than its critical thickness. The semiconductor structure also includes a tensilely strained layer on the compressively strained layer. The tensilely strained layer may be formed from silicon having a thickness less than its critical thickness. A method for fabricating a semiconductor structure includes providing a substrate, providing a compressively strained semiconductor on the substrate, depositing a tensilely strained semiconductor adjacent the substrate until a thickness of a first region of the tensilely strained semiconductor is greater than a thickness of a second region of the tensilely strained semiconductor, forming a n-channel device on the first region, and forming a p-channel device on the second region.
摘要翻译： 半导体结构包括锗浓度为至少10原子％的应变诱导基底层。 半导体结构还包括在应变诱导基底层上的压缩应变层。 压缩应变层的锗浓度比应变诱导基底层的锗浓度大至少约30个百分点，并且具有小于其临界厚度的厚度。 半导体结构还包括在压缩应变层上的拉伸应变层。 拉伸应变层可以由厚度小于其临界厚度的硅形成。 一种用于制造半导体结构的方法包括：提供衬底，在衬底上提供压缩应变半导体，在衬底附近沉积拉伸应变半导体，直到拉伸应变半导体的第一区域的厚度大于第二区域的厚度 的拉伸应变半导体，在第一区域上形成n沟道器件，并在第二区域上形成p沟道器件。
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公开(公告)号：US07332417B2
公开(公告)日：2008-02-19
申请号：US10765372
申请日：2004-01-27
申请人： Richard Westhoff , Christopher J. Vineis , Matthew T. Currie , Vicky T. Yang , Christopher W. Leitz
发明人： Richard Westhoff , Christopher J. Vineis , Matthew T. Currie , Vicky T. Yang , Christopher W. Leitz
CPC分类号： H01L21/324 , C30B25/02 , C30B29/52 , H01L21/0237 , H01L21/02381 , H01L21/02439 , H01L21/0245 , H01L21/02507 , H01L21/0251 , H01L21/02532 , H01L21/0262 , H01L21/3247
摘要： Semiconductor structures are formed with semiconductor layers having reduced compositional variation. Top surfaces of the semiconductor layers are substantially haze-free.
摘要翻译： 半导体结构由具有降低的组成变化的半导体层形成。 半导体层的顶表面基本上是无雾的。
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公开(公告)号：US20080135830A1
公开(公告)日：2008-06-12
申请号：US11963120
申请日：2007-12-21
申请人： Richard Westhoff , Christopher J. Vineis , Matthew T. Currie , Vicky K. Yang , Christopher W. Leitz
发明人： Richard Westhoff , Christopher J. Vineis , Matthew T. Currie , Vicky K. Yang , Christopher W. Leitz
IPC分类号： H01L29/15
CPC分类号： H01L21/324 , C30B25/02 , C30B29/52 , H01L21/0237 , H01L21/02381 , H01L21/02439 , H01L21/0245 , H01L21/02507 , H01L21/0251 , H01L21/02532 , H01L21/0262 , H01L21/3247
摘要： Semiconductor structures are formed with semiconductor layers having reduced compositional variation. Top surfaces of the semiconductor layers are substantially haze-free.
摘要翻译： 半导体结构由具有降低的组成变化的半导体层形成。 半导体层的顶表面基本上是无雾的。
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