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    Semiconductor light emitting device
    1.
    发明授权
    Semiconductor light emitting device 有权
    半导体发光器件

    公开(公告)号：US09130127B2

    公开(公告)日：2015-09-08

    申请号：US13204082

    申请日：2011-08-05

    申请人： Hiroshi Katsuno ,  Yasuo Ohba ,  Satoshi Mitsugi ,  Shinji Yamada ,  Mitsuhiro Kushibe ,  Kei Kaneko

    发明人： Hiroshi Katsuno ,  Yasuo Ohba ,  Satoshi Mitsugi ,  Shinji Yamada ,  Mitsuhiro Kushibe ,  Kei Kaneko

    IPC分类号： H01L33/38 ,  H01L33/22

    CPC分类号： H01L33/382 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/385 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2933/0091 ,  H01L2924/00014

    摘要： According to one embodiment, a semiconductor light emitting device includes a stacked structure body, first and second electrodes. The stacked structure body includes first and second semiconductor layers and a light emitting layer provided between the second and first semiconductor layers, and has first and second major surfaces. The first electrode has a first contact part coming into contact with the first semiconductor layer. The second electrode has a part coming into contact with the second semiconductor layer. A surface of the first semiconductor layer on a side of the first major surface has a first part having a part overlapping a contact surface with the first semiconductor layer and a second part having a part overlapping the second semiconductor layer. The second part has irregularity. A pitch of the irregularity is longer than a peak wavelength of emission light. The first part has smaller irregularity than the second part.

    摘要翻译： 根据一个实施例，半导体发光器件包括堆叠结构体，第一和第二电极。 叠层结构体包括第一和第二半导体层以及设置在第二和第一半导体层之间的发光层，并且具有第一和第二主表面。 第一电极具有与第一半导体层接触的第一接触部分。 第二电极具有与第二半导体层接触的部分。 第一主表面一侧的第一半导体层的表面具有第一部分，其第一部分具有与第一半导体层的接触表面重叠的部分，第二部分具有与第二半导体层重叠的部分。 第二部分是不规律的。 不规则的间距比发光的峰值波长长。 第一部分具有比第二部分更小的不规则性。

    Semiconductor light-emitting device
    2.
    发明授权
    Semiconductor light-emitting device 有权
    半导体发光装置

    公开(公告)号：US08729583B2

    公开(公告)日：2014-05-20

    申请号：US12873670

    申请日：2010-09-01

    申请人： Hiroshi Katsuno ,  Yasuo Ohba ,  Mitsuhiro Kushibe ,  Kei Kaneko ,  Shinji Yamada

    发明人： Hiroshi Katsuno ,  Yasuo Ohba ,  Mitsuhiro Kushibe ,  Kei Kaneko ,  Shinji Yamada

    IPC分类号： H01L33/22

    CPC分类号： H01L33/382 ,  H01L33/22 ,  H01L33/405 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/19107 ,  H01L2924/00014

    摘要： According to one embodiment, a semiconductor light-emitting device includes a first semiconductor layer, a second semiconductor layer, a light-emitting layer, a third semiconductor layer and a first electrode. The first semiconductor layer of a first conductivity type has a first major surface provided with a first surface asperity. The second semiconductor layer of a second conductivity type is provided on an opposite side of the first semiconductor layer from the first major surface. The light-emitting layer is provided between the first and second semiconductor layers. The first semiconductor layer is disposed between a third semiconductor layer and the light-emitting layer. The third semiconductor layer has an impurity concentration lower than an impurity concentration of the first semiconductor layer, and includes an opening exposing the first surface asperity. The first electrode is in contact with the first surface asperity through the opening, and reflective to emission light emitted from the light-emitting layer.

