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    Purification of organic silicon polymer
    5.
    发明授权
    Purification of organic silicon polymer 失效
    有机硅聚合物的纯化

    公开(公告)号：US6114500A

    公开(公告)日：2000-09-05

    申请号：US226241

    申请日：1999-01-07

    申请人： Shigeru Mori ,  Yoshitaka Hamada

    发明人： Shigeru Mori ,  Yoshitaka Hamada

    IPC分类号： C08J3/00 ,  C08G77/34 ,  C08G77/50 ,  C08J3/07

    CPC分类号： C08G77/34

    摘要： An organic silicon polymer is purified by washing at least once a solution of an organic silicon polymer with aqueous hydrochloric acid having a concentration of at least 0.001 N, and washing the solution at least twice with ultrapure water having a resistivity of at least 10 M.OMEGA./cm. Metal impurities can be removed from the organic silicon polymer to a sufficient level for use as electronic material without detracting from the polymer's own properties.

    摘要翻译： 通过用有机硅聚合物与浓度至少为0.001N的盐酸水溶液洗涤至少一次来纯化有机硅聚合物，并用电阻率至少为10μM的超纯水将该溶液洗涤至少两次 /厘米。 金属杂质可以从有机硅聚合物中除去足够的水平，用作电子材料，而不会降低聚合物本身的性能。

    Preparation process of trisilylamine
    6.
    发明授权
    Preparation process of trisilylamine 有权
    三甲胺的制备方法

    公开(公告)号：US08461367B2

    公开(公告)日：2013-06-11

    申请号：US13004377

    申请日：2011-01-11

    申请人： Yoshitaka Hamada ,  Kazuhiro Hirahara

    发明人： Yoshitaka Hamada ,  Kazuhiro Hirahara

    IPC分类号： C07F7/02

    CPC分类号： C01B21/087

    摘要： Provided is a preparation process of trisilylamine capable of preparing high-purity trisilylamine more easily at a lower cost. More specifically, provided is a preparation process of trisilylamine, comprising a step of thermally decomposing perhydropolysilazane under an oxygen-free or low oxygen atmosphere.

    摘要翻译： 提供了能够以更低成本更容易地制备高纯度三甲胺的三甲胺的制备方法。 更具体地说，提供了三甲胺的制备方法，包括在无氧或低氧气氛下热分解全氢聚硅氮烷的步骤。

    PREPARATION PROCESS OF TRISILYLAMINE
    7.
    发明申请
    PREPARATION PROCESS OF TRISILYLAMINE 有权
    三甲胺的制备方法

    公开(公告)号：US20110178322A1

    公开(公告)日：2011-07-21

    申请号：US13004377

    申请日：2011-01-11

    申请人： Yoshitaka Hamada ,  Kazuhiro Hirahara

    发明人： Yoshitaka Hamada ,  Kazuhiro Hirahara

    IPC分类号： C07F7/10

    CPC分类号： C01B21/087

    摘要： Provided is a preparation process of trisilylamine capable of preparing high-purity trisilylamine more easily at a lower cost. More specifically, provided is a preparation process of trisilylamine, comprising a step of thermally decomposing perhydropolysilazane under an oxygen-free or low oxygen atmosphere.

    摘要翻译： 提供了能够以更低成本更容易地制备高纯度三甲胺的三甲胺的制备方法。 更具体地说，提供了三甲胺的制备方法，包括在无氧或低氧气氛下热分解全氢聚硅氮烷的步骤。

    ORGANIC SILANE COMPOUND FOR FORMING SI-CONTAINING FILM BY PLASMA CVD AND METHOD FOR FORMING SI-CONTAINING FILM
    8.
    发明申请
    ORGANIC SILANE COMPOUND FOR FORMING SI-CONTAINING FILM BY PLASMA CVD AND METHOD FOR FORMING SI-CONTAINING FILM 有权
    用于通过等离子体CVD形成含SI膜的有机硅烷化合物和形成含SI的膜的方法

