Semiconductor memory device
    2.
    发明授权
    Semiconductor memory device 失效
    半导体存储器件

    公开(公告)号:US4587638A

    公开(公告)日:1986-05-06

    申请号:US630115

    申请日:1984-07-12

    IPC分类号: G11C29/00 G11C7/02

    CPC分类号: G11C29/84 G11C29/832

    摘要: In the semiconductor memory device according to the present invention, when there is a defective portion in the memory cells, those memory cells are replaced by redundant memory cells. When defective portions are discovered in the memory cells, the fuse elements corresponding to the memory cells having the defective portions are cut off. Voltages of the select lines connected to the memory cells having the defective portions are held at an L level by the resistors. Due to this, the memory cells having the defective portions are not selected.

    摘要翻译: 在根据本发明的半导体存储器件中,当存储单元中存在缺陷部分时,这些存储单元被冗余存储单元替换。 当在存储单元中发现有缺陷的部分时,与具有缺陷部分的存储单元相对应的熔丝元件被切断。 连接到具有缺陷部分的存储单元的选择线的电压由电阻器保持在L电平。 因此,不选择具有缺陷部分的存储单元。

    Static memory utilizing transition detectors to reduce power consumption
    3.
    发明授权
    Static memory utilizing transition detectors to reduce power consumption 失效
    静态存储器利用转换检测器来降低功耗

    公开(公告)号:US4744063A

    公开(公告)日:1988-05-10

    申请号:US613614

    申请日:1984-05-24

    CPC分类号: G11C11/418 G11C8/18

    摘要: A static memory has an address transition detector, an input data transition detector and a pulse signal generator. When a detector detects that an input address or input data has changed, the pulse signal generator produces a pulse signal having a width longer than the shorter of the data-reading or data-writing cycle. This pulse signal controls the period of time during which a penetrating DC current flows between two power sources via some of the components of the memory.

    摘要翻译: 静态存储器具有地址转换检测器,输入数据转换检测器和脉冲信号发生器。 当检测器检测到输入地址或输入数据已经改变时,脉冲信号发生器产生具有比数据读取或数据写入周期更短的宽度的脉冲信号。 该脉冲信号控制穿透DC电流通过存储器的一些部件在两个电源之间流动的时间段。

    Memory device resistant to soft errors
    4.
    发明授权
    Memory device resistant to soft errors 失效
    存储器件抵抗软错误

    公开(公告)号:US4592026A

    公开(公告)日:1986-05-27

    申请号:US564683

    申请日:1983-12-23

    CPC分类号: G11C7/12

    摘要: In a memory device, a plurality of memory cells are connected to bit line pairs. A precharge circuit is controlled by a chip enable signal during a stand-by state and by an address transition detector signal during an active state, to charge the bit line pairs up to a given power source voltage.

    摘要翻译: 在存储器件中,多个存储器单元连接到位线对。 在待机状态期间,预充电电路由芯片使能信号和地址转换检测器信号在激活状态期间控制,以将位线对充电至给定的电源电压。

    Refresh control circuit of pseudo static random access memory and pseudo
static random access memory apparatus
    5.
    发明授权
    Refresh control circuit of pseudo static random access memory and pseudo static random access memory apparatus 失效
    伪静态随机存取存储器和伪静态随机存取存储装置的刷新控制电路

    公开(公告)号:US5206830A

    公开(公告)日:1993-04-27

    申请号:US733126

    申请日:1991-07-19

    CPC分类号: G11C11/40615 G11C11/406

    摘要: A refresh control circuit for a pseudo static random access memory includes a refresh control signal output circuit for outputting a refresh control signal to accomplish refresh control of the pseudo static random access memory, and includes a delay circuit. A first chip enable signal from a control device such as a MPU is delayed by the delay circuit and outputted as a second chip enable signal for the PSRAM. As the first chip enable signal level changes from a selection level to a non-selection level, the refresh control signal level changes to a non-refresh level. This state is maintained for a predetermined period. After the second chip enable signal changes from the selection level to the non-selection level, the refresh control signal returns from the non-refresh level to the refresh level. Thus, the PSRAM enters into the refresh state during the non-selection state, and is refreshed. This refresh operation is necessarily performed after an access to PSRAM.

    摘要翻译: 用于伪静态随机存取存储器的刷新控制电路包括刷新控制信号输出电路,用于输出刷新控制信号以完成伪静态随机存取存储器的刷新控制,并且包括延迟电路。 来自诸如MPU的控制装置的第一芯片使能信号被延迟电路延迟并作为PSRAM的第二芯片使能信号输出。 当第一芯片使能信号电平从选择电平变化到非选择电平时,刷新控制信号电平变为非刷新电平。 该状态保持预定的时间。 在第二芯片使能信号从选择电平变化到非选择电平之后,刷新控制信号从非刷新电平返回到刷新电平。 因此,PSRAM在非选择状态期间进入刷新状态,并被刷新。 这种刷新操作必须在访问PSRAM之后执行。

    Semiconductor memory
    6.
    发明授权

    公开(公告)号:US5027327A

    公开(公告)日:1991-06-25

    申请号:US339661

    申请日:1989-04-18

    CPC分类号: G11C11/406

    摘要: A semiconductor memory having dynamic memory cells includes a determining circuit for determining whether or not it is necessary to refresh the dynamic memory cells, and only when it is necessary, outputting a refresh execution signal in response to a refresh request signal from an external circuit, and a circuit for executing a refresh operation in response to the refresh execution signal. Even if the refresh request signal is supplied, a refresh operation is not executed unless the determining circuit determines that the refresh operation is necessary, thus dispensing with unnecessary refresh operations. Preferably, the determining circuit includes a timer which outputs a signal at every predetermined period. Only when the signal is output from the timer, is the refresh request signal from an external circuit accepted and the refresh execution signal output.

