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1.发明授权Polyphenol compound, quinonediazide ester and positive photoresist composition 失效多酚化合物，醌二叠氮化物酯和正性光致抗蚀剂组合物
公开(公告)号：US6120969A
公开(公告)日：2000-09-19
申请号：US269881
申请日：1999-04-02
IPC分类号： C07C39/15 , C07C309/71 , C07C309/74 , C07C309/76 , G03F7/004 , G03F7/022 , H01L21/027 , G03F7/023
CPC分类号： G03F7/022
摘要： Disclosed is, for example, bis(2,5-dimethyl-3-(2-hydroxy-5-ethylbenzyl)-4-hydroxyphenyl)methane and quinonediazide ester thereof. These are used for positive photoresist compositions. According to the invention, positive photoresist compositions having a high definition, a high sensitivity and a large exposure margin can be provided.
摘要翻译： PCT No.PCT / JP99 / 03472 Sec。 一九九九年四月二日 102（e）1999年4月2日PCT 1998年8月4日提交的PCT是例如双（2,5-二甲基-3-（2-羟基-5-乙基苄基）-4-羟基苯基）甲烷和醌二叠氮化物 其中。 这些用于正性光致抗蚀剂组合物。 根据本发明，可以提供具有高清晰度，高灵敏度和大曝光裕度的正性光致抗蚀剂组合物。
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2.发明授权Phenol novolak resin, production process thereof, and positive photoresist composition using the same 有权苯酚酚醛清漆树脂，其制备方法和使用其的正性光致抗蚀剂组合物公开(公告)号：US06939926B2
公开(公告)日：2005-09-06
申请号：US10773294
申请日：2004-02-09
申请人： Ken Miyagi , Yasuhide Ohuchi , Atsuko Hirata , Kousuke Doi , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Ken Miyagi , Yasuhide Ohuchi , Atsuko Hirata , Kousuke Doi , Hidekatsu Kohara , Toshimasa Nakayama
CPC分类号： G03F7/0236 , C08G14/04
摘要： A phenol novolak resin has a peak intensity ratio of ortho-ortho bond (o-o)/ortho-para bond (o-p)/para-para bond (p-p) in a resin structure not substantially varying in each molecular weight fraction and has a weight average molecular weight (Mw) of 3000 to 20000 in terms of polystyrene, which peak intensity ratio is detected by 13C-NMR analysis. The phenol novolak resin can form both dense pattern and isolation pattern with good shapes in the formation of a fine resist pattern of not more than 0.35 μm and has satisfactory sensitivity, definition, and focal depth range properties, and has a resin composition being uniform in each molecular weight fraction. A process for producing the phenol novolak resin, and a positive photoresist composition using the resin are also provided.
摘要翻译： 苯酚酚醛清漆树脂在每个分子量分数基本上不变的树脂结构中具有邻 - 邻键（oo）/邻 - 对键（op）/对 - 对位键（pp）的峰强度比，并具有重均分子量 分子量（Mw）为聚苯乙烯换算为3000〜20000，通过13 C-NMR分析检测出峰强度比。 苯酚酚醛清漆树脂可以形成具有不大于0.35μm的精细抗蚀剂图案的良好形状的致密图案和隔离图案，并且具有令人满意的灵敏度，定义和焦深范围性质，并且具有均匀的树脂组合物 每个分子量分数。 还提供了一种制备苯酚酚醛清漆树脂的方法和使用该树脂的正性光致抗蚀剂组合物。
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3.发明授权Novolak resin precursor, novolak resin and positive photoresist composition containing the novolak resin 失效酚醛清漆树脂前体，酚醛清漆树脂和含有酚醛清漆树脂的正性光致抗蚀剂组合物公开(公告)号：US06417317B1
公开(公告)日：2002-07-09
申请号：US09459606
申请日：1999-12-13
IPC分类号： C08G1404
CPC分类号： G03F7/0236
摘要： A novolak resin precursor is composed of bonded phenolic moieties, one of the hydrogen atoms in the o- or p-positions relative to the hydroxy group of each phenolic moiety is substituted with an alkyl or alkenyl group having 1 to 3 carbon atoms, and the other two hydrogen atoms are bonded through methylene bonds. The content of ortho-ortho bonding is 30 to 70% relative to the number of total methylene bonds and the weight average molecular weight of the precursor is 300 to 10,000. A novolak resin is obtained from this precursor, and a positive photoresist composition comprises this novolak resin. The invention provides a positive photoresist composition that comprises less binuclear compounds, suppresses scum formation, is excellent in terms of definition and coating performance and provides a resist pattern having satisfactory heat resistance.
