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    SEMICONDUCTOR APPARATUS AND METHOD FOR MANUFACTURING THE SAME
    1.
    发明申请
    SEMICONDUCTOR APPARATUS AND METHOD FOR MANUFACTURING THE SAME 审中-公开

    公开(公告)号：US20200058733A1

    公开(公告)日：2020-02-20

    申请号：US16092409

    申请日：2017-04-24

    申请人： Mitsubishi Electric Corporation

    发明人： Tetsu NEGISHI ,  Shoichi KUGA

    IPC分类号： H01L29/06 ,  H01L23/29 ,  H01L23/31 ,  H01L29/739

    摘要： A semiconductor apparatus includes a power semiconductor device, a resin film and a sealing insulating material. The power semiconductor device includes: a first electrode covering a first region on one main surface of the semiconductor substrate; a second electrode formed on the other main surface of the semiconductor substrate; a guard ring formed in a second region outer than the first region; and a non-conductive inorganic film located in the second region and covering the guard ring. The resin film overlaps the guard ring in a plan view, and the resin film on the non-conductive inorganic film has a thickness of 35 μm or more. The resin film is a film of a single layer, and the resin film has an outermost edge in the form of a downwardly spreading fillet. The outermost edge of the resin film is inner than an outermost edge of the semiconductor substrate.

    SEMICONDUCTOR MODULE AND POWER CONVERSION DEVICE
    2.
    发明申请
    SEMICONDUCTOR MODULE AND POWER CONVERSION DEVICE 审中-公开

    公开(公告)号：US20200185359A1

    公开(公告)日：2020-06-11

    申请号：US16632029

    申请日：2018-08-27

    申请人： Mitsubishi Electric Corporation

    发明人： Junichi NAKASHIMA ,  Shota MORISAKI ,  Yoshiko TAMADA ,  Yasushi NAKAYAMA ,  Tetsu NEGISHI ,  Ryo TSUDA ,  Yukimasa HAYASHIDA ,  Ryutaro DATE

    IPC分类号： H01L25/07 ,  H01L23/00

    摘要： Gates of a plurality of semiconductor switching elements are electrically connected to a common gate control pattern by gate wires. Sources of the plurality of semiconductor switching elements are electrically connected to a common source control pattern by source wires. The gate control pattern is disposed to interpose the source control pattern between the gate control pattern and each of the plurality of semiconductor switching elements that are connected in parallel and that operate in parallel. Hence, each of the gate wires becomes longer than each of the source wires, and has an inductance larger than the source wire. Accordingly, gate oscillation is reduced or suppressed in the plurality of semiconductor switching elements that are connected in parallel and that operate in parallel.

    POWER MODULE AND POWER CONVERSION DEVICE
    3.
    发明申请
    POWER MODULE AND POWER CONVERSION DEVICE 有权

    公开(公告)号：US20220415747A1

    公开(公告)日：2022-12-29

    申请号：US17780519

    申请日：2019-12-26

    申请人： Mitsubishi Electric Corporation

    发明人： Yoshinori YOKOYAMA ,  Tetsu NEGISHI ,  Koji YAMAZAKI

    IPC分类号： H01L23/367 ,  H01L23/053 ,  H05K3/32

    摘要： A power module is obtained in which the thermal resistance in the range from a semiconductor device to a base plate is reduced and the stress in the joining portion is relieved. The power module includes at least one semiconductor device, an insulating substrate having an insulating layer, a circuit layer provided on an upper surface of the insulating layer and a metal layer provided on a lower surface of the insulating layer, and a sintering joining member with an upper surface larger in outer circumference than a back surface of the at least one semiconductor device, to join together the back surface of the at least one semiconductor device and an upper surface of the circuit layer on an upper-surface side of the insulating layer.

    2-IN-1 TYPE CHOPPER MODULE
    5.
    发明申请
    2-IN-1 TYPE CHOPPER MODULE 审中-公开

    公开(公告)号：US20200343226A1

    公开(公告)日：2020-10-29

    申请号：US16630822

    申请日：2017-09-28

    申请人： Mitsubishi Electric Corporation

    发明人： Shigeru HASEGAWA ,  Tetsu NEGISHI

    IPC分类号： H01L25/07 ,  H01L23/498 ,  H01L29/872 ,  H01L29/739 ,  H02M7/537

    摘要： An object of the present invention is to suppress reduction in a temperature cycle life of a wiring in a two-in-one type chopper module. A two-in-one type chopper module according to the present invention includes: a switching transistor; a first diode inverse-parallelly connected to the switching transistor; a second diode serially connected to the switching transistor and the first diode; a first wiring pattern mounting the switching transistor and the first diode; and a second wiring pattern mounting the second diode, wherein each of the switching transistor and the first diode has a power loss substantially identical with each other at a time of a forward direction current conduction, and an effective area of the second diode is larger than an effective area of the first diode.

    SEMICONDUCTOR DEVICE
    6.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号：US20170033028A1

    公开(公告)日：2017-02-02

    申请号：US15303987

    申请日：2015-03-17

    申请人： Mitsubishi Electric Corporation

    发明人： Tetsu NEGISHI ,  Mamoru TERAI ,  Kei YAMAMOTO

    IPC分类号： H01L23/31 ,  H01L23/373 ,  H01L21/02 ,  H01L23/29 ,  H01L29/16

    CPC分类号： H01L23/3171 ,  H01L21/02164 ,  H01L21/02271 ,  H01L23/29 ,  H01L23/291 ,  H01L23/293 ,  H01L23/3121 ,  H01L23/3135 ,  H01L23/3192 ,  H01L23/373 ,  H01L23/562 ,  H01L29/1608 ,  H01L2224/73265

    摘要： A semiconductor device includes: a semiconductor element which includes semiconductor substrate, an insulating film formed on a front surface of the semiconductor substrate and having an opening, and an electrode formed in the opening on the front surface of the semiconductor substrate; and a first protective film disposed to cover the semiconductor element. The insulating film has a thickness of not less than 1/500 of a thickness of the semiconductor substrate and not more than 4 μm. The insulating film has a compressive stress per film thickness of not less than 100 MPa/μm.

    摘要翻译： 半导体器件包括：半导体元件，其包括半导体衬底，形成在半导体衬底的前表面上并具有开口的绝缘膜，以及形成在半导体衬底的前表面上的开口中的电极; 以及设置成覆盖半导体元件的第一保护膜。 该绝缘膜的厚度为半导体基板的厚度的1/500以上且4μm以下。 绝缘膜具有不小于100MPa /μm的膜厚度的压缩应力。