    Refresh control circuit of pseudo static random access memory and pseudo
static random access memory apparatus
    7.
    发明授权
    Refresh control circuit of pseudo static random access memory and pseudo static random access memory apparatus 失效
    伪静态随机存取存储器和伪静态随机存取存储装置的刷新控制电路

    公开(公告)号:US5075886A

    公开(公告)日:1991-12-24

    申请号:US375856

    申请日:1989-07-06

    CPC分类号: G11C11/40615 G11C11/406

    摘要: A refresh control circuit for a pseudo static random access memory includes a refresh control signal output circuit for outputting a refresh control signal to accomplish refresh control of the pseudo static random access memory, and includes a delay circuit. A first chip enable signal from a control device such as a MPU is delayed by the delay circuit and outputted as a second chip enable signal for the PSRAM. As the first chip enable signal level changes from a selection level to a non-selection level, the refresh control signal level also changes to a non-refresh level. This state is maintained for a predetermined period. After the second chip enable signal changes from the selection level to the non-selection level, the refresh control signal returns from the non-refresh level to the refresh level. Thus, the PSRAM enters into the refresh state during the non-selection state, and is refreshed. This refresh operation is necessarily performed after an access to PSRAM.

    摘要翻译: 用于伪静态随机存取存储器的刷新控制电路包括刷新控制信号输出电路,用于输出刷新控制信号以完成伪静态随机存取存储器的刷新控制,并且包括延迟电路。 来自诸如MPU的控制装置的第一芯片使能信号被延迟电路延迟并作为PSRAM的第二芯片使能信号输出。 当第一芯片使能信号电平从选择电平变化到非选择电平时,刷新控制信号电平也变为非刷新电平。 该状态保持预定的时间。 在第二芯片使能信号从选择电平变化到非选择电平之后,刷新控制信号从非刷新电平返回到刷新电平。 因此,PSRAM在非选择状态期间进入刷新状态,并被刷新。 这种刷新操作必须在访问PSRAM之后执行。

    Cathode ray tube control apparatus
    8.
    发明授权
    Cathode ray tube control apparatus 失效
    阴极射线管控制装置

    公开(公告)号:US5414330A

    公开(公告)日:1995-05-09

    申请号:US20567

    申请日:1993-02-22

    摘要: A cathode ray tube control apparatus includes phosphor display screen, three electron guns for emitting R, G, B electron beams to the display screen, a shadow mask placed between the electron guns and the display screen, and index phosphors deposited on the shadow mask and having at least two line elements diagonal to a horizontal scanning direction of the electron beam for generating a signal according to the electron beam scan. Further provided are detector for detecting beam crossing points over the index phosphor, and correction circuit for correcting the deflection of the electron beam based on the detected beam crossing points.

    摘要翻译: 阴极射线管控制装置包括荧光显示屏,用于向显示屏发射R,G,B电子束的三个电子枪,放置在电子枪和显示屏之间的荫罩,以及沉积在荫罩上的折射荧光体, 具有与电子束的水平扫描方向对角的至少两个线元件,用于根据电子束扫描产生信号。 还提供了用于检测指示荧光体上的光束交叉点的检测器,以及用于基于检测到的光束交叉点校正电子束的偏转的校正电路。

    Automatic gain control device
    10.
    发明授权
    Automatic gain control device 失效
    自动增益控制装置

    公开(公告)号:US4963969A

    公开(公告)日:1990-10-16

    申请号:US314087

    申请日:1989-02-23

    IPC分类号: H04N5/04 H04N5/52 H04N7/015

    CPC分类号: H04N5/52

    摘要: Disclosed is an automatic gain control device which comprises: a first amplitude detection circuit for detecting an average amplitude value of a television video signal, a peak amplitude value of the same television video signal, or a value obtained by mixing the average amplitude value and the peak amplitude value with a predetermined mixing ratio; a second amplitude detection circuit for detecting an amplitude value of a vertical or horizontal synchronizing signal in the television video signal; an amplitude control circuit for controlling an amplitude of an input television video signal; a synchronization circuit for detecting a vertical synchronizing signal and a horizontal synchronizing signal in the television video signal so as to generate various pulses including a clock pulse synchronized with the input television video signal by controlling an oscillation frequency of an oscillation circuit; and a synchronization phase lock detection circuit for detecting whether the synchronization circuit has been pulled into synchronism with the input television video signal, so that the amplitude control circuit is controlled by an output of the second amplitude detection circuit when synchronization phase-lock is established while controlled by an output of the first amplitude detection circuit when the synchronization phase-lock comes out.

    摘要翻译: 公开了一种自动增益控制装置,包括:第一幅度检测电路,用于检测电视视频信号的平均振幅值,相同电视视频信号的峰值振幅值,或通过混合平均振幅值和 具有预定混合比的峰值振幅值; 第二振幅检测电路,用于检测电视视频信号中的垂直或水平同步信号的振幅值; 幅度控制电路,用于控制输入电视视频信号的幅度; 用于检测电视视频信号中的垂直同步信号和水平同步信号的同步电路,以通过控制振荡电路的振荡频率产生包括与输入电视视频信号同步的时钟脉冲的各种脉冲; 以及同步锁相检测电路,用于检测同步电路是否已被拉入与输入的电视视频信号同步,使得当建立同步锁相时,幅度控制电路由第二幅度检测电路的输出控制,而 当同步锁相出来时由第一幅度检测电路的输出控制。