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公开(公告)号：US11456576B2
公开(公告)日：2022-09-27
申请号：US16927950
申请日：2020-07-13
发明人： Hitoshi Sakuma , Kazumasa Kishimoto
摘要： A method for manufacturing an optical semiconductor device having a ridge stripe configuration containing an active layer and current blocking layers which embed both sides of the ridge stripe configuration, comprises steps of forming a mask of an insulating film on a surface of a semiconductor layer containing an active layer, forming a ridge stripe configuration by etching a semiconductor layer using gas containing SiCl4, removing an oxide layer with regard to a Si based residue which is attached on a surface which is etched of the ridge stripe configuration which is formed and removing a Si based residue whose oxide layer is removed.
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公开(公告)号：US11870212B2
公开(公告)日：2024-01-09
申请号：US16963054
申请日：2018-03-28
发明人： Kazumasa Kishimoto , Naoki Nakamura
CPC分类号： H01S5/0208 , H01S5/04256 , H01S5/04257 , H01S5/12 , H01S5/2275 , H01S5/0283 , H01S5/2224
摘要： A mesa (34) includes a resonator and a second conductivity type contact layer (24). Grooves (32) are provided on both sides of the mesa (34). The first conductivity type contact layer (12) and a side face of the mesa (34) including an end face of the resonator construct an L shape (50). The first conductivity type contact layer (12) constructs bottom surfaces of the L shape (50) and the grooves (32). A side face of the groove (32) includes a slope (38) near the bottom surface (46) and a side face (42) above. A side face of the L shape (50) includes a slope (40) near the bottom surface (48) and a side face (44) above. A first electrode (28) is connected to the first conductivity type contact layer (12) at the bottom surface (46) of the groove (32). A second electrode (30) is connected to the second conductivity type contact layer (24) above the mesa (34).
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公开(公告)号：US09184566B2
公开(公告)日：2015-11-10
申请号：US14530873
申请日：2014-11-03
发明人： Kazumasa Kishimoto
CPC分类号： H01S5/2275 , H01S5/0207 , H01S5/2086 , H01S5/209 , H01S5/2222
摘要： A method for manufacturing a semiconductor laser element includes forming an etching end point detection layer on part of a substrate, forming an substrate exposed portion and forming a lower cladding layer, an active layer, and an upper cladding layer on the etching end point detection layer and on the exposed portion, forming an insulating film pattern at a distance corresponding to a clearance region, from directly above a boundary between the substrate exposed portion and the etching end point detection layer, etching the upper clad layer, the active layer, and the lower cladding layer using the insulating film pattern as a mask and stopping etching at a time when the etching end point detection layer is exposed or after a predetermined time duration after the time.
摘要翻译： 一种半导体激光元件的制造方法，在基板的一部分上形成刻蚀终点检测层，在蚀刻终点检测层上形成基板露出部，形成下包层，有源层和上包覆层 并且在暴露部分上形成距离对应于间隙区域的距离处的绝缘膜图案，从衬底暴露部分和蚀刻终点检测层之间的边界的正上方蚀刻上覆盖层，有源层和 使用绝缘膜图案作为掩模的下包层，并且在蚀刻终点检测层暴露时或在时间之后的预定持续时间之后停止蚀刻。
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公开(公告)号：US20150180198A1
公开(公告)日：2015-06-25
申请号：US14530873
申请日：2014-11-03
发明人： Kazumasa Kishimoto
CPC分类号： H01S5/2275 , H01S5/0207 , H01S5/2086 , H01S5/209 , H01S5/2222
摘要： A method for manufacturing a semiconductor laser element includes forming an etching end point detection layer on part of a substrate, forming an substrate exposed portion and forming a lower cladding layer, an active layer, and an upper cladding layer on the etching end point detection layer and on the exposed portion, forming an insulating film pattern at a distance corresponding to a clearance region, from directly above a boundary between the substrate exposed portion and the etching end point detection layer, etching the upper clad layer, the active layer, and the lower cladding layer using the insulating film pattern as a mask and stopping etching at a time when the etching end point detection layer is exposed or after a predetermined time duration after the time.
摘要翻译： 一种半导体激光元件的制造方法，在基板的一部分上形成刻蚀终点检测层，在蚀刻终点检测层上形成基板露出部，形成下包层，有源层和上包覆层 并且在暴露部分上形成距离对应于间隙区域的距离处的绝缘膜图案，从衬底暴露部分和蚀刻终点检测层之间的边界的正上方蚀刻上覆盖层，有源层和 使用绝缘膜图案作为掩模的下包层，并且在蚀刻终点检测层暴露时或在时间之后的预定持续时间之后停止蚀刻。
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