摘要:
A color filter substrate includes a color filter layer, a light-transmissive layer and a light-shielding layer. The light-transmissive layer is disposed between pixels and includes a side surface that forms a reflection surface. The light-shielding layer is laminated on the light-transmissive layer.
摘要:
In at least one embodiment of the disclosure, an electro-optical device comprises a pixel electrode and a transistor corresponding to the pixel electrode. A data line is electrically connected to the transistor. A storage capacitor is provided between the pixel electrode and the transistor. The storage capacitor has a first capacitance electrode and a second capacitance electrode facing each other. A capacitance isolation film is interposed therebetween. An additional capacitor is electrically connected to the data line. The additional capacitor has a first additional capacitance electrode and a second additional capacitance electrode facing each other. An additional capacitance isolation film is interposed therebetween. The first additional capacitance electrode is provided on a same layer as the first capacitance electrode. The second additional capacitance electrode is provided on a layer different from the layers of the first and second capacitance electrodes.
摘要:
An electro-optic device includes data lines and scanning lines extending to cross each other on a substrate, pixel electrodes disposed on the substrate for respective pixels defined corresponding to the data lines and the scanning lines in a plan view of the substrate, thin film transistors electrically connected to the respective pixel electrodes, and at least one amorphous wiring including an amorphous film and disposed in a region containing a region opposite to a channel region of each of the thin film transistors in a plan view of the substrate and in a layer different from that of semiconductor films of the thin film transistors.
摘要:
An electro-optical device includes a semiconductor layer, a first insulating film, a second insulating film, and a gate electrode. The first insulating film is formed in an island shape so as to cover a first junction region of the semiconductor layer. The second insulating film is formed in an island shape so as to cover a second junction region of the semiconductor layer. The gate electrode faces the channel region through a gate insulating film and extends onto the first and second insulating films.
摘要:
An electro-optic device substrate includes a base and a TFT element having a source region and a drain region disposed on the base. The TFT element includes a silicon layer in the source region or the drain region, and the silicon layer at least partially includes a silicided portion. The electro-optic device substrate also includes a metal wire connected to the silicided portion of the silicon layer.
摘要:
A retention capacity in which a first electrode, a lower side capacity insulation film, a second electrode, an upper side capacity insulation film, and a third electrode are laminated is formed between a pixel electrode and a TFT. The lower side capacity insulation film and the upper side capacity insulation film respectively include a plurality of insulation films, and the lamination order thereof is the same.
摘要:
An electro-optical device substrate includes a substrate, a plurality of data lines and a plurality of scanning lines crossing each other on the substrate, and a plurality of pixels defined by the plurality of data lines and the plurality of scanning lines so as to correspond to intersections thereof. Each pixel includes a pixel electrode, a conducting layer formed in a non-opening region separating an opening region of the pixel from that of another pixel, the conducting layer having a protruding portion protruding into the opening region from a part of one of a plurality of region edges defining the opening region, and a first contact portion electrically connecting the pixel electrode and the protruding portion.
摘要:
The invention provides a connection structure including: a first electro-conductive film that is formed on a substrate; an insulation film that is formed on the first electro-conductive film, an end surface of the insulation film facing in a direction in which an end surface of the first electro-conductive film faces; and a second electro-conductive film that extends from the upper surface of the insulation film to reach the end surface of the first electro-conductive film across the end surface of the insulation film, the second electro-conductive film being electrically connected to the first electro-conductive film via the end surface of the first electro-conductive film.
摘要:
According to one embodiment, an information transfer apparatus for performing direct memory access (DMA) between a memory unit and an input/output device comprises a first port to form a first transfer path which performs DMA transfer of information between the memory and the input/output device via a general-purpose bus, a second port to form a second transfer path which directly performs DMA transfer of information between the memory unit and the input/output device no via the general-purpose bus, and a selecting unit to select the first transfer path and the second transfer path on the basis of control from the outside.
摘要:
To provide an electro-optical device, which has a high manufacturing yield and high quality display, the electro-optical device includes above a substrate, display electrodes, at least one of wiring lines and electronic elements that drive the display electrodes, and interlayer insulating films provided below the display electrodes to electrically insulate the display electrodes and at least one of the wiring lines and electronic elements from each other. At least one of the interlayer insulating films includes a boron phosphorus silicate glass film and has its top face subjected to planarizing treatment by being put into a fluidized state.