Photoelectric conversion device, method for manufacturing the same, photo sensor and imaging device
    2.
    发明授权
    Photoelectric conversion device, method for manufacturing the same, photo sensor and imaging device 有权
    光电转换装置,其制造方法,光传感器和成像装置

    公开(公告)号:US08822808B2

    公开(公告)日:2014-09-02

    申请号:US13638000

    申请日:2011-03-24

    申请人: Mitsumasa Hamano

    发明人: Mitsumasa Hamano

    IPC分类号: H01L25/00

    摘要: Provided are a photoelectric conversion device capable of controlling an absorbance of the red region at a wavelength of 600 nm or more, and an imaging device having an improved color reproduction by using the photoelectric device. Provided are a photoelectric conversion device that includes a pair of electrodes, and a photoelectric conversion layer disposed between the pair of electrodes, in which the photoelectric conversion layer contains a p-type semiconductor compound and two or more different kinds of unsubstituted fullerenes, and an imaging device that includes the photoelectric conversion device.

    摘要翻译: 提供了能够控制在600nm以上的波长处的红色区域的吸光度的光电转换装置,以及通过使用光电装置具有改善的颜色再现的成像装置。 提供一种光电转换装置,其包括一对电极和设置在该对电极之间的光电转换层,其中光电转换层包含p型半导体化合物和两种或更多种不同种类的未取代的富勒烯,以及 成像装置,包括光电转换装置。

    Photoelectric conversion device, production method thereof and imaging device
    3.
    发明授权
    Photoelectric conversion device, production method thereof and imaging device 有权
    光电转换装置及其制造方法及成像装置

    公开(公告)号:US08513651B2

    公开(公告)日:2013-08-20

    申请号:US12794220

    申请日:2010-06-04

    IPC分类号: H01L29/12

    摘要: Provided is a photoelectric conversion device comprising an electrically conductive film, a photoelectric conversion film, and a transparent electrically conductive film, wherein the photoelectric conversion film contains a fullerene or a fullerene derivative and a photoelectric conversion material having an absorption spectrum satisfying at least either the following condition (A) or (B): λM1 Δ|λM2−λL2|  (B) wherein λL1, λL2, λM1 and λM2 are the wavelength at an absorption intensity of ½ of the maximum absorption intensity in the wavelength range of from 400 to 800 nm, each of λL1 and λL2 represents the wavelength in a chloroform solution spectrum when the photoelectric conversion material is dissolved in chloroform, and each of λM1 and λM2 represents the wavelength in a thin-film absorption spectrum of the photoelectric conversion material alone, provided that λL1

    摘要翻译: 本发明提供一种光电转换元件,其特征在于,具有导电膜,光电转换膜和透明导电膜,其中,所述光电转换膜含有富勒烯或富勒烯衍生物,以及具有满足以下条件的吸收光谱的光电转换材料: 以下条件(A)或(B):λM1<λL1和λM2<λL2(A)λM1<λL1和Δ|λM1-λL1|>Δ|λM2-λL2|(B)其中λL1,λL2,λM1和λM2是 在400至800nm的波长范围内,吸收强度为最大吸收强度的1/2的波长,λL1和λL2中的每一个表示当光电转换材料溶解在氯仿中时氯仿溶液光谱中的波长,λM1 λM2表示单独的光电转换材料的薄膜吸收光谱中的波长, 条件是λL1

    Photoelectric conversion device and imaging device
    4.
    发明授权
    Photoelectric conversion device and imaging device 有权
    光电转换装置及成像装置

    公开(公告)号:US08471246B2

    公开(公告)日:2013-06-25

    申请号:US12579033

    申请日:2009-10-14

    IPC分类号: H01L29/12 H01L29/861

    摘要: A photoelectric conversion device is provided, the photoelectric conversion device including: a pair of electrodes; a photoelectric conversion layer arranged between the pair of electrodes and containing an n-type organic semiconductor; and a charge blocking layer arranged between one of the pair of electrodes and the photoelectric conversion layer, the charge blocking layer being formed of a single layer or two or more layers, wherein a difference Δ1 between ionization potential Ip of a layer of the charge blocking layer adjacent to the photoelectric conversion layer and electron affinity Ea of the n-type organic semiconductor is at least 1 eV; and the charge blocking layer has a gross thickness of at least 20 nm.