摘要翻译： 酚醛清漆树脂前体由键合的酚部分组成，相对于每个酚部分的羟基的邻位或对位中的氢原子之一被具有1至3个碳原子的烷基或烯基取代，并且 其他两个氢原子通过亚甲基键键合。 邻位键合的含量相对于总亚甲基的数量为30〜70％，前体的重均分子量为300〜10000。 从该前体获得酚醛清漆树脂，正性光致抗蚀剂组合物包含该酚醛清漆树脂。 本发明提供一种正光致抗蚀剂组合物，其包含较少的双核化合物，抑制浮渣形成，在定义和涂布性能方面优异，并提供具有令人满意的耐热性的抗蚀剂图案。
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公开(公告)号：US06312863B1
公开(公告)日：2001-11-06
申请号：US09618723
申请日：2000-07-18
IPC分类号： G03F7023
CPC分类号： G03F7/022
摘要： A positive photoresist composition includes (A) an alkali-soluble resin, and (B) a photosensitizer including an ester of a 1,2-naphthoquinonediazidesulfonyl compound with a compound of the following formula (I). This positive photoresist composition has satisfactory sensitivity, definition, and depth of focus properties, can form both dense patterns and isolation patterns with good shapes in the formation of mixed resist patterns, and can minimize inverted taper shape formation of isolation resist patterns induced by shifts of focal depth to the minus side.
摘要翻译： 正型光致抗蚀剂组合物包括（A）碱溶性树脂和（B）包含1,2-萘醌二叠氮化物化合物的酯与下式（I）的化合物的光敏剂。 这种正性光致抗蚀剂组合物具有令人满意的灵敏度，定义和深度聚焦性能，可以在形成混合抗蚀剂图案时形成具有良好形状的致密图案和隔离图案，并且可以最小化反转锥形形成由隔离 焦点深度为负侧。
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公开(公告)号：US06296992B1
公开(公告)日：2001-10-02
申请号：US09540539
申请日：2000-03-31
申请人： Masaki Kurihara , Satoshi Niikura , Miki Kobayashi , Kousuke Doi , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Masaki Kurihara , Satoshi Niikura , Miki Kobayashi , Kousuke Doi , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F730
CPC分类号： G03F7/022 , G03F7/0226
摘要： A positive photoresist composition for forming a contact hole which comprises (A) an alkali-soluble resin; (B) a naphthoquinonediazide group-containing compound; and (C) a solvent, wherein the ingredient (B) comprises: at least one naphthoquinonediazidesulfonic ester of a polyphenol compound, where said polyphenol compound is composed of from 4 to 6 benzene rings each bonding via a methylene chain, each of the methylene chains is in a meta position to other methylene chains, and each of the benzene rings has a hydroxyl group is provided. According to tie present invention, a positive photoresist composition and a process for forming a contact hole can be provided each of which gives a contact hole pattern image in exact accordance with a mask pattern without dimple formation, in the contact hole forming technologies using the phaseshift method.
