摘要:
Provided is a photoelectric conversion device comprising an electrically conductive film, a photoelectric conversion film, and a transparent electrically conductive film, wherein the photoelectric conversion film contains a fullerene or a fullerene derivative and a photoelectric conversion material having an absorption spectrum satisfying at least either the following condition (A) or (B): λM1 Δ|λM2−λL2| (B) wherein λL1, λL2, λM1 and λM2 are the wavelength at an absorption intensity of ½ of the maximum absorption intensity in the wavelength range of from 400 to 800 nm, each of λL1 and λL2 represents the wavelength in a chloroform solution spectrum when the photoelectric conversion material is dissolved in chloroform, and each of λM1 and λM2 represents the wavelength in a thin-film absorption spectrum of the photoelectric conversion material alone, provided that λL1
摘要:
An organic compound and a photoelectric conversion device containing the organic compound are disclosed. The organic compound and device realize high photoelectric conversion efficiency, low dark current and high-speed responsivity. It has been found that when this organic compound and an n-type semiconductor are used in combination, high-speed responsivity can be realized while maintaining high heat resistance, an aspect of which has not been seen when the connection part between a donor part and an acceptor part is a phenylene group.
摘要:
A photoelectric conversion device comprising an electrically conductive film, an organic photoelectric conversion film, and a transparent electrically conductive film, wherein the organic photoelectric conversion film contains a compound represented by the following formula (1) and an n-type organic semiconductor: wherein each of R1 and R2 independently represents a substituted aryl group, an unsubstituted aryl group, a substituted heteroaryl group or an unsubstituted heteroaryl group, each of R3 to R11 independently represents a hydrogen atom or a substituent provided that an acidic group is excluded, m represents 0 or 1, n represents an integer of 0 or more, R1 and R2, R3 and R4, R3 and R5, R5 and R6, R6 and R8, R7 and R8, R7 and R9, or R10 and R11 may be combined each other to form a ring, and when n is an integer of 2 or more, out of a plurality of R7's and R8's, a pair of R7's, a pair of R8's, or a pair of R7 and R8 may be combined each other to form a ring.
摘要:
A photoelectric conversion element is provided and includes: an electrically conductive thin layer; an organic photoelectric conversion layer; and a transparent electrically conductive thin layer. The organic photoelectric conversion layer contains: a compound represented by formula (I); and a fullerene or a fullerene derivative. In the formula, Z1 represents an atomic group necessary for forming a 5- or 6-membered ring, L1, L2 and L3 each independently represents an unsubstituted methine group or a substituted methine group, D1 represents an atomic group, and n represents an integer of 0 or more.
摘要:
A photoelectric conversion element is provided and includes: an electrically conductive thin layer; an organic photoelectric conversion layer; and a transparent electrically conductive thin layer. The organic photoelectric conversion layer contains: a compound represented by formula (I); and a fullerene or a fullerene derivative. In the formula, Z1 represents an atomic group necessary for forming a 5- or 6-membered ring, L1, L2 and L3 each independently represents an unsubstituted methine group or a substituted methine group, D1 represents an atomic group, and n represents an integer of 0 or more.
摘要:
Provided is an organic semiconductor which is a compound represented by the following formula (I): wherein each of R11, R12, R13, R14 and R15 independently represents a hydrogen atom or a substituent, and each of a pair of R11 and R12 and a pair of R12 and R13 may combine to form a ring, B1 represents a ring structure containing at least one nitrogen atom, and n1 represents an integer of 0 to 2.
摘要:
A photoelectric conversion device is provided, the photoelectric conversion device including: a pair of electrodes; a photoelectric conversion layer arranged between the pair of electrodes and containing an n-type organic semiconductor; and a charge blocking layer arranged between one of the pair of electrodes and the photoelectric conversion layer, the charge blocking layer being formed of a single layer or two or more layers, wherein a difference Δ1 between ionization potential Ip of a layer of the charge blocking layer adjacent to the photoelectric conversion layer and electron affinity Ea of the n-type organic semiconductor is at least 1 eV; and the charge blocking layer has a gross thickness of at least 20 nm.
摘要:
Provided are a photoelectric conversion device capable of controlling an absorbance of the red region at a wavelength of 600 nm or more, and an imaging device having an improved color reproduction by using the photoelectric device. Provided are a photoelectric conversion device that includes a pair of electrodes, and a photoelectric conversion layer disposed between the pair of electrodes, in which the photoelectric conversion layer contains a p-type semiconductor compound and two or more different kinds of unsubstituted fullerenes, and an imaging device that includes the photoelectric conversion device.
摘要:
Provided are a photoelectric conversion device capable of controlling an absorbance of the red region at a wavelength of 600 nm or more, and an imaging device having an improved color reproduction by using the photoelectric device. Provided are a photoelectric conversion device that includes a pair of electrodes, and a photoelectric conversion layer disposed between the pair of electrodes, in which the photoelectric conversion layer contains a p-type semiconductor compound and two or more different kinds of unsubstituted fullerenes, and an imaging device that includes the photoelectric conversion device.