    公开(公告)号：US20100137626A1

    公开(公告)日：2010-06-03

    申请号：US12628469

    申请日：2009-12-01

    申请人： Yoshitaka Hamada

    发明人： Yoshitaka Hamada

    IPC分类号： C07F7/08 ,  H01L21/314

    CPC分类号： H01L21/31604 ,  B05D1/62 ,  C07F7/1804 ,  C23C16/401 ,  C23C16/505 ,  H01L21/02123 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02214 ,  H01L21/02274

    摘要： An organic silane compound for forming a Si-containing film by plasma CVD is provided. The silane compound contains 2 or more silicon atoms bonded by an intervening straight chain or branched oxygen-containing hydrocarbon chain having 4 to 8 carbon atoms containing a bond represented by Cp—O—Cq wherein p and q independently represent number of carbon atoms with the proviso that 2≦p≦6 and 2≦q≦6 and the carbon chains do not contain an unsaturated bond which conjugates with the oxygen atom, wherein all of the 2 or more silicon atoms has 1 or more hydrogen atom or an alkoxy group having 1 to 4 carbon atoms.

    摘要翻译： 提供了通过等离子体CVD形成含Si膜的有机硅烷化合物。 硅烷化合物含有2个以上的硅原子，该硅原子通过含有由Cp-O-Cq表示的键的具有4〜8个碳原子的直链或支链含氧烃链键合，其中p和q独立地表示碳原子数， 条件是2＆nlE; p＆nlE; 6和2＆nlE; q＆nlE; 6和碳链不含有与氧原子共轭的不饱和键，其中所有2个或更多个硅原子具有1个或更多个氢原子或具有 1至4个碳原子。

    Positive resist material and pattern formation method using the same
    10.
    发明授权
    Positive resist material and pattern formation method using the same 有权
    正抗蚀剂材料和使用其的图案形成方法

    公开(公告)号：US07651829B2

    公开(公告)日：2010-01-26

    申请号：US10854568

    申请日：2004-05-26

    申请人： Yoshitaka Hamada ,  Fujio Yagihashi ,  Mutsuo Nakashima ,  Kazumi Noda ,  Katsuya Takemura

    发明人： Yoshitaka Hamada ,  Fujio Yagihashi ,  Mutsuo Nakashima ,  Kazumi Noda ,  Katsuya Takemura

    IPC分类号： G03F7/039 ,  G03F7/20 ,  G03F7/30 ,  G03F7/36 ,  G03F7/38

    CPC分类号： G03F7/0045 ,  G03F7/0757 ,  Y10S430/143

    摘要： Provided is a positive resist material, particularly a chemically amplified positive resist material having higher sensitivity, higher resolution, a higher exposure latitude and better process adaptability than conventional positive resist materials, and providing a good pattern profile after exposure, particularly having lessened line edge roughness and exhibiting excellent etching resistance. These materials may contain, preferably an organic solvent and acid generator, more preferably a dissolution inhibitor or a basic compound and/or a surfactant. Provided is a positive resist material comprising a polymer comprising at least one monomer unit selected from a group consisting of a monomer unit (A), a monomer unit (B) and a monomer unit (C) represented by the following formula (1); and having a glass transition temperature (Tg) of 100° C. or greater.

    摘要翻译： 本发明提供了正电阻材料，特别是具有比常规正性抗蚀剂材料更高的灵敏度，更高分辨率，更高的曝光宽容度和更好的工艺适应性的化学放大的正性抗蚀剂材料，并且在曝光之后提供良好的图案轮廓，特别是具有减小的线边缘粗糙度 并具有优异的耐蚀刻性。 这些材料可以优选含有有机溶剂和酸产生剂，更优选含有溶解抑制剂或碱性化合物和/或表面活性剂。 提供一种正性抗蚀剂材料，其包含包含选自由下式（1）表示的单体单元（A），单体单元（B）和单体单元（C））组成的组中的至少一种单体单元的聚合物; 玻璃化转变温度（Tg）为100℃以上。