公开(公告)号：US11271352B2

公开(公告)日：2022-03-08

申请号：US16442755

申请日：2019-06-17

申请人： Mitsubishi Electric Corporation

发明人： Yoshiaki Takewaki ,  Yoshihisa Uchida ,  Yo Tanaka

IPC分类号： H01R43/02 ,  H01L23/498 ,  H01R12/51 ,  H01R4/02 ,  H02M7/5387 ,  H05K1/18 ,  H05K1/09 ,  H05K3/32 ,  H02M1/08 ,  H01L29/739

摘要： The object is to provide a technology capable of increasing the reliability of a power semiconductor device. A power semiconductor device includes: a substrate including an insulating layer and a circuit pattern that are disposed in this order; a power semiconductor element electrically connected to the circuit pattern; and an electrode terminal having a thinned portion including a welded portion welded to the circuit pattern by a fiber laser. A thickness of the circuit pattern is not less than 0.2 and not more than 0.5 mm, and a thickness of the thinned portion of the electrode terminal is not less than one time and not more than two times the thickness of the circuit pattern.

公开(公告)号：US09818716B2

公开(公告)日：2017-11-14

申请号：US15324085

申请日：2015-10-09

申请人： MITSUBISHI ELECTRIC CORPORATION

发明人： Junji Fujino ,  Yoshihisa Uchida ,  Shohei Ogawa ,  Soichi Sakamoto ,  Tatsunori Yanagimoto

IPC分类号： H01L23/48 ,  H01L23/00

CPC分类号： H01L24/45 ,  H01L23/48 ,  H01L24/09 ,  H01L24/33 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/05552 ,  H01L2224/05647 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29123 ,  H01L2224/29124 ,  H01L2224/32225 ,  H01L2224/34 ,  H01L2224/37124 ,  H01L2224/37599 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/48491 ,  H01L2224/48647 ,  H01L2224/49111 ,  H01L2224/49113 ,  H01L2224/49433 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2924/00014 ,  H01L2924/2076 ,  H01L2224/05599 ,  H01L2224/45099 ,  H01L2924/00012

摘要： A power module is fabricated, employing a clad metal that is formed by pressure-laminating aluminum and copper, in such a manner that the aluminum layer of the clad metal is bonded such as by ultrasonic bonding to the surface electrode of the power semiconductor chip and a wire is bonded to the copper layer thereof to establish electrical circuit. The clad metal is thermally treated in advance at a temperature higher than the operating temperature of the power semiconductor chip to sufficiently form intermetallic compounds at the interface between the aluminum layer and the copper layer for the intermetallic compounds so as not to grow in thickness after the bonding processes.