Method and apparatus for manufacturing photonic crystal element
    2.
    发明授权
    Method and apparatus for manufacturing photonic crystal element 失效
    制造光子晶体元件的方法和装置

    公开(公告)号:US06685870B2

    公开(公告)日:2004-02-03

    申请号:US09796663

    申请日:2001-02-28

    IPC分类号: B29C4310

    CPC分类号: G02B6/1225 B82Y20/00

    摘要: Fine particles (23) are oriented and dispersed in a polymer medium to obtain a composite material (24), which is high-density compression molded to such a size that a photonic band gap develops, thereby obtaining a photonic crystal element (26). The orientation of the fine particles (23) in the polymer medium can be carried out on a scale (tens of micrometers to several millimeters) where required manipulations can be done with ease.

    摘要翻译: 精细颗粒(23)被定向并分散在聚合物介质中,以获得高密度压缩成型到使光子带隙形成的尺寸的复合材料(24),从而获得光子晶体元件(26)。 聚合物介质中的细颗粒(23)的取向可以以可以容易地进行所需操作的规模(几十微米至几毫米)进行。

    Optical waveguide device and method of manufacturing the same

    公开(公告)号:US06647184B2

    公开(公告)日:2003-11-11

    申请号:US10053020

    申请日:2002-01-18

    IPC分类号: G02B626

    摘要: There are provided an optical waveguide device in which a plurality of PLC type optical waveguide chips are optically coupled to one another at high accuracy by passive alignment, and a method of manufacturing the device. A plurality of optical waveguide chips are formed by cutting an optical waveguide device comprising an optical waveguide substrate having an optical waveguide of a predetermined pattern formed thereon and guide grooves formed on both sides of the optical waveguide on the optical waveguide substrate in the longitudinal direction thereof, in the direction of traversing the optical waveguide substrate at substantially right angle thereto and passing through an intersection of the optical waveguide. After a dielectric multilayer film filter is provided on an end surface of at least one of the optical waveguide chips, on which the intersection of the optical waveguide is exposing, guide pins are fitted in the guide grooves of each of the plurality of optical waveguide chips in the state that the filter is put between adjoining two chips, thereby to align the chips with one another. In such aligned state, the chips are brought into contact with one another through the filter and are fixed.

    Optical hybrid integrated device and method of making the same
    4.
    发明授权
    Optical hybrid integrated device and method of making the same 有权
    光混合集成器件及其制作方法

    公开(公告)号:US06324314B1

    公开(公告)日:2001-11-27

    申请号:US09401327

    申请日:1999-09-23

    IPC分类号: G02B612

    摘要: The surface area of a rectangular semiconductor substrate (10), which is used a reference plane, is composed of three regions arranged side by side in its lengthwise direction. A first one of the regions has a concavity (13) formed leaving opposite marginal portions of the region as banks (14a,14b), aid solder-coated pads (17) and alignment marks (18) are formed by metal thin films on the top surfaces of the banks. In a second region an electrode (16) is formed adjacent the first region and a semiconductor optical element (PD4) is mounted on the electrode with an active layer (31) of the former facing downward. An under-clad layer (211), acore (22), a height adjustment layer (26) and an over-clad layer (212), which constitute an optical waveguide, are formed over the surface of a second substrate, and the over-clad layer overlying both marginal portions of the second substrate is removed to expose the height adjustment layer to form terraces (20a, 20b) corresponding to the banks. Solder-coated pads (23) and alignment marks (24) are formed by metal films on the terraces, and the solder-coated pads (17) and (23) are soldered to each other with the banks and the terraces positioned using the alignment marks (18) and (24). The thickness of the height adjustment layer (26) is predetermined so that the core and the semiconductor active layer (31) lie at the same vertical position relative to the reference plane.

    摘要翻译: 使用参考平面的矩形半导体衬底(10)的表面积由在其长度方向上并排布置的三个区域组成。 所述区域中的第一个具有形成为具有作为堤(14a,14b)的所述区域的相对边缘部分的凹陷(13),辅助焊料涂覆的焊盘(17)和对准标记(18)由金属薄膜 银行的顶部表面。 在第二区域中,邻近第一区域形成电极(16),并且半导体光学元件(PD4)安装在电极上,其中前者的有源层(31)面向下。 在第二基板的表面上形成构成光波导的下包层(211),孔(22),高度调节层(26)和外覆层(212) 去除覆盖第二基板的两个边缘部分的单层,以暴露高度调节层以形成对应于堤的梯形区(20a,20b)。 焊接涂层焊盘(23)和对准标记(24)由台阶上的金属膜形成,并且焊料涂覆的焊盘(17)和(23)彼此焊接,堤和梯田使用对准 标记(18)和(24)。 高度调节层(26)的厚度是预定的,使得芯和半导体有源层(31)相对于参考平面位于相同的垂直位置。