公开(公告)号：US20240355874A1

公开(公告)日：2024-10-24

申请号：US18685521

申请日：2021-10-14

申请人： Mitsubishi Electric Corporation

发明人： Atsufumi INOUE ,  Tetsu NEGISHI ,  Tsuyoshi KAWAKAMI ,  Tomohiro TAMAKI

IPC分类号： H01L29/06 ,  H01L21/02 ,  H01L21/285 ,  H01L21/3205 ,  H01L23/36 ,  H01L29/16 ,  H01L29/20 ,  H01L29/24 ,  H01L29/739 ,  H01L29/78

CPC分类号： H01L29/0653 ,  H01L21/02118 ,  H01L21/02345 ,  H01L21/32051 ,  H01L23/36 ,  H01L21/28506 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/24 ,  H01L29/7395 ,  H01L29/7827

摘要： A semiconductor apparatus includes: a semiconductor substrate; a first surface electrode on the substrate and a second surface electrode formed separately and insulated from the first surface electrode; an electroconductive layer formed between the electrodes with a space from the electrodes; an insulating layer formed to cover the electroconductive layer, a surface between the electrodes, and an end portion of each electrode on a side close to the electroconductive layer; a short-circuit prevention layer having an insulating property formed to cover the insulating layer between the electrodes and the electroconductive layer, the short-circuit prevention layer having a thickness equal to or larger than a height of the electroconductive layer and being made of a material different from that of the insulating layer; a metal plating layer formed on the electrodes; and a reverse-surface electrode on the opposite surface of the substrate, thereby being capable of preventing the electrodes from short-circuiting.

公开(公告)号：US20210343854A1

公开(公告)日：2021-11-04

申请号：US17279585

申请日：2018-12-05

申请人： Mitsubishi Electric Corporation

发明人： Atsufumi INOUE ,  Tatsuro WATAHIKI ,  Kengo MATSUFUJI ,  Kojiro HARA

IPC分类号： H01L29/45 ,  H01L29/739 ,  H01L29/40 ,  H01L29/66

摘要： An object is to provide a semiconductor device that can prevent organic contamination of an electrode including a plurality of laminated metal layers. A semiconductor device includes: a semiconductor substrate; and an electrode including a plurality of layers laminated on a principal surface of the semiconductor substrate. The electrode includes: a first metal layer in contact with the principal surface of the semiconductor substrate, the first metal layer containing Al; an oxide layer formed on a surface of the first metal layer, the oxide layer containing a metal and oxygen; and a second metal layer formed on a surface of the oxide layer. Concentrations of the oxygen in the oxide layer are higher than or equal to 8.0×1021/cm3 and lower than or equal to 4.0×1022/cm3.

公开(公告)号：US20190058037A1

公开(公告)日：2019-02-21

申请号：US16081140

申请日：2016-12-21

申请人： Mitsubishi Electric Corporation

发明人： Atsufumi INOUE ,  Seiji OKA ,  Tsuyoshi KAWAKAMI ,  Akihiko FURUKAWA ,  Hidetada TOKIOKA ,  Mutsumi TSUDA ,  Yasushi FUJIOKA

IPC分类号： H01L29/06 ,  H01L29/66 ,  H01L29/739 ,  H01L29/16 ,  H01L29/20 ,  H01L23/00

CPC分类号： H01L29/0696 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/48 ,  H01L23/522 ,  H01L24/26 ,  H01L29/12 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/66325 ,  H01L29/739 ,  H01L29/7393 ,  H01L29/78 ,  H01L2924/01028 ,  H01L2924/01079 ,  H01L2924/3511

摘要： A power semiconductor device includes an emitter electrode disposed on a semiconductor substrate and through which a main current flows, a conductive layer that is disposed on the emitter electrode and is not a sintered compact, and a sintered metal layer that is disposed on the conductive layer and is a sintered compact. The sintered metal layer has a size to cover all the emitter electrode in plan view, and has higher heat conductivity than the conductive layer. The power semiconductor device can improve heat dissipation performance and adhesion.