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公开(公告)号：US20210296462A1
公开(公告)日：2021-09-23
申请号：US17070617
申请日：2020-10-14
发明人： Daisuke HIRATA , Akihisa YAMAMOTO
IPC分类号： H01L29/423 , H01L29/49
摘要： A semiconductor apparatus including a bonding region in which a wire is bonded, includes: a semiconductor substrate; an oxide film provided on a principal surface of the semiconductor substrate in the bonding region; a polysilicon layer provided on the oxide film; an interlayer film partially provided on the polysilicon layer; a barrier metal directly provided on the polysilicon layer and the interlayer film; and an electrode provided on the barrier metal.
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2.发明申请公开(公告)号：US20170338812A1
公开(公告)日：2017-11-23
申请号：US15377390
申请日：2016-12-13
发明人： Kazuya HOKAZONO , Akihisa YAMAMOTO , Dong WANG
IPC分类号： H03K17/284 , H03K17/18 , H03K17/08 , H03K17/22 , H02H3/247
CPC分类号： H03K17/284 , H02H3/247 , H02M1/08 , H02M1/38 , H03K17/08 , H03K17/162 , H03K17/18 , H03K17/223
摘要： A delay-time correction circuit delays an input signal for generating a pre-drive signal to a drive unit generating a drive signal. A transition-change sensor senses a transition change in one of a turn-on operation and turn-off operation. A correction-signal generator generates a correction signal in response to the transition change sensed by the transition-change sensor and to the input signal. A delay output unit generates an output signal corresponding to the pre-drive signal by delaying the input signal using the correction signal. The delay output unit delays the output signal that instructs the other of a turn-on operation and turn-off operation, from the input signal, in accordance with a length of a period for the transition change in the one of a turn-on operation and turn-off operation that is performed immediately before the other of a turn-on operation and turn-off operation.
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公开(公告)号：US20230137944A1
公开(公告)日：2023-05-04
申请号：US17736514
申请日：2022-05-04
发明人： Yo HABU , Akihisa YAMAMOTO
IPC分类号： H03K17/567 , H02M1/088 , H02M7/537 , H03K17/687
摘要： A semiconductor device includes: a P-side driving circuit and an N-side driving circuit respectively driving a P-side switching device and an N-side switching device which are connected to configure a half bridge; and a N-side power supply generation circuit generating a power supply voltage for the N-side driving circuit from a power supply voltage for the P-side switching device.
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公开(公告)号：US20180048302A1
公开(公告)日：2018-02-15
申请号：US15557136
申请日：2015-06-22
发明人： Kazuya HOKAZONO , Akihisa YAMAMOTO , Dong WANG
IPC分类号： H03K17/08 , H03K3/011 , H03K17/284
CPC分类号： H03K17/08 , H02M1/00 , H02M1/08 , H03K3/011 , H03K17/0828 , H03K17/127 , H03K17/284 , H03K2017/0806
摘要： A drive circuit includes one constant voltage circuit for generating a first voltage and a second voltage, a first output circuit connected to the constant voltage circuit to receive the first voltage and the second voltage and receive a gate drive signal, a second output circuit connected to the constant voltage circuit to receive the first voltage and the second voltage and receive the gate drive signal, a first terminal connected to an output of the first output circuit, and a second terminal connected to an output of the second output circuit, wherein a voltage generated by the constant voltage circuit is applied to a plurality of semiconductor switching elements connected in parallel during switching.
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公开(公告)号：US20170237436A1
公开(公告)日：2017-08-17
申请号：US15504446
申请日：2014-12-17
发明人： Kazuya HOKAZONO , Akihisa YAMAMOTO , Dong WANG
IPC分类号： H03K19/0175 , H03K17/687 , H03K5/22
CPC分类号： H03K19/017509 , H03K5/22 , H03K17/063 , H03K17/08122 , H03K17/687 , H03K19/0185 , H03K2217/0063
摘要： A primary circuit outputs, in response to an input signal, a first signal with a first reference potential. A level shift main circuit converts the reference potential of the first signal received from the primary circuit to a second reference potential to output a second signal with the second reference potential. A secondary circuit generates an output signal with the second reference potential using the second signal. At least one rectifying element circuit is provided between the primary circuit and the secondary circuit. At least one of the primary circuit and the secondary circuit includes at least one detection circuit detecting a change in a current flowing through the rectifying element circuit to determine whether a potential corresponding to the second reference potential is lower than or equal to a potential corresponding to the first reference potential.
