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公开(公告)号：US20190019738A1
公开(公告)日：2019-01-17
申请号：US16132956
申请日：2018-09-17
IPC分类号： H01L23/367 , H01Q9/28 , H01Q1/22 , H01Q1/02 , H01L25/18 , H01L25/07 , H01L23/66 , H01L23/552 , H05K1/02 , H01L21/48 , H01L23/36 , H05K7/20 , H01L23/427
CPC分类号： H01L23/367 , H01L21/486 , H01L23/36 , H01L23/3675 , H01L23/427 , H01L23/552 , H01L23/66 , H01L25/072 , H01L25/18 , H01L2223/6677 , H01L2224/48091 , H01L2224/48247 , H01L2924/1423 , H01L2924/16152 , H01Q1/02 , H01Q1/2283 , H01Q9/285 , H05K1/0206 , H05K7/20 , H01L2924/00014
摘要： A high frequency module improved in heat dissipation performance includes: a dielectric multilayer substrate including a ground layer and a high frequency electronic component mounted thereon while being in contact with the ground layer, the high frequency electronic component including a heat generating portion; and a cutoff block formed of an upstanding wall portion and a cover portion covering the upstanding wall portion, the cutoff block housing the high frequency electronic component and including a hollow portion having a cutoff characteristic at a frequency of a high frequency signal used by the high frequency electronic component, and the upstanding wall portion of the cutoff block being in contact with the ground layer of the dielectric multilayer substrate.
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公开(公告)号：US10109552B2
公开(公告)日：2018-10-23
申请号：US15504240
申请日：2015-08-25
IPC分类号： H05K1/02 , H01L23/367 , H01L21/48 , H01Q9/28
摘要： A high frequency module improved in heat dissipation performance includes: a dielectric multilayer substrate including a ground layer and a high frequency electronic component mounted thereon while being in contact with the ground layer, the high frequency electronic component including a heat generating portion; and a cutoff block formed of an upstanding wall portion and a cover portion covering the upstanding wall portion, the cutoff block housing the high frequency electronic component and including a hollow portion having a cutoff characteristic at a frequency of a high frequency signal used by the high frequency electronic component, and the upstanding wall portion of the cutoff block being in contact with the ground layer of the dielectric multilayer substrate.
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公开(公告)号：US10468323B2
公开(公告)日：2019-11-05
申请号：US16132956
申请日：2018-09-17
IPC分类号： H05K1/02 , H01L23/367 , H01L23/36 , H05K7/20 , H01Q9/28 , H01L23/552 , H01L23/66 , H01L25/07 , H01L25/18 , H01Q1/02 , H01Q1/22 , H01L23/427 , H01L21/48
摘要： A high frequency module improved in heat dissipation performance includes: a dielectric multilayer substrate including a ground layer and a high frequency electronic component mounted thereon while being in contact with the ground layer, the high frequency electronic component including a heat generating portion; and a cutoff block formed of an upstanding wall portion and a cover portion covering the upstanding wall portion, the cutoff block housing the high frequency electronic component and including a hollow portion having a cutoff characteristic at a frequency of a high frequency signal used by the high frequency electronic component, and the upstanding wall portion of the cutoff block being in contact with the ground layer of the dielectric multilayer substrate.
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公开(公告)号：US09543898B2
公开(公告)日：2017-01-10
申请号：US14429040
申请日：2013-09-13
发明人： Yoshinori Tsuyama , Hiroyuki Nonomura , Hiroshi Otsuka , Hifumi Noto , Yoshinori Yasunaga , Mitsuhiro Shimozawa , Yuichi Fujimoto
CPC分类号： H03F1/0205 , H03F1/3205 , H03F3/19 , H03F3/245 , H03F3/601 , H03F2200/108 , H03F2200/12 , H03F2200/267 , H03F2200/391 , H03F2200/555
摘要： A microwave amplifier including: a bias circuit that includes a line having an electrical length of one quarter the wavelength at the frequency configured to be amplified by the microwave amplifier and being connected between the output terminal of an amplifier and a bias voltage source, and a capacitor connected between a terminal where the line is connected to the bias voltage source and a ground that defines the reference potential of the microwave amplifier; and a resonant circuit that includes a resistor and a capacitor connected in series between the ground and the terminal where the line is connected to the bias voltage source.
摘要翻译： 一种微波放大器，包括：偏置电路，其包括具有配置为由微波放大器放大并被连接在放大器的输出端和偏置电压源之间的频率的四分之一波长的线，以及 电容器连接在线路连接到偏置电压源的端子和限定微波放大器参考电位的地线之间; 以及谐振电路，其包括电阻器和串联连接在接地和端子之间的电容器，其中线路连接到偏置电压源。
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公开(公告)号：US20150222231A1
公开(公告)日：2015-08-06
申请号：US14429040
申请日：2013-09-13
发明人： Yoshinori Tsuyama , Hiroyuki Nonomura , Hiroshi Otsuka , Hifumi Noto , Yoshinori Yasunaga , Mitsuhiro Shimozawa , Yuichi Fujimoto
CPC分类号： H03F1/0205 , H03F1/3205 , H03F3/19 , H03F3/245 , H03F3/601 , H03F2200/108 , H03F2200/12 , H03F2200/267 , H03F2200/391 , H03F2200/555
摘要： A microwave amplifier including: a bias circuit that includes a line having an electrical length of one quarter the wavelength at the frequency configured to be amplified by the microwave amplifier and being connected between the output terminal of an amplifier and a bias voltage source, and a capacitor connected between a terminal where the line is connected to the bias voltage source and a ground that defines the reference potential of the microwave amplifier; and a resonant circuit that includes a resistor and a capacitor connected in series between the ground and the terminal where the line is connected to the bias voltage source.
摘要翻译： 一种微波放大器，包括：偏置电路，其包括具有配置为由微波放大器放大并被连接在放大器的输出端和偏置电压源之间的频率的四分之一波长的线，以及 电容器连接在线路连接到偏置电压源的端子和限定微波放大器参考电位的地线之间; 以及谐振电路，其包括电阻器和串联连接在接地和端子之间的电容器，其中线路连接到偏置电压源。
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