摘要翻译： 一种用于形成接触孔的正性光致抗蚀剂组合物，其包含（A）碱溶性树脂; （B）含萘醌二叠氮化物基团的化合物; 和（C）溶剂，其中成分（B）包括：至少一种多酚化合物的萘醌二叠氮化物，其中所述多酚化合物由4-6个苯环组成，各自通过亚甲基键键合，每个亚甲基链 位于其他亚甲基链的间位，并且提供每个苯环具有羟基。 根据本发明，可以提供正性光致抗蚀剂组合物和用于形成接触孔的方法，其中每一种都在使用相移的接触孔形成技术中精确地根据没有凹坑形成的掩模图案给出接触孔图案图像 方法。
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6.发明授权Novolak resin precursor, novolak resin and positive photoresist composition containing the novolak resin 失效酚醛清漆树脂前体，酚醛清漆树脂和含有酚醛清漆树脂的正性光致抗蚀剂组合物公开(公告)号：US06207788B1
公开(公告)日：2001-03-27
申请号：US09122177
申请日：1998-07-24
IPC分类号： C08G1404
CPC分类号： G03F7/0236
摘要： A novolak resin precursor is composed of bonded phenolic moieties, one of the hydrogen atoms in the o- or p-positions relative to the hydroxy group of each phenolic moiety is substituted with an alkyl or alkenyl group having 1 to 3 carbon atoms, and the other two hydrogen atoms are bonded through methylene bonds. The content of ortho—ortho bonding is 30 to 70% relative to the number of total methylene bonds and the weight average molecular weight of the precursor is 300 to 10,000. A novolak resin is obtained from this precursor, and a positive photoresist composition comprises this novolak resin. The invention provides a positive photoresist composition that comprises less binuclear compounds, suppresses scum formation, is excellent in terms of definition and coating performance and provides a resist pattern having satisfactory heat resistance.
摘要翻译： 酚醛清漆树脂前体由键合的酚部分组成，相对于每个酚部分的羟基的邻位或对位中的氢原子之一被具有1至3个碳原子的烷基或烯基取代，并且 其他两个氢原子通过亚甲基键键合。 邻位键合的含量相对于总亚甲基的数量为30〜70％，前体的重均分子量为300〜10000。 从该前体获得酚醛清漆树脂，正性光致抗蚀剂组合物包含该酚醛清漆树脂。 本发明提供一种正光致抗蚀剂组合物，其包含较少的双核化合物，抑制浮渣形成，在定义和涂布性能方面优异，并提供具有令人满意的耐热性的抗蚀剂图案。
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7.发明授权Positive photoresist compositions and multilayer resist materials using same 失效正光致抗蚀剂组合物和使用其的多层抗蚀剂材料
公开(公告)号：US6127087A
公开(公告)日：2000-10-03
申请号：US98459
申请日：1998-06-17
CPC分类号： G03F7/022
摘要： A positive photoresist composition comprises (A) an alkali-soluble resin, and (B) at least one quinonediazide group-containing compound in which part or all of the hydroxyl groups of a compound represented by the following formula (I) are esterified with a quinonediazidesulfonic acid: ##STR1## wherein each of R.sup.1 and R.sup.2 is an alkyl group having 1 to 5 carbon atoms, and "a" is 0 or 1. The present invention provides a positive photoresist composition which can form a resist pattern having high film residual rate, improved development contrast between exposed portions and unexposed portions, and satisfactory definition, exposure margin, focal depth range properties and sectional shape.
摘要翻译： 正型光致抗蚀剂组合物包含（A）碱溶性树脂和（B）至少一种含醌二叠氮化物基团的化合物，其中由下式（I）表示的化合物的部分或全部羟基被酯化 醌二叠氮化物：其中R 1和R 2各自为具有1至5个碳原子的烷基，“a”为0或1.本发明提供一种正型光致抗蚀剂组合物，其可以形成具有高膜残留率的抗蚀剂图案， 暴露部分和未曝光部分之间的对比度，以及令人满意的清晰度，曝光余量，焦点深度范围属性和截面形状。
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8.发明授权Positive-working naphthoquinone diazide sulfonic acid ester photoresist composition containing 4,4'-bis(dialkylamino)benzophenone 失效含有4,4'-双（二烷基氨基）二苯甲酮的正性萘醌二叠氮磺酸酯光致抗蚀剂组合物
公开(公告)号：US5478692A
公开(公告)日：1995-12-26
申请号：US350128
申请日：1994-11-29
申请人： Kousuke Doi , Taku Nakao , Remi Numata , Nobuo Tokutake , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Kousuke Doi , Taku Nakao , Remi Numata , Nobuo Tokutake , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F7/004 , G03F7/022 , G03F7/031 , H01L21/027 , G03F7/023
CPC分类号： G03F7/0226
摘要： Proposed is a novel positive-working photoresist composition suitable for use in the fine patterning works in the manufacture of electronic devices and capable of exhibiting excellent performance with high resolution, high sensitivity, wide range of focusing depth, large exposure dose latitude and other characteristics. The photoresist composition is formulated, in addition to the basic ingredients of an alkali-soluble novolac resin as a film-forming agent and photosensitive ingredient such as an ester of naphthoquinone-1,2-diazide sulfonic acid and a polyhydroxy compound, with a limited amount of 4,4'-bis(dialkylamino) benzophenone, e.g., 4,4'-bis(diethylamino) benzophenone, preferably, in combination with a polyhydroxy compound such as 4,6-bis[1-methyl-1-(4-hydroxyphenyl)ethyl]-1,3-dihydroxy phenol.