    摘要翻译： 根据一个实施例，半导体发光器件包括第一半导体层，第二半导体层，发光层，第三半导体层和第一电极。 第一导电类型的第一半导体层具有设置有第一表面粗糙度的第一主表面。 第二导电类型的第二半导体层设置在第一半导体层与第一主表面相对的一侧上。 发光层设置在第一和第二半导体层之间。 第一半导体层设置在第三半导体层和发光层之间。 第三半导体层的杂质浓度低于第一半导体层的杂质浓度，并且包括露出第一表面粗糙度的开口。 第一电极通过开口与第一表面凹凸接触，并且反射到从发光层发射的发射光。

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    3.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    半导体发光器件

    公开(公告)号：US20120235168A1

    公开(公告)日：2012-09-20

    申请号：US13204082

    申请日：2011-08-05

    申请人： Hiroshi Katsuno ,  Yasuo Ohba ,  Satoshi Mitsugi ,  Shinji Yamada ,  Mitsuhiro Kushibe ,  Kei Kaneko

    发明人： Hiroshi Katsuno ,  Yasuo Ohba ,  Satoshi Mitsugi ,  Shinji Yamada ,  Mitsuhiro Kushibe ,  Kei Kaneko

    IPC分类号： H01L33/40

    CPC分类号： H01L33/382 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/385 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2933/0091 ,  H01L2924/00014

    摘要： According to one embodiment, a semiconductor light emitting device includes a stacked structure body, first and second electrodes. The stacked structure body includes first and second semiconductor layers and a light emitting layer provided between the second and first semiconductor layers, and has first and second major surfaces. The first electrode has a first contact part coming into contact with the first semiconductor layer. The second electrode has a part coming into contact with the second semiconductor layer. A surface of the first semiconductor layer on a side of the first major surface has a first part having a part overlapping a contact surface with the first semiconductor layer and a second part having a part overlapping the second semiconductor layer. The second part has irregularity. A pitch of the irregularity is longer than a peak wavelength of emission light. The first part has smaller irregularity than the second part.

    摘要翻译： 根据一个实施例，半导体发光器件包括堆叠结构体，第一和第二电极。 叠层结构体包括第一和第二半导体层以及设置在第二和第一半导体层之间的发光层，并且具有第一和第二主表面。 第一电极具有与第一半导体层接触的第一接触部分。 第二电极具有与第二半导体层接触的部分。 第一主表面一侧的第一半导体层的表面具有第一部分，其第一部分具有与第一半导体层的接触表面重叠的部分，第二部分具有与第二半导体层重叠的部分。 第二部分是不规律的。 不规则的间距比发光的峰值波长长。 第一部分具有比第二部分更小的不规则性。

    Semiconductor light-emitting device
    6.
    发明授权
    Semiconductor light-emitting device 失效
    半导体发光装置

    公开(公告)号：US08421085B2

    公开(公告)日：2013-04-16

    申请号：US12873678

    申请日：2010-09-01

    申请人： Hiroshi Katsuno ,  Yasuo Ohba ,  Mitsuhiro Kushibe ,  Kei Kaneko ,  Shinji Yamada

    发明人： Hiroshi Katsuno ,  Yasuo Ohba ,  Mitsuhiro Kushibe ,  Kei Kaneko ,  Shinji Yamada

    IPC分类号： H01L33/22

    CPC分类号： H01L33/382 ,  H01L33/22 ,  H01L33/405 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/01322 ,  H01L2924/19107 ,  H01L2924/00014 ,  H01L2924/00

    摘要： According to one embodiment, a semiconductor light-emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a light-emitting layer, a third semiconductor layer and a first electrode. The light-emitting layer is provided between the first and second semiconductor layers. The third semiconductor layer is provided on opposite side of the first semiconductor layer from the light-emitting layer, has a lower impurity concentration than the first semiconductor layer, and includes an opening exposing part of the first semiconductor layer. The first electrode is in contact with the first semiconductor layer through the opening. The third semiconductor layer further includes a rough surface portion which is provided on opposite side from the first semiconductor layer and includes a surface asperity larger than wavelength in the third semiconductor layer of peak wavelength of emission light emitted from the light-emitting layer.

    摘要翻译： 根据一个实施例，半导体发光器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层，发光层，第三半导体层和第一电极。 发光层设置在第一和第二半导体层之间。 第三半导体层设置在第一半导体层与发光层的相对侧上，其杂质浓度低于第一半导体层，并且包括第一半导体层的露出部分的开口。 第一电极通过开口与第一半导体层接触。 第三半导体层还包括设置在与第一半导体层相反一侧的粗糙表面部分，并且包括比从发光层发射的发射光的峰值波长的第三半导体层中的波长大的表面粗糙度。

    SEMICONDUCTOR LIGHT-EMITTING DEVICE
    7.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
    半导体发光器件

