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29 条记录 (耗时 0.036 秒)

    Systems and Methods for Switching Mode Power Amplifier Control
    7.
    发明申请
    Systems and Methods for Switching Mode Power Amplifier Control 有权
    开关模式功率放大器控制系统与方法

    公开(公告)号：US20090309661A1

    公开(公告)日：2009-12-17

    申请号：US12138965

    申请日：2008-06-13

    申请人： Jaejoon Chang ,  Ki Seok Yang ,  Kyu Hwan An ,  Wangmyong Woo ,  Chang-Ho Lee ,  Younsuk Kim ,  Hyogun Bae ,  Kijoong Kim ,  Shinichi Iizuka

    发明人： Jaejoon Chang ,  Ki Seok Yang ,  Kyu Hwan An ,  Wangmyong Woo ,  Chang-Ho Lee ,  Younsuk Kim ,  Hyogun Bae ,  Kijoong Kim ,  Shinichi Iizuka

    IPC分类号： H03G3/30

    CPC分类号： H03F1/0272 ,  H03F3/24 ,  H03F2200/408 ,  H03F2200/411 ,  H03F2200/462

    摘要： Embodiments of the invention may provide for enhancement systems and methods for a power amplifier output control system. In an example embodiment, driver amplifier control may be provided in conjunction with power amplifier control to improve the power efficiency and/or dynamic range of the transmitter system. Furthermore, control over the driver amplifier may allow for relaxed power control slope, which may lessens the burden of digital to analog converters (DACs) in transmitter systems such as cellular transmitter systems. Also, systems and methods in accordance with example embodiments of the invention may provide a less sensitive solution to operational environment variations such as temperature, battery power voltage and implementation IC process.

    摘要翻译： 本发明的实施例可以提供用于功率放大器输出控制系统的增强系统和方法。 在示例实施例中，可以结合功率放大器控制来提供驱动器放大器控制，以提高发射机系统的功率效率和/或动态范围。 此外，对驱动放大器的控制可以允许松弛的功率控制斜率，这可以减轻诸如蜂窝发射机系统的发射机系统中的数模转换器（DAC）的负担。 而且，根据本发明的示例性实施例的系统和方法可以提供对诸如温度，电池电源电压和实施IC过程的操作环境变化的较不敏感的解决方案。

    Systems and methods for switching mode power amplifier control
    8.
    发明授权
    Systems and methods for switching mode power amplifier control 有权
    用于开关模式功率放大器控制的系统和方法

    公开(公告)号：US07768353B2

    公开(公告)日：2010-08-03

    申请号：US12138965

    申请日：2008-06-13

    申请人： Jaejoon Chang ,  Ki Seok Yang ,  Kyu Hwan An ,  Wangmyong Woo ,  Chang-Ho Lee ,  Younsuk Kim ,  Hyogun Bae ,  Kijoong Kim ,  Shinichi Iizuka

    发明人： Jaejoon Chang ,  Ki Seok Yang ,  Kyu Hwan An ,  Wangmyong Woo ,  Chang-Ho Lee ,  Younsuk Kim ,  Hyogun Bae ,  Kijoong Kim ,  Shinichi Iizuka

    IPC分类号： H03G3/10

    CPC分类号： H03F1/0272 ,  H03F3/24 ,  H03F2200/408 ,  H03F2200/411 ,  H03F2200/462

    摘要： Embodiments of the invention may provide for enhancement systems and methods for a power amplifier output control system. In an example embodiment, driver amplifier control may be provided in conjunction with power amplifier control to improve the power efficiency and/or dynamic range of the transmitter system. Furthermore, control over the driver amplifier may allow for relaxed power control slope, which may lessens the burden of digital to analog converters (DACs) in transmitter systems such as cellular transmitter systems. Also, systems and methods in accordance with example embodiments of the invention may provide a less sensitive solution to operational environment variations such as temperature, battery power voltage and implementation IC process.

    摘要翻译： 本发明的实施例可以提供用于功率放大器输出控制系统的增强系统和方法。 在示例实施例中，可以结合功率放大器控制来提供驱动器放大器控制，以提高发射机系统的功率效率和/或动态范围。 此外，对驱动器放大器的控制可以允许松弛的功率控制斜率，这可以减轻诸如蜂窝发射机系统的发射机系统中的数模转换器（DAC）的负担。 而且，根据本发明的示例性实施例的系统和方法可以提供对诸如温度，电池电源电压和实施IC过程的操作环境变化的较不敏感的解决方案。

    Systems, methods, and apparatuses for high power complementary metal oxide semiconductor (CMOS) antenna switches using body switching and substrate junction diode controlling in multistacking structure
    9.
    发明授权
    Systems, methods, and apparatuses for high power complementary metal oxide semiconductor (CMOS) antenna switches using body switching and substrate junction diode controlling in multistacking structure 有权
    在多层结构中使用体开关和衬底结二极管控制的大功率互补金属氧化物半导体（CMOS）天线开关的系统，方法和装置

    公开(公告)号：US07843280B2

    公开(公告)日：2010-11-30

    申请号：US11943378

    申请日：2007-11-20

    申请人： Minsik Ahn ,  Chang-Ho Lee ,  Jaejoon Chang ,  Wangmyong Woo ,  Haksun Kim ,  Joy Laskar