摘要翻译： 提出了一种新型正性光致抗蚀剂组合物，适用于电子器件制造中的精细图案化工作，能够以高分辨率，高灵敏度，宽范围的聚焦深度，较大的曝光剂量纬度等特性表现出优异的性能。 光致抗蚀剂组合物除了作为成膜剂的碱溶性酚醛清漆树脂的基本成分和萘醌-1,2-二叠氮磺酸和多羟基化合物的酯等感光成分以外，配合有限制 4,4'-双（二烷基氨基）二苯甲酮的量，例如4,4'-双（二乙基氨基）二苯甲酮，优选与多羟基化合物如4,6-双[1-甲基-1-（4 - 羟基苯基）乙基] -1,3-二羟基苯酚。
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公开(公告)号：US06379859B2
公开(公告)日：2002-04-30
申请号：US09322978
申请日：1999-06-01
IPC分类号： G03F7023
CPC分类号： G03F7/0226 , G03F7/022
摘要： Disclosed are a positive photoresist composition including (A) an alkali-soluble resin, (B) a photosensitizer containing a quinonediazide ester of, e.g., bis[2,5-dimethyl-3-(2-hydroxy-5-methylbenzyl)-4-hydroxyphenyl]methane and (C) e.g., 2,6-bis(2,5-dimethyl-4-hydroxybenzyl)-4-methylphenol; and a process including the steps of coating the composition onto a 8 to 12-inch substrate, drying, exposing and developing the same. The composition which can form a pattern having a good shape whose dimensional changes are minimized in a wide range over surface of the substrate, particularly in processes using a large-diameter substrate, and the process for forming a resist pattern using the composition are provided.
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10.发明授权Positive photoresist compositions and multilayer resist materials using same 有权正光致抗蚀剂组合物和使用其的多层抗蚀剂材料公开(公告)号：US06187500B1
公开(公告)日：2001-02-13
申请号：US09432417
申请日：1999-11-02
申请人： Ken Miyagi , Kousuke Doi , Atsuko Hirata , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Ken Miyagi , Kousuke Doi , Atsuko Hirata , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F7023
CPC分类号： G03F7/0236 , C08G8/20 , C08G8/28 , C08L61/12 , C08L61/14
摘要： In a positive photoresist composition including (A) an alkali-soluble novolak resin and (B) a naphthoquinonediazide ester, the alkali-soluble novolak resin is obtained synthetically by condensation of phenol compounds and an aldehyde or ketone, and the phenol compounds include, for example, 1% to 20% by mole of hydroquinone, 30% to 95% by mole of m-cresol and 2% to 50% by mole of 2,5-xylenol. Thus, a high-definition positive photoresist composition can be obtained, which inhibits the formation of scum, and is satisfactory in sensitivity, sectional shape, focal depth range and other properties even in a process for the formation of an ultrafine resist pattern of 0.30 &mgr;m or below by lithography using i-ray.
摘要翻译： 在包含（A）碱溶性酚醛清漆树脂和（B）萘醌二叠氮化物酯的正性光致抗蚀剂组合物中，通过酚化合物和醛或酮的缩合合成获得碱溶性酚醛清漆树脂，并且酚化合物包括 例如，氢醌的1〜20摩尔％，间甲酚的30〜95摩尔％，2,5-二甲苯酚2〜50摩尔％。 因此，即使在形成0.30微米的超细抗蚀剂图案的工艺中，也可以获得抑制浮渣形成的高分辨正性光致抗蚀剂组合物，并且在灵敏度，截面形状，焦深范围和其它性能方面令人满意 以下使用i-ray进行平版印刷。
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