摘要:
A hybrid sensor which is comprised of an acceleration sensor for detecting acceleration based on a temperature distribution of a predetermined gas hermetically enclosed within a fluid-tight space, and an angular velocity sensor for detecting angular velocity based on a deviation of a flow of a predetermined gas. The acceleration sensor and the angular velocity sensor are formed in one piece by the use of semiconductor processing technology in such a manner that the acceleration sensor and the angular velocity sensor are formed on a plurality of semiconductor substrates, and then the plurality of semiconductor substrates are superposed one upon another and united into a laminate.
摘要:
A very small and economical acceleration sensor which can detect acting acceleration with high sensitivity and high accuracy by precisely processing a semiconductor substrate and the like by using the photoengraving technique in a semiconductor manufacturing process to accurately form the elements themselves such as a sensor case, a cavity, a heater, a temperature-sensing resistor element, and a heat-type temperature-sensing resistor element, and the relative placement of each element. One embodiment of the acceleration sensor can detect acceleration acting from any of the three-dimensional directions.
摘要:
A very small and economical acceleration sensor which can detect acting acceleration with high sensitivity and high accuracy by precisely processing a semiconductor substrate and the like by using the photoengraving technique in a semiconductor manufacturing process to accurately form the elements themselves such as a sensor case, a cavity, a heater, a temperature-sensing resistor element, and a heat-type temperature-sensing resistor element, and the relative placement of each element. One embodiment of the acceleration sensor can detect acceleration acting from any of the three-dimensional directions.
摘要:
A gas flow type angular velocity sensor which is capable of reliably sensing an angular velocity while accurately controlling the working gas flow with temperature compensation by using a pair of heat wires as a gas flow sensor without providing any additional gas flow sensor in the sensor body wherein an angular velocity sensing bridge circuit is provided at its current supply source with a temperature compensating circuit connected in series which temperature compensating circuit is composed of a pair of series or parallel connected resistance elements, one of which is a thermosensitive resistance element disposed in a gas path and the other of which is a reference resistance element disposed outside the gas path.
摘要:
A gas flow type angular velocity sensor comprising two semiconductor substrates wherein only the first semiconductor substrate is provided with a groove etched thereon constituting the gas path and the second semiconductor substrate is provided with paired heat wires formed thereon. The two semiconductor substrates are coupled and bonded to each other to form the sensor body.
摘要:
This invention relates to a semiconductor sensor for detecting external physical forces, such as acceleration, contact pressures, air pressures, mechanical vibrations, etc. The semiconductor sensor according to this invention is characterized by the use of compound semiconductors of high piezoelectricity, such as GaAs, etc. Conventionally sensors of the cantilever type, diaphragm type, etc. are made of silicon. These prior art sensors have low detection sensitivity, and their characteristics tend to deteriorate. The sensor according to this invention is made of GaAs, which has high piezoelectricity and can retain good characteristics of the semiconductor even at high temperatures and includes a field-effect transistor formed on the GaAs for sensing a stress. The FET is driven by a constant current or a constant voltage so as to detect a change of an electrical characteristic (e.g., threshold characteristic) due to a stress. The structure of the sensor according to this invention enables the sizes of the sensors not only to be diminished but also to reduce the fabrication costs. When a stress is applied to the FET, the transconductance changes, and the temperature changes, consequently the I-V characteristic changes. An a.c. signal biased by a direct current is supplied to the gate of the FET, and a drain current is detected in an a.c. component and a d.c. component so as to detect a temperature concurrently with a detection of a stress.
摘要:
For forming an annular magnetostrictive coat on an outer peripheral surface of a rotational shaft associated with a magnetostrictive torque sensor, a magnetostrictive-coat forming method comprises a step of fitting a cylindrical masking jig over the outer peripheral surface of the rotational shaft and securing the masking jig to the outer peripheral surface, a step of placing the rotational shaft in a plating tank to thereby form the magnetostrictive coat by plating on the outer peripheral surface, and a step of detaching the masking jig from the rotational shaft.
摘要:
A method for manufacturing a magnetostrictive torque sensor compriseis the steps of forming magnetostrictive films on a rotating shaft of a magneto-strictive torque sensor, creating magnetic anisotropy in the magnetostrictive films formed in the magnetostrictive film formation step, and demagnetizing the rotating shaft. The demagnetization step is provided in any of the stages after the magnetostrictive film formation step, and comprises initializing the remanent magnetism created in the rotating shaft.
摘要:
For forming an annular magnetostrictive coat on an outer peripheral surface of a rotational shaft associated with a magnetostrictive torque sensor, a magnetostrictive coat forming method comprises a step of fitting a cylindrical masking jig over the outer peripheral surface of the rotational shaft and securing the masking jig to the outer peripheral surface, a step of placing the rotational shaft in a plating tank to thereby form the magnetostrictive coat by plating on the outer peripheral surface, and a step of detaching the masking jig from the rotational shaft.
摘要:
A magnetostrictive torque sensor comprising a first magnetostrictive film, a second magnetostrictive film, and a third magnetostrictive film formed over the entire circumferential periphery of a surface of a rotating shaft. A first sensor coil, a second sensor coil, and a third sensor coil for sensing changes in impedance are provided for the first, second, and third magnetostrictive films, respectively. Signals according to the changes in impedance outputted from the first through third sensor coils are inputted to a torque calculating unit. The torque calculating unit calculates the torque applied to the rotating shaft on the basis of the output signal from the first sensor coil and the output signal from the second sensor coil. Furthermore, the output signals from the first through third sensor coils are compared, and failures in the first magnetostrictive film or the second magnetostrictive film are detected by a failure detector.