    发明人： Minsik Ahn ,  Chang-Ho Lee ,  Jaejoon Chang ,  Wangmyong Woo ,  Haksun Kim ,  Joy Laskar

    IPC分类号： H01P1/15 ,  H04B1/44

    CPC分类号： H03K17/693 ,  H03K17/102 ,  H03K2217/0018 ,  H04B1/48

    摘要： Embodiments of the invention may provide for a CMOS antenna switch, which may be referred to as a CMOS SPDT switch. The CMOS antenna switch may operate at a plurality of frequencies, perhaps around 900 MHz 1.9 GHz and 2.1 GHz according to an embodiment of the invention. The CMOS antenna switch may include both a receiver switch and a transmit switch. The receiver switch may utilize a multi-stack transistor with body substrate switching and source and body connection along with body floating technique to block high power signals from the transmit path by preventing channel formation of the device in OFF state as well as to maintain low insertion loss at the receiver path. Example embodiments of the CMOS antenna switch may provide for 35 dBm P 1 dB at both bands (e.g., 900 MHz and 1.9 GHz and 2.1 GHz). In addition, a −60 dBc second and third harmonic up to 28 dBm input power to the switch, may be obtained according to example embodiments of the invention.

    摘要翻译： 本发明的实施例可以提供可被称为CMOS SPDT开关的CMOS天线开关。 根据本发明的实施例，CMOS天线开关可以以多个频率操作，可能约为900MHz 1.9GHz和2.1GHz。 CMOS天线开关可以包括接收器开关和发送开关。 接收器开关可以利用具有主体衬底切换和源和体连接以及身体浮动技术的多堆叠晶体管，以通过防止器件在OFF状态下的通道形成以及保持低插入来阻止来自发射路径的高功率信号 在接收机路径损失。 CMOS天线开关的示例实施例可以在两个频带（例如，900MHz和1.9GHz和2.1GHz）处提供35dBm的P 1dB。 此外，根据本发明的示例性实施例，可以获得高达28dBm的输入功率对于开关的-60dBc的二次和三次谐波。

    Systems, Methods, and Apparatuses for Complementary Metal Oxide Semiconductor (CMOS) Antenna Switches Using Body Switching in Multistacking Structure
    10.
    发明申请
    Systems, Methods, and Apparatuses for Complementary Metal Oxide Semiconductor (CMOS) Antenna Switches Using Body Switching in Multistacking Structure 有权
    使用多层结构中的主体切换的互补金属氧化物半导体（CMOS）天线开关的系统，方法和装置

    公开(公告)号：US20080079653A1

    公开(公告)日：2008-04-03

    申请号：US11857322

    申请日：2007-09-18

    申请人： Minsik Ahn ,  Chang-Ho Lee ,  Changhyuk Cho ,  Jaejoon Chang ,  Wangmyong Woo ,  Haksun Kim ,  Joy Laskar

    发明人： Minsik Ahn ,  Chang-Ho Lee ,  Changhyuk Cho ,  Jaejoon Chang ,  Wangmyong Woo ,  Haksun Kim ,  Joy Laskar

    IPC分类号： H03K17/687 ,  H01Q1/00

    CPC分类号： H03K17/693 ,  H03K17/063 ,  H03K17/102 ,  H03K2217/0018 ,  H04B1/48

    摘要： Embodiments of the invention may provide for a CMOS antenna switch, which may be referred to as a CMOS SP4T switch. The CMOS antenna switch may operate at a plurality of frequencies, perhaps around 900 MHz and 1.9 GHz according to an embodiment of the invention. The CMOS antenna switch may include both a receiver switch and a transmit switch. The receiver switch may utilize a multi-stack transistor with body substrate tuning to block high power signals from the transmit path as well as to maintain low insertion loss at the receiver path. On the other hand, in the transmit switch, a body substrate tuning technique may be applied to maintain high power delivery to the antenna. Example embodiments of the CMOS antenna switch may provide for 31 dBm P 1 dB at both bands (e.g., 900 MHz and 1.8 GHz). In addition, a 0.9 dB and −1.1 dB insertion loss at 900 MHz and 1.9 GHz, respectively, may be obtained according to example embodiments of the invention.

    摘要翻译： 本发明的实施例可以提供CMOS天线开关，其可以被称为CMOS SP4T开关。 根据本发明的实施例，CMOS天线开关可以以多个频率操作，可能大约在900MHz和1.9GHz。 CMOS天线开关可以包括接收器开关和发送开关。 接收器开关可以利用具有主体衬底调谐的多层晶体管来阻挡来自发射路径的高功率信号以及在接收器路径处保持低的插入损耗。 另一方面，在发送开关中，可以应用主体衬底调谐技术来保持对天线的高功率输送。 CMOS天线开关的示例实施例可以在两个频带（例如，900MHz和1.8GHz）处提供31dBm的P 1 dB。 此外，根据本发明的示例实施例，可以分别获得在900MHz和1.9GHz处的0.9dB和-1.1dB的插入损耗。