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公开(公告)号：US20160118979A1
公开(公告)日：2016-04-28
申请号：US14785725
申请日：2013-07-16
发明人： Kazuya HOKAZONO , Akihisa YAMAMOTO , Dong WANG
IPC分类号： H03K17/60 , H03K19/0175
CPC分类号： H03K17/60 , H02M2001/0038 , H03K17/165 , H03K19/017509 , H03K2217/0063 , H03K2217/0072
摘要： A primary circuit produces a first on-pulse and a first off-pulse synchronized with a rising edge and a falling edge of an input signal, respectively. A level shift circuit produces a second on-pulse and a second off-pulse formed by shifting the voltage level of the first on-pulse the first off-pulse, respectively. A secondary circuit outputs an output pulse rising and falling in synchronization with the second on-pulse and the second off-pulse, and holds the output when both of the pulses are high. When the reference potential rises, the pulse corresponding to the state of the input signal during the rise of the second potential in the first on-pulse and the first off-pulse is regenerated and one of the second on-pulse and the second off-pulse is thereby made high after the end of the rise of the second reference potential to retransmit the state of the input signal.
摘要翻译： 主电路分别产生与输入信号的上升沿和下降沿同步的第一导通脉冲和第一截止脉冲。 电平移位电路分别通过使第一导通脉冲的电压电平分别移位第一截止脉冲而形成第二导通脉冲和第二截止脉冲。 次级电路输出与第二导通脉冲和第二截止脉冲同步的上升和下降的输出脉冲，并且当两个脉冲都为高电平时保持输出。 当参考电位上升时，在第一导通脉冲和第一截止脉冲中的第二电位升高期间对应于输入信号的状态的脉冲被再生，并且第二导通脉冲和第二导通脉冲之一， 因此，在第二参考电位上升结束之后，脉冲变高，以重新输入输入信号的状态。
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公开(公告)号：US20240203830A1
公开(公告)日：2024-06-20
申请号：US18471561
申请日：2023-09-21
发明人： Masanori TSUKUDA , Akihisa YAMAMOTO , Tatsuya KAWASE , Masaki SUDO , Shinya SONEDA , Hidenori FUJII , Tomohide TERASHIMA , Takaya NOGUCHI
IPC分类号： H01L23/48 , H01L27/02 , H01L27/07 , H01L29/739
CPC分类号： H01L23/481 , H01L27/0248 , H01L27/0727 , H01L29/7397
摘要： A semiconductor device includes: a first control electrode and a second control electrode for switching that are formed in a first main surface and a second main surface, respectively, of a semiconductor substrate; a first control electrode pad electrically connected to the first control electrode; a first through-via penetrating the semiconductor substrate in a thickness direction and including a conductor electrically connecting the first main surface to the second main surface; and a second control electrode pad formed on the first main surface and electrically connected to the second control electrode through the first through-via.
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公开(公告)号：US20220173733A1
公开(公告)日：2022-06-02
申请号：US17411648
申请日：2021-08-25
发明人： Yo HABU , Akihisa YAMAMOTO
IPC分类号： H03K17/567
摘要： The object is to provide a technology enabling appropriate driving of an IGBT. A driving circuit is a driving circuit that drives an IGBT by controlling the gate voltage of the IGBT, and includes a first charging capability and a second charging capability. The first charging capability increases the gate voltage up to a threshold voltage of the IGBT, and a second charging capability increases the gate voltage beyond the threshold voltage. An increase in the gate voltage with the first charging capability per unit time is higher than an increase in the gate voltage with the second charging capability per unit time.
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公开(公告)号：US20200169253A1
公开(公告)日：2020-05-28
申请号：US16582272
申请日：2019-09-25
发明人： Mitsutaka HANO , Akihisa YAMAMOTO
摘要： A semiconductor device includes a first drive circuit and a bootstrap control circuit. When a voltage VB is equal to or smaller than a power supply voltage VCC, the boost control circuit turns on a MOSFET by controlling a gate signal input to a gate terminal, and a back gate control circuit makes a voltage applied to a back gate terminal smaller than the voltage VB.
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公开(公告)号：US20180205373A1
公开(公告)日：2018-07-19
申请号：US15741079
申请日：2015-12-10
发明人： Kazuya HOKAZONO , Akihisa YAMAMOTO , Dong WANG
IPC分类号： H03K17/0812 , H03K17/16
CPC分类号： H03K17/08122 , H02M1/08 , H03K5/003 , H03K17/08128 , H03K17/163 , H03K17/168 , H03K2217/0027
摘要： A semiconductor device driving circuit includes: a signal transmission circuit including a first level shift circuit, the signal transmission circuit and an unsaturated voltage detection circuit configured to output a first error signal when an unsaturated voltage of a semiconductor switching element driven by the drive signal is detected. The semiconductor device driving circuit generates a second error signal having the second voltage level by level-shifting the first error signal or a converted signal obtained by converting the first error signal into a pulse signal. The semiconductor device driving circuit further includes a soft shutdown circuit configured to change a drive signal for the semiconductor switching element to softly shut down the semiconductor switching element when the second error signal is input.
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