    公开(公告)号：US20110220932A1

    公开(公告)日：2011-09-15

    申请号：US12873670

    申请日：2010-09-01

    申请人： Hiroshi Katsuno ,  Yasuo Ohba ,  Mitsuhiro Kushibe ,  Kei Kaneko ,  Shinji Yamada

    发明人： Hiroshi Katsuno ,  Yasuo Ohba ,  Mitsuhiro Kushibe ,  Kei Kaneko ,  Shinji Yamada

    IPC分类号： H01L33/22

    CPC分类号： H01L33/382 ,  H01L33/22 ,  H01L33/405 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/19107 ,  H01L2924/00014

    摘要： According to one embodiment, a semiconductor light-emitting device includes a first semiconductor layer, a second semiconductor layer, a light-emitting layer, a third semiconductor layer and a first electrode. The first semiconductor layer of a first conductivity type has a first major surface provided with a first surface asperity. The second semiconductor layer of a second conductivity type is provided on an opposite side of the first semiconductor layer from the first major surface. The light-emitting layer is provided between the first and second semiconductor layers. The first semiconductor layer is disposed between a third semiconductor layer and the light-emitting layer. The third semiconductor layer has an impurity concentration lower than an impurity concentration of the first semiconductor layer, and includes an opening exposing the first surface asperity. The first electrode is in contact with the first surface asperity through the opening, and reflective to emission light emitted from the light-emitting layer.

    摘要翻译： 根据一个实施例，半导体发光器件包括第一半导体层，第二半导体层，发光层，第三半导体层和第一电极。 第一导电类型的第一半导体层具有设置有第一表面粗糙度的第一主表面。 第二导电类型的第二半导体层设置在第一半导体层与第一主表面相对的一侧上。 发光层设置在第一和第二半导体层之间。 第一半导体层设置在第三半导体层和发光层之间。 第三半导体层的杂质浓度低于第一半导体层的杂质浓度，并且包括露出第一表面粗糙度的开口。 第一电极通过开口与第一表面凹凸接触，并且反射到从发光层发射的发射光。

    SEMICONDUCTOR LIGHT-EMITTING DEVICE
    8.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING DEVICE 失效
    半导体发光器件

    公开(公告)号：US20110220911A1

    公开(公告)日：2011-09-15

    申请号：US12873678

    申请日：2010-09-01

    申请人： Hiroshi Katsuno ,  Yasuo Ohba ,  Mitsuhiro Kushibe ,  Kei Kaneko ,  Shinji Yamada

    发明人： Hiroshi Katsuno ,  Yasuo Ohba ,  Mitsuhiro Kushibe ,  Kei Kaneko ,  Shinji Yamada

    IPC分类号： H01L33/22 ,  H01L33/32

    CPC分类号： H01L33/382 ,  H01L33/22 ,  H01L33/405 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/01322 ,  H01L2924/19107 ,  H01L2924/00014 ,  H01L2924/00

    摘要： According to one embodiment, a semiconductor light-emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a light-emitting layer, a third semiconductor layer and a first electrode. The light-emitting layer is provided between the first and second semiconductor layers. The third semiconductor layer is provided on opposite side of the first semiconductor layer from the light-emitting layer, has a lower impurity concentration than the first semiconductor layer, and includes an opening exposing part of the first semiconductor layer. The first electrode is in contact with the first semiconductor layer through the opening. The third semiconductor layer further includes a rough surface portion which is provided on opposite side from the first semiconductor layer and includes a surface asperity larger than wavelength in the third semiconductor layer of peak wavelength of emission light emitted from the light-emitting layer.

    摘要翻译： 根据一个实施例，半导体发光器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层，发光层，第三半导体层和第一电极。 发光层设置在第一和第二半导体层之间。 第三半导体层设置在第一半导体层与发光层的相对侧上，其杂质浓度低于第一半导体层，并且包括第一半导体层的露出部分的开口。 第一电极通过开口与第一半导体层接触。 第三半导体层还包括设置在与第一半导体层相反一侧的粗糙表面部分，并且包括比从发光层发射的发射光的峰值波长的第三半导体层中的波长大的表面粗糙度。

    Semiconductor light emitting device, wafer, method for manufacturing semiconductor light emitting device, and method for manufacturing wafer
    9.
    发明授权
    Semiconductor light emitting device, wafer, method for manufacturing semiconductor light emitting device, and method for manufacturing wafer 有权
    半导体发光器件，晶片，半导体发光器件的制造方法以及晶片的制造方法