    摘要翻译: 提供一种光电转换装置,该光电转换装置包括:一对电极; 布置在所述一对电极之间且包含n型有机半导体的光电转换层; 以及电荷阻挡层,其布置在所述一对电极和所述光电转换层之一之间,所述电荷阻挡层由单层或两层以上形成,其中所述电荷阻挡层的电离电位Ip之间的差值Δ1 并且n型有机半导体的电子亲和力Ea至少为1eV; 并且电荷阻挡层的总厚度为至少20nm。

    PHOTOELECTRIC CONVERSION DEVICE, METHOD FOR MANUFACTURING THE SAME, PHOTO SENSOR AND IMAGING DEVICE
    7.
    发明申请
    PHOTOELECTRIC CONVERSION DEVICE, METHOD FOR MANUFACTURING THE SAME, PHOTO SENSOR AND IMAGING DEVICE 有权
    光电转换装置,其制造方法,照相传感器和成像装置

    公开(公告)号:US20130015547A1

    公开(公告)日:2013-01-17

    申请号:US13638000

    申请日:2011-03-24

    申请人: Mitsumasa Hamano

    发明人: Mitsumasa Hamano

    摘要: Provided are a photoelectric conversion device capable of controlling an absorbance of the red region at a wavelength of 600 nm or more, and an imaging device having an improved color reproduction by using the photoelectric device. Provided are a photoelectric conversion device that includes a pair of electrodes, and a photoelectric conversion layer disposed between the pair of electrodes, in which the photoelectric conversion layer contains a p-type semiconductor compound and two or more different kinds of unsubstituted fullerenes, and an imaging device that includes the photoelectric conversion device.

    摘要翻译: 提供了能够控制在600nm以上的波长处的红色区域的吸光度的光电转换装置,以及通过使用光电装置具有改善的颜色再现的成像装置。 提供一种光电转换装置,其包括一对电极和设置在该对电极之间的光电转换层,其中光电转换层包含p型半导体化合物和两种或更多种不同种类的未取代的富勒烯,以及 成像装置,包括光电转换装置。

    Photoelectric conversion element and imaging device
    8.
    发明授权
    Photoelectric conversion element and imaging device 有权
    光电转换元件和成像装置

    公开(公告)号:US08338691B2

    公开(公告)日:2012-12-25

    申请号:US12399417

    申请日:2009-03-06

    IPC分类号: H01L31/00 H01L31/042

    摘要: A photoelectric conversion element is provided and includes: an electrically conductive thin layer; an organic photoelectric conversion layer; and a transparent electrically conductive thin layer. The organic photoelectric conversion layer contains: a compound represented by formula (I); and a fullerene or a fullerene derivative. In the formula, Z1 represents an atomic group necessary for forming a 5- or 6-membered ring, L1, L2 and L3 each independently represents an unsubstituted methine group or a substituted methine group, D1 represents an atomic group, and n represents an integer of 0 or more.

    摘要翻译: 提供了一种光电转换元件,包括:导电薄层; 有机光电转换层; 和透明导电薄层。 有机光电转换层包含:式(I)表示的化合物; 和富勒烯或富勒烯衍生物。 在该式中,Z1表示形成5元或6元环所必需的原子团,L1,L2和L3各自独立地表示未取代的次甲基或取代的次甲基,D1表示原子团,n表示整数 为0以上。

    PHOTOELECTRIC CONVERSION ELEMENT AND IMAGING DEVICE
    9.
    发明申请
    PHOTOELECTRIC CONVERSION ELEMENT AND IMAGING DEVICE 有权
    光电转换元件和成像装置

    公开(公告)号:US20090223566A1

    公开(公告)日:2009-09-10

    申请号:US12399417

    申请日:2009-03-06

    IPC分类号: H01L31/00

    摘要: A photoelectric conversion element is provided and includes: an electrically conductive thin layer; an organic photoelectric conversion layer; and a transparent electrically conductive thin layer. The organic photoelectric conversion layer contains: a compound represented by formula (I); and a fullerene or a fullerene derivative. In the formula, Z1 represents an atomic group necessary for forming a 5- or 6-membered ring, L1, L2 and L3 each independently represents an unsubstituted methine group or a substituted methine group, D1 represents an atomic group, and n represents an integer of 0 or more.

    摘要翻译: 提供了一种光电转换元件,包括:导电薄层; 有机光电转换层; 和透明导电薄层。 有机光电转换层包含:式(I)表示的化合物; 和富勒烯或富勒烯衍生物。 在该式中,Z1表示形成5元或6元环所必需的原子团,L1,L2和L3各自独立地表示未取代的次甲基或取代的次甲基,D1表示原子团,n表示整数 为0以上。