Semiconductor device and method for manufacturing same
    3.
    发明授权
    Semiconductor device and method for manufacturing same 有权
    半导体装置及其制造方法

    公开(公告)号:US07981811B2

    公开(公告)日:2011-07-19

    申请号:US12508888

    申请日:2009-07-24

    IPC分类号: H01L21/31

    CPC分类号: H01L29/78621 H01L29/66757

    摘要: A base layer is formed on an insulating substrate, and a semiconductor layer is formed in localized fashion thereon. A gate insulating film is then formed so as to cover the semiconductor layer, and a gate electrode is formed on a portion of the gate insulating film. An impurity is then implanted into the semiconductor layer via the gate insulating film, and a source region, a drain region, and an LDD region are formed. The gate insulating film is etched with dilute hydrofluoric acid. An electrode-protecting insulating film is then formed so as to cover the gate electrode, and the entire surface of the surface layer portion of the electrode-protecting insulating film is etched away using dilute hydrofluoric acid. Carrier traps introduced into the electrode-protecting insulating film and the gate insulating film are thereby removed.

    摘要翻译: 在绝缘基板上形成基底层,以局部方式形成半导体层。 然后形成栅极绝缘膜以覆盖半导体层,并且栅极电极形成在栅极绝缘膜的一部分上。 然后通过栅极绝缘膜将杂质注入到半导体层中,形成源极区,漏极区和LDD区。 用稀氢氟酸蚀刻栅极绝缘膜。 然后形成电极保护绝缘膜以覆盖栅电极,并且使用稀氢氟酸腐蚀掉电极保护绝缘膜的表面层部分的整个表面。 因此,引入到电极保护绝缘膜和栅极绝缘膜中的载流子阱被去除。

    Spin tunnel magnetoresistive effect film and element, magnetoresistive sensor using same, magnetic apparatus, and method for manufacturing same
    4.
    发明授权
    Spin tunnel magnetoresistive effect film and element, magnetoresistive sensor using same, magnetic apparatus, and method for manufacturing same 有权
    旋转隧道磁阻效应膜和元件,使用其的磁阻传感器,磁性装置及其制造方法

    公开(公告)号:US07160572B2

    公开(公告)日:2007-01-09

    申请号:US10923990

    申请日:2004-08-23

    IPC分类号: B05D5/12

    摘要: In a spin tunnel magnetoresistive effect film in which a magnetic thin film to which an exchange bias is applied by exchange coupling via an anti-ferromagnetic thin film and a magnetic thin film that detects a magnetic field are laminated, a magnetic thin film or an anti-ferromagnetic thin film (PtMn, PdMn, NiMn) is laminated onto an underlayer (Ta, Zr, Hf), the surface roughness thereof being in the range from 0.1 to 5 Angstroms. A means used to control the surface roughness introduces into the film growing chamber oxygen, nitrogen, hydrogen, or a gas mixture thereof into a vacuum of 10−6 Torr to 10−9 Torr, reduces the substrate temperature to 0° C. or lower during film growth, or oxidizes an underlayer. The lower electrode layer material used is a film laminate of a high-permeability amorphous magnetic material and a non-magnetic metallic layer.

    摘要翻译: 在通过反铁磁性薄膜进行交换耦合而施加了交换偏压的磁性薄膜和检测磁场的磁性薄膜的自旋隧道磁阻效应薄膜中,形成磁性薄膜或抗反射膜 将铁磁性薄膜(PtMn,PdMn,NiMn)层压到底层(Ta,Zr,Hf)上,其表面粗糙度在0.1〜5埃的范围内。 用于控制表面粗糙度的方法将薄膜生长室中的氧气,氮气,氢气或其气体混合物引入10 -6乇至10 -9乇的真空中 > Torr,在膜生长期间将衬底温度降低至0℃或更低,或氧化底层。 所使用的下电极层材料是高磁导率非晶磁性材料和非磁性金属层的膜层叠体。

    Online roll grinding method and online roll grinding apparatus

    公开(公告)号:US06431951B1

    公开(公告)日:2002-08-13

    申请号:US09768455

    申请日:2001-01-25

    IPC分类号: B24B504

    摘要: Upper and lower working rolls 2a, 2b are ground while moving respective grindstone devices 3a, 3b in reverse directions, whereby the region of grinding for the upper working roll 2a and that for the lower working roll 2b are maintained in symmetry with respect to the center of rolls, one on the operating side and the other on the driving side. By this arrangement, it is possible to equalize the coefficients of friction on the operating side and the driving side, and to prevent meandering of the rolling stock 6 as well as drawing (squeezing) or bad product shape due to the meandering from occurring. The timings to start grinding by the grindstone devices 3a, 3b are set to be substantially the same, and the velocities of movement of the grindstone devices 3a, 3b in the axial direction of the working rolls are set to be equal, whereby the difference in frictional coefficient due to grinding in the longitudinal direction of the rolls can stably be kept small.