    公开(公告)号：US09012888B2

    公开(公告)日：2015-04-21

    申请号：US13406705

    申请日：2012-02-28

    申请人： Mitsuhiro Kushibe ,  Yasuo Ohba ,  Hiroshi Katsuno ,  Kei Kaneko ,  Shinji Yamada

    发明人： Mitsuhiro Kushibe ,  Yasuo Ohba ,  Hiroshi Katsuno ,  Kei Kaneko ,  Shinji Yamada

    IPC分类号： H01L33/06 ,  H01L33/32 ,  H01L33/00

    CPC分类号： H01L33/06 ,  H01L33/0079 ,  H01L33/32

    摘要： According to one embodiment, a semiconductor light emitting device includes a first layer of n-type and a second layer of p-type including a nitride semiconductor, a light emitting unit provided between the first and second layers, a first stacked structure provided between the first layer and the light emitting unit, and a second stacked structure provided between the first layer and the first stacked structure. The light emitting unit includes barrier layers and a well layer provided between the barrier layers. The first stacked structure includes third layers including a nitride semiconductor, and fourth layers stacked with the third layers and including GaInN. The fourth layers have a thinner thickness than the well layer. The second stacked structure includes fifth layers including a nitride semiconductor, and sixth layers stacked with the fifth layers and including GaInN. The sixth layers have a thinner thickness than the well layer.

    摘要翻译： 根据一个实施例，半导体发光器件包括第一层n型和第二层p型，包括氮化物半导体，设置在第一和第二层之间的发光单元，第一层叠结构， 第一层和发光单元，以及设置在第一层和第一堆叠结构之间的第二堆叠结构。 发光单元包括阻挡层和设置在阻挡层之间的阱层。 第一堆叠结构包括包括氮化物半导体的第三层和与第三层堆叠并包括GaInN的第四层。 第四层具有比阱层更薄的厚度。 第二堆叠结构包括包括氮化物半导体的第五层和与第五层堆叠并包括GaInN的第六层。 第六层的厚度比井层薄。

    Semiconductor device, wafer, method for manufacturing semiconductor device, and method for manufacturing wafer
    10.
    发明授权
    Semiconductor device, wafer, method for manufacturing semiconductor device, and method for manufacturing wafer 有权
    半导体器件，晶片，半导体器件的制造方法以及晶片的制造方法

    公开(公告)号：US08937325B2

    公开(公告)日：2015-01-20

    申请号：US13406740

    申请日：2012-02-28

    申请人： Mitsuhiro Kushibe ,  Yasuo Ohba ,  Hiroshi Katsuno ,  Kei Kaneko ,  Shinji Yamada

    发明人： Mitsuhiro Kushibe ,  Yasuo Ohba ,  Hiroshi Katsuno ,  Kei Kaneko ,  Shinji Yamada

    IPC分类号： H01L33/00 ,  H01L33/06 ,  H01L33/32

    CPC分类号： H01L33/06 ,  H01L33/0079 ,  H01L33/32

    摘要： According to one embodiment, a semiconductor device includes a first layer of n-type including a nitride semiconductor, a second layer of p-type including a nitride semiconductor, a light emitting unit, and a first stacked body. The light emitting unit is provided between the first and second layers. The first stacked body is provided between the first layer and the light emitting unit. The first stacked body includes a plurality of third layers including AlGaInN, and a plurality of fourth layers alternately stacked with the third layers and including GaInN. The first stacked body has a first surface facing the light emitting unit. The first stacked body has a depression provided in the first surface. A part of the light emitting unit is embedded in a part of the depression. A part of the second layer is disposed on the part of the light emitting unit.

    摘要翻译： 根据一个实施例，半导体器件包括包括氮化物半导体的n型第一层，包括氮化物半导体的p型第二层，发光单元和第一层叠体。 发光单元设置在第一和第二层之间。 第一层叠体设置在第一层和发光单元之间。 第一层叠体包括多个包含AlGaInN的第三层和与第三层交替堆叠并包括GaInN的多个第四层。 第一层叠体具有面向发光单元的第一表面。 第一层叠体具有设置在第一表面中的凹陷。 发光单元的一部分嵌入凹部的一部分。 第二层的一部分设置在发光单元的一部分上。