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公开(公告)号：US20090273281A1
公开(公告)日：2009-11-05
申请号：US12432850
申请日：2009-04-30
申请人： Minoru Niigaki , Toru Hirohata , Harumasa Yoshida , Hirofumi Kan
发明人： Minoru Niigaki , Toru Hirohata , Harumasa Yoshida , Hirofumi Kan
CPC分类号： H01J31/50 , H01J1/34 , H01J40/06 , H01J2231/5001
摘要： The photocathode of the present invention is provided with a supporting substrate composed of a single-crystal compound semiconductor, a light absorbing layer which is formed on the supporting substrate and smaller in an energy band gap than the supporting substrate to absorb incident light transmitted through the supporting substrate, thereby generating photoelectrons, and a surface layer which is formed on the light absorbing layer to lower a work function of the light absorbing layer, in which the supporting substrate comprises Al(1−x)GaxN (0≦X
摘要翻译： 本发明的光电阴极设置有由单晶化合物半导体构成的支撑基板，形成在支撑基板上的光吸收层，并且与支撑基板相比能量带隙更小，以吸收透过该基板的入射光 支撑基板，从而产生光电子;以及表面层，其形成在光吸收层上以降低光吸收层的功函数，其中支撑衬底包括Al（1-x）GaxN（0≤x≤1 ），并且光吸收层包括由选自Al，Ga和In以及N中的至少一种材料构成的化合物半导体。
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公开(公告)号：US08759837B2
公开(公告)日：2014-06-24
申请号：US13425887
申请日：2012-03-21
IPC分类号： H01L29/20
CPC分类号： C23C16/303 , C23C16/0272 , C23C16/042 , C30B25/183 , C30B29/403 , C30B29/406 , H01L21/02389 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/02647 , H01L33/007 , H01L33/12
摘要： A nitride semiconductor substrate is featured in comprising: a GaN semiconductor layer grown on a base layer, which has a substantially triangular cross-section along the thickness direction thereof, a periodic stripe shapes, and uneven surfaces arranged on the stripes inclined surfaces; and an overgrown layer composed of AlGaN or InAlGaN on the GaN semiconductor layer.
摘要翻译： 氮化物半导体衬底的特征在于包括：在基底层上生长的GaN半导体层，其沿其厚度方向具有基本上三角形的横截面，周期性条纹形状和布置在条状倾斜表面上的不平坦表面; 以及在GaN半导体层上由AlGaN或InAlGaN构成的杂色增长层。
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公开(公告)号：US20070176160A1
公开(公告)日：2007-08-02
申请号：US11340849
申请日：2006-01-27
IPC分类号： H01L29/06
摘要： A GaN-based semiconductor photocathode is applied to an electron tube. A GaN-based compound semiconductor layer is laterally grown on a substrate, and incorporated in the electron tube. The crystal defects of the compound semiconductor layer are reduced, whereby an electron tube which has inconceivably high sensitivity is realized.
摘要翻译： 将GaN基半导体光电阴极施加到电子管。 在基板上横向生长GaN基化合物半导体层，并且结合在电子管中。 化合物半导体层的晶体缺陷减少，从而实现了具有不可思议的高灵敏度的电子管。
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公开(公告)号：US08237194B2
公开(公告)日：2012-08-07
申请号：US12530067
申请日：2008-03-17
IPC分类号： H01L29/201
CPC分类号： C23C16/303 , C23C16/0272 , C23C16/042 , C30B25/183 , C30B29/403 , C30B29/406 , H01L21/02389 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/02647 , H01L33/007 , H01L33/12
摘要： A nitride semiconductor substrate is featured in comprising: a GaN semiconductor layer grown on a base layer, which has a substantially triangular cross-section along the thickness direction thereof, a periodic stripe shapes, and uneven surfaces arranged on the stripes inclined surfaces; and an overgrown layer composed of AlGaN or InAlGaN on the GaN semiconductor layer.
摘要翻译： 氮化物半导体衬底的特征在于包括：在基底层上生长的GaN半导体层，其沿其厚度方向具有基本上三角形的横截面，周期性条纹形状和布置在条状倾斜表面上的不平坦表面; 以及在GaN半导体层上由AlGaN或InAlGaN构成的杂色增长层。
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公开(公告)号：US20100102328A1
公开(公告)日：2010-04-29
申请号：US12530067
申请日：2008-03-17
IPC分类号： H01L29/201
CPC分类号： C23C16/303 , C23C16/0272 , C23C16/042 , C30B25/183 , C30B29/403 , C30B29/406 , H01L21/02389 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/02647 , H01L33/007 , H01L33/12
摘要： A nitride semiconductor substrate is featured in comprising: a GaN semiconductor layer grown on a base layer, which has a substantially triangular cross-section along the thickness direction thereof, a periodic stripe shapes, and uneven surfaces arranged on the stripes inclined surfaces; and an overgrown layer composed of AlGaN or InAlGaN on the GaN semiconductor layer.
摘要翻译： 氮化物半导体衬底的特征在于包括：在基底层上生长的GaN半导体层，其沿其厚度方向具有基本上三角形的横截面，周期性条纹形状和布置在条状倾斜表面上的不平坦表面; 以及在GaN半导体层上由AlGaN或InAlGaN构成的杂